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Chinese Physics B 2006年第4期15卷 813-817页

作者：丁毅刘国汉陈光华贺德衍朱秀红张文理田凌马占杰 School of Physical Science and Technology Lanzhou University Lanzhou 730000 China The Key Laboratory of Advanced Functional Materials Ministry of Education of China Beijing University of Technology Beijing 100022 China

The method of numerical simulation is used to fit the relationship between the photoconductivity in films and the illumination time. The generation and process rule of kinds of different charged defect states during illumination are revealed. It is found surprisingly that the initial photoconductivity determines directly the total account of photoconductivity degradation of sample.

关键词： hydrogenated amorphous silicon Staebler-Wronski effect microwave electron cyclotronresonant chemical vapour deposition charged defects

Nanomorph silicon Thin Films Prepared by Using an HW-MWECR CVD System

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Chinese Physics Letters 2005年第5期22卷 1260-1263页

作者：胡跃辉陈光华周键儿荣延栋李瀛宋雪梅张文理丁毅高卓马占杰周杯恩朱秀红 DepartmentofMaterialsScienceandEngineering BeijingUniversityofTechnologyBeijing100022//InstituteofJingdezhdenCeramicJingdezhen333001 DepartmentofMaterialsScienceandEngineering BeijingUniversityofTechnologyBeijing100022 InstituteofJingdezhenCeramic Jingdezhen333001

We have prepared hydrogenated nano-amorph silicon (na-Si: H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2)=20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508cm ^{-1}. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si: H films rather than nc-Si possess high photosensitivity of about 105.

关键词： hydrogenated amorphous-silicon PLASMA hydrogenated amorphous silicon silanes Volume fraction Plasmas Films

Modified Photoluminescence by silicon-Based One-Dimensional Photonic Crystal Microcavities

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Chinese Physics Letters 2005年第1期22卷 230-232页

作者：陈三钱波魏俊伟陈坤基徐骏李伟黄信凡 NationalLaboratoryofSolidStateMicrostructuresandDepartmentofPhysics NanjingUniversityNanjing210093

Photoluminescence (PL) from one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavities are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNz:H) thin film. By comparison, the wide emission band width 208 nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the lambda/2-thick layer of a-SiNz:H. A linewidth of Deltalambda = 11 nm and a quality factor of Q = 69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.

关键词： EMISSION Band gap emission TRANSMISSION SPECTROSCOPY hydrogenated amorphous silicon Plasma enhanced chemical vapor deposition PNLIP gene Quality factor pickling line microcavities crystals CSH1 gene photonic

Light induced microstructure transformation in a-Si：H films

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Chinese Physics B 2007年第4期16卷 1125-1128页

作者：刘国汉丁毅张文理陈光华贺德衍邓金祥 School of Physical Science and Technology Lanzhou University Lanzhou 730000 China Institute of Sensor Technology Gansu Academy of Sciences Lanzhou 730000 China The Key Laboratory of Advanced Functional Materials Ministry of Education of China Beijing University of Technology Beijing 100022 China

A series of a-Si：H films are deposited by hot wire assisted microwave electron cyclotron resonant chemical vapour deposition （HW-MWECR-CVD）, subsequently exposed under simulated illumination for three hours. This paper studies the microstructure change during illumination by Fourier Transformation Infrared （FTIR） spectra. There are two typical transformation tendencies of microstructure after illumination. It proposes a model of light induced structural change based on the experimental results. It is found that all samples follow the same mechanism during illumination, and intrinsic structure of samples affect the total H content.

关键词： hydrogenated amorphous silicon Staebler-Wronski effect microwave electron cyclotron resonant chemical vapour deposition