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highly ordered inkjet-printed quantum-dot thin films enable efficient and stable QLEDs with EQE exceeding 23%

eScience 2024年第3期4卷 152-162页

作者： Changting Wei Bo Xu Meng Zhang Zhenhuang Su Jiawei Gu Wenrui Guo Xingyu Gao Wenming Su Zheng Cui Seokwoo Jeon Zhiyong Fan Haibo Zeng MIIT Key Laboratory of Advanced Display Materials and Devices Institute of Optoelectronics&NanomaterialsSchool of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China Ningbo Nato New Material Technology Co. LtdNingbo 315600China Shanghai Synchrotron Radiation Facility(SSRF) Zhangjiang LaboratoryShanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China School of Mechanical Engineering Jiangsu UniversityZhenjiang 212013China Printable Electronics Research Center Nano Devices and Materials DivisionSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China Department of Materials Science and Engineering Korea UniversitySeoul 02841South Korea Department of Electronic and Computer Engineering The Hong Kong University of Science and TechnologyHong Kong 999077China

Inkjet-printed quantum dot light-emitting diodes(QLEDs)are emerging as a promising technology for next-generation ***,the progress in fabricating QLEDs using inkjet printing technique has been slower compared to spin-coated devices,particularly in terms of efficiency and *** key to achieving high performance QLEDs lies in creating a highly ordered and uniform inkjet-printed quantum dot(QD)thin *** this study,we present a highly effective strategy to significantly improve the quality of inkjet-printed CdZnSe/CdZnS/ZnS QD thin films through a pressure-assisted thermal annealing(PTA)*** from this PTA process,a high quality QD thin film with ordered packing,low surface roughness,high photoluminescence and excellent electrical property is *** mechanism behind the PTA process and its profound impact on device performance have been thoroughly investigated and ***,a record high external quantum efficiency(EQE)of 23.08%with an impressive operational lifetime(T50)of up to 343,342h@100cdm−2,and a record EQE of 22.43%with T50 exceeding to 1,500,463h@100cdm−2 are achieved in inkjet-printed red and green CdZnSe-based QLEDs,*** work highlights the PTA process as an important approach to realize highly efficient and stable inkjet-printed QLEDs,thus advancing QLED technology to practical applications.

关键词： Inkjet printing Quantum dot light-emitting diode High efficiency Thermal annealing highly ordered

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