检索结果-南通市图书馆

Inelastic electron tunneling spectroscopy (IETS) study of high-k gate dielectrics

Science China(Information Sciences) 2011年第5期54卷 980-989页

作者： MA T. P. Department of Electrical Engineering Yale University New Haven CT 06520 USA

This paper provides a review of the inelastic electron tunneling spectroscopy (IETS), a powerful technique for characterizing both the structural and electrical properties of ultra-thin gate dielectrics in MOS devices. The principle of operation of IETS will be described, and examples will be shown to illustrate the wealth of information that can be revealed by IETS, including phonons, bonding vibration modes, impurity bonds, and traps, which is diffcult to accurately characterize on the same sample by other techniques.

关键词： high-k gate dielectrics electron tunneling inelastic interactions phonons vibration modes impurities traps

来源：

同方期刊数据库评论

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Challenges in Atomic-Scale Characterization of high-k dielectrics and Metal gate Electrodes for Advanced CMOS gate Stacks

引用

Journal of Materials Science & Technology 2009年第3期25卷 289-313页

作者： Xinhua Zhu Jian-min Zhu Aidong Li Zhiguo Liu Naiben Ming National Laboratory of Solid State Microstructures Department of Physics Nanjing University Nanjing 210093 China

The decreasing feature sizes in complementary metal-oxide semiconductor （CMOS） transistor technology will require the replacement of SiO2 with gate dielectrics that have a high dielectric constant （high-k） because as the SiO2 gate thickness is reduced below 1.4 nm, electron tunnelling effects and high leakage currents occur in SiO2, which present serious obstacles to future device reliability. In recent years significant progress has been made on the screening and selection of high-k gate dielectrics, understanding their physical properties, and their integration into CMOS technology. Now the family of hafnium oxide-based materials has emerged as the leading candidate for high-k gate dielectrics due to their excellent physical properties. It is also realized that the high-k oxides must be implemented in conjunction with metal gate electrodes to get sufficient potential for CMOS continue scaling. In the advanced nanoscale Si-based CMOS devices, the composition and thickness of interfacial layers in the gate stacks determine the critical performance of devices. Therefore, detailed atomic- scale understandings of the microstructures and interfacial structures built in the advanced CMOS gate stacks, are highly required. In this paper, several high-resolution electron, ion, and photon-based techniques currently used to characterize the high-k gate dielectrics and interfaces at atomic-scale, are reviewed. Particularly, we critically review the research progress on the characterization of interface behavior and structural evolution in the high-k gate dielectrics by high-resolution transmission electron microscopy （HRTEM） and the related techniques based on scanning transmission electron microscopy （STEM）, including high-angle annular dark- field （HAADF） imaging （also known as Z-contrast imaging）, electron energy-loss spectroscopy （EELS）, and energy dispersive X-ray spectroscopy （EDS）, due to that HRTEM and STEM have become essential metrology tools for characterizing the d

关键词： high-k gate dielectrics Metal gate electrodes, CMOS gate stack HRTEM STEM

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Fermi level unpinning achievement and transport modification in Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb laminated stacks by doping engineering

引用

Journal of Materials Science & Technology 2022年第26期121卷 130-139页

作者： Lin Hao Gang He Shanshan Jiang Zhenxiang Dai Ganhong Zheng Jinyu Lu Lesheng Qiao Jingbiao Cui School of Materials Science and Engineering Anhui UniversityHefei230601China School of Integration Circuits Anhui UniversityHefei230601China School of Physics and Optoelectronics Engineering Anhui UniversityHefei230601China Department of Physics University of North TexasDentonTX76203USA

Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high *** passivation and doping engineering technology have become the main driving force to solve the ***,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A *** energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level *** transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been *** analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices.

关键词： Fermi level pinning high-k gate dielectrics Field effect transistor Electrical transport mechanism Doping

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature

Modification of optical and electrical properties of sol-gel...

引用

安徽省第四届（2016年）“卓凌杯”真空科技青年创新大赛暨学术研讨会

作者： D.Q.Xiao G.He J.Gao J.G.Lv Z.Q.Sun School of physics and Materials Science Radiation Detection Materials & Devices Lab Anhui University School of Sciences Anhui University of Science and Technology Department of Physics and Electronic Engineering Hefei Normal University

In this letter, annealing temperature dependence on the structure, band gap energy and electrical properties of TiO doped ZrO gate dielectrics deposited by sol-gel method at low temperature were systemically investigated. The crystalline temperature of TiO doped ZrO is up to 600 o C. The transmittance and band gap value of the ZrTiO film were about 75% and 4.0 e V,respectively. 300 o C-annealed ZrTiO MOS capacitor with high dielectric constant of 34.9, a small hysteresis value of 0.004 and low leakage current density of 2.7×10 A/cm were obtained. The dominant conduction mechanisms of Al/ZrTiO/n-Si MOS structures were schottky emission and ohmic conduction in the low electric field and direct tunneling in the high electric field. As a result,it can be concluded that sol-gel derived ZrTiO gate dielectric displays potential application as is a promising candidate in future MOS electronic devices.

关键词： high-k gate dielectrics Optical constant Electrical properties Ti incorporation Sol-gel Conduction mechanisms

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

high-Performance,highly Reliable HfSiON gate Dielectric for Low Vth System LSI's

High-Performance,Highly Reliable HfSiON Gate Dielectric for ...

引用

2006 8th International Conference on Solid-State and Integrated Circuit Technology

作者： J.Yugami M.Inoue S.Tsujikawa M.Mizutani k.Nomura T.Hayashi Y.Nishida k.Shiga J.Tsuchimoto Y.Ohno M.Yoneda Process Technology Development Div. RENESAS Technology Corp

ISBN: (纸本)1424401607

In this paper,we demonstrate the improvement of HfSiON pFET characteristics with F incorporation technique,which might be a powerful tool to lower V in pFET with both poly-Si and PC-FUSI *** F implantation in channel region prior to HfSiON formation V lowering up to～200mV is obtained without mobility ***,impact of F incorporation in HfSiON is investigated from reliability aspect.V stability during negative bias temperature stress is drastically improved which can be associated with F passivation of defects in HfSiON.

关键词： Reliability engineering Power engineering and energy high-k gate dielectrics high k dielectric materials Plasma temperature Fabrication FETs Doping Plasma displays Hydrogen

来源： cnki会议评论

在线全文

cnki会议

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：