检索结果-南通市图书馆

Analysis and Characterization of Normally-Off Gallium Nitride high electron mobility Transistors

Computers, Materials & Continua 2021年第10期69卷 1021-1037页

作者： Shahzaib Anwar Sardar Muhammad Gulfam Bilal Muhammad Syed Junaid Nawaz Khursheed Aurangzeb Mohammad Kaleem Department of Electrical and Computer Engineering COMSATS University Islamabad(CUI)Islamabad45550Pakistan CTIF Global Capsule Department of Business Development and TechnologyAarhus University7400HerningDenmark Computer Engineering Department College of Computer and Information SciencesKing Saud UniversityRiyadh11543Saudi Arabia

high electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT.The impact of variations in gate length,mole concentration,barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated.An increase in the gate length causes a decrease in the drain current and transconductance,while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium(Al).For Al mole fractions of 23%,25%,and 27%,within Al gallium nitride(AlGaN)barrier,the GaN HEMT devices provide a maximum drain current of 347,408 and 474 mA/μm and a transconductance of 19,20.2,21.5 mS/μm,respectively.Whereas,for Al mole fraction of 10%and 15%,within AlGaN buffer,these devices are observed to provide a drain current of 329 and 283 mA/μm,respectively.Furthermore,for a gate length of 2.4,3.4,and 4.4μm,the device is observed to exhibit a maximum drain current of 272,235,and 221 mA/μm and the transconductance of 16.2,14,and 12.3 mS/μm,respectively.It is established that a maximum drain current of 997 mA/μm can be achieved with an Al concentration of 23%,and the device exhibits a steady drain current with enhanced transconductance.These observations demonstrate tremendous potential for two-dimensional electron gas(2DEG)for securing of the normally-off mode operation.A suitable setting of gate length and other design parameters is critical in preserving the normally-off mode operation while also enhancing the critical performance parameters at the same time.Due to the normallyon depletion-mode nature of GaN HEMT,it is usually not considered as suitable for high power levels,frequencies,and temperature.In such settings,a negative bias is required to enter the blocking condition;however,in the before-mentioned normally-off

关键词： high electron mobility GaN HEMT bipolar transistors gallium nitride heterojunctions MOS devices

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Aqueous-processable,naphthalene diimide-based polymers for eco-friendly fabrication of high-performance,n-type organic electrolyte-gated transistors

引用

Science China Chemistry 2022年第5期65卷 973-978页

作者： Dahyun Jeong Min Je Kim Seungjin Lee Jin-Woo Lee Youngwoong Kim Hyeong Jun Kim Jeong Ho Cho Bumjoon J.Kim Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology(KAIST)Daejeon 34141Republic of Korea Department of Chemical and Biomolecular Engineering Yonsei UniversitySeoul 03722Republic of Korea Department of Chemical and Biomolecular Engineering Sogang UniversitySeoul 04107Republic of Korea

Organic electrolyte-gated transistors(OEGTs) have the benefits of low power consumption and large current modulation.Nevertheless,the electrical performance of n-type OEGTs lags far behind that of p-type OEGTs.In this study,we design a series of polymers,P(NDITEG-T) and P(NDIMTEG-T),comprising a naphthalene diimide backbone for n-type charge transport and oligo(ethylene glycol)(OEG) side chains for high ionic conductivity and eco-friendly solution processing.The incorporation of the OEG chain facilitates the electrochemical doping of the semiconductor by ions to realize high-performance,n-type OEGTs.Notably,in OEGTs,P(NDITEG-T) achieves a high electron mobility of 1.0 × 10^(-1) cm^(2) V^(-1) s^(-1),which represents the highest value reported for solution-processed,n-type OEGTs.It is noted that the fabrication of the OEGTs is achieved by solution processing with eco-friendly ethanol/water mixtures in virtue of the hydrophilic OEG chains.This work demonstrates the molecular design of the P(NDITEG-T) polymer and its significant ability to produce aqueous-processable,high-performance,and n-type OEGTs.

关键词： organic electrolyte-gated transistors n-type transistors oligo(ethylene glycol)polymers eco-friendly solution process high electron mobility

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films

引用

Journal of Materiomics 2022年第1期8卷 123-135页

作者： Dung Van Hoang Nam Hoang Vu Nga Thi Do Anh Tuan Thanh Pham Truong Huu Nguyen Jer-Lai Kuo Thang Bach Phan Vinh Cao Tran Laboratory of Advanced Materials University of ScienceHoChiMinh City700000Viet Nam Vietnam National University HoChiMinh City700000Viet Nam HoChiMinh City Institute of Physics HoChiMinh City700000Viet Nam Institute of Atomic and Molecular Sciences Academia SinicaTaipei10617Taiwan Center for Innovative Materials and Architectures(INOMAR) HoChiMinh City700000Viet Nam Faculty of Materials Science&Technology University of ScienceHoChiMinh City700000Viet Nam

This paper distinguished hydrogen roles to improve electron mobility and carrier concentration in ZnO and Al doped ZnO sputtered films.By combining experimental evidences and theoretical results,we find out that hydrogen located at oxygen vacancy sites(H_(O))is the main factor gives rise to increase simultaneously mobility and carrier concentration which has not been mentioned before.Introducing appropriate hydrogen content during sputtering not only results in crystalline relaxation but also supports doping Al into ZnO,increasing carrier concentration and electron mobility in the film.First principles calculations confirmed hydrogen substitutional stability for oxygen vacancy,significantly reducing electron conductivity effective mass and hence increasing electron mobility.In particular,0.8%hydrogen partial pressure ratio achieved 61 cm^(2)V^(-1)s^(-1)maximum electron mobility,optical transmittance above 82%in visible and near-infrared regions,and 2×10^(20) cm^(-3)carrier concentrations for H-Al co-doped ZnO film.These values approach ideal electrical and optical properties for transparent conducting oxide films.The presence of one maximum electron mobility was attributed to competition between increasing mobility due to restoring effective electron mass and hydrogen passivation of native defects,and decreased electron mobility due to electron-phonon scattering.

关键词： high electron mobility Hydrogen roles Passivation effects Effective electron mass DFT calculations Doped ZnO thin Film

来源：

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：