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检索条件"主题词=Growth of AlGaN-based material"
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Review on the Progress of algan-based Ultraviolet Light-Emitting Diodes
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Fundamental Research 2021年 第6期1卷 717-734页
作者: Yuxuan Chen Jianwei Ben Fujun Xu Jinchai Li Yang Chen Xiaojuan Sun Dabing Li State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and PhysicsChinese Academy of SciencesChangchun 130033China Center of materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsPeking UniversityBeijing 100871China Fujian Key Laboratory of Semiconductor materials and Applications CI Center for OSEDCollege of Physical Science and TechnologyXiamen UniversityXiamen 361005China
algan-based materials have exhibited considerable potential for fabricating ultraviolet(UV)light-emitting diodes(LEDs)owing to their direct,wide,and adjustable energy bandgap.algan-based devices have extensive appli-c... 详细信息
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