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The impact of germanium in strained Si/relaxed Si_(1-x)Ge_x on carrier performance in non-degenerate and degenerate regimes

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Journal of Semiconductors 2013年第6期34卷 1-4页

作者： EngSiew Kang S Anwar M T Ahmadi Razali Ismail Faculty of Electrical Engineering Universiti Teknologi Malaysia 81300 SkudaiJohor Malaysia Pennsylvania State University Altoona CollegePennsylvania16601USA

The impact of the fraction of germanium on the carrier performance of two-dimensional strained silicon, which embraces both the non-degenerate and degenerate regimes,is developed.In this model,the Fermi integral of order zero is employed.The impact of the fraction of germanium on the relaxed Si_（1-x）Ge_x substrate（x）,carrier concentration and temperature is reported.It is revealed that the effect of x on the hole concentration is dominant for a normalized Fermi energy of more than three,or in other words the non-degenerate regime.On the contrary, the x gradient has less influence in the degenerate regime.Furthermore,by increasing x there is an increase in the intrinsic velocity,particularly with high carrier concentration and temperature.

关键词： germanium intrinsic velocity SiGe hole concentration two dimensional

ICP-AES Determination of germanium in GdSiGe Series Alloys as Magnetic Refrigeration Material

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Journal of Rare Earths 2007年第3期25卷 377-380页

作者：刘鹏宇李娜劭荣珍刘冰伍星 National Center of Analysis and Testing for Nonferrous Metals and Electronic Materials General Research Institute for Nonferrous Metals

The ICP-AES method for the determination of Ge in GdSiGe series alloys was studied.As the three main elements in the alloys,Gd,Si,and Ge differ greatly from each other in chemical properties,it was difficult to pretreat the sample.Two decomposition methods were compared,and a mixture of HNO3＋HF was used to decompose the sample and the effect of the HF amount on the sample decomposition was examined.The adsorption effect of GdF3 on Ge was discussed.Three GdSiGe series alloy samples were analyzed,and the RSDs of this method were in the range of 0.85%～2.66%.

关键词： GdSiGe series alloys germanium analysis ICP-AES rare earths

High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

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Chinese Physics B 2016年第5期25卷 312-315页

作者：黄巍陆超余珏魏江镔陈超文汪建元徐剑芳王尘李成陈松岩刘春莉赖虹凯 Department of Physics Semiconductor Photonics Research CenterXiamen UniversityXiamen 361005China Xiamen University of Technology Xiamen 361005China Department of Physics and Oxide Research Center Hankuk University of Foreign StudiesYongin 449-791Korea

High-performance Ge n~＋/p junctions were fabricated at a low formation temperature from 325℃ to 400℃ with a metal（nickel）-induced dopant activation technique. The obtained Ni Ge electroded Ge n＋/p junction has a rectification ratio of 5.6×10~4 and a forward current of 387 A/cm^2at -1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET.

关键词： germanium metal-induced dopant activation NiGe n＋/P junction

Enhanced nonlinearity in photonic crystal fiber by germanium doping in the core region

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Chinese Optics Letters 2008年第2期6卷 93-95页

作者：孙婷婷开桂云王志袁树忠董孝义 Institute of Modern Optics Nankai University

germanium doping in silica can be used as a method for nonlinearity enhancement. Properties of the enhanced nonlinearity in photonic crystal fiber （PCF） with a GeO2-doped core are investigated theoretically by using all-vector finite element method. Numerical result shows that the nonlinear coefficient of PCF is greatly enhanced with increasing doping concentration, furthermore, optimal radius of the doped region should be considered for the desired operating wavelength.

关键词： Doping (additives) Finite element method germanium Photonic crystals Silica

Wide band polarizer with suspended germanium resonant grating

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Chinese Optics Letters 2012年第11期10卷 77-79页

作者：曹武刚麻健勇周常河 Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences Graduate University of Chinese Academy of Sciences

An ultra broad band polarizer that operates in the telecommunication wavelength band is proposed. This device, which consists of a single suspended germanium resonant grating layer, is designed using the inverse mathematical method and the rigorous vector diffraction theory. Calculated results indicate that the ultra broad band polarizer exhibits extremely high reflection （R 〉 99%） for TE polarization light and high transmission （T 〉 99%） for TM polarization at the wavelength range greater than 300 nm, and it has an extinction ratio of approximately 1 000 at the 1 550-nm central wavelength. The results of the rigorous coupled wave analysis indicate that the extremely wide band property of the TE polarization is caused by the excitation of strong modulation guided modes in the design wavelength range,

关键词： Diffraction gratings germanium Light transmission Polarization Wavelength

Pattern transition from nanohoneycomb to nanograss on germanium by gallium ion bombardment

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Chinese Physics B 2015年第5期24卷 460-463页

作者：郑晓虎张苗黄安平肖志松朱剑豪王曦狄增峰 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Department of Physics Beihang University Department of Physics and Materials Science City University of Hong Kong

During the irradiation of Ge surface with Ga＋ ions up to 1017 ions.cm 2, various patterns from ordered honeycomb to nanograss structure appear to be decided by the ion beam energy. The resulting surface morphologies have been studied by scanning electron microscopy and atomic force microscopy. For high energy Ga＋ irradiation （16-30 keV）, by controlling the ion fluence, we have captured that the equilibrium nanograss morphology also originates from the ordered honeycomb structure. When honeycomb holes are formed by ion erosion, heterogeneous distribution of the deposited energy along the holes leads to viscous flow from the bottom to the plateau. Redistribution of target atoms results in the growth of protuberances on the plateau, and finally the pattern evolution from honeycomb to nanograss with an equilibrium condition.

关键词： ion beam technology germanium nanopattems

Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors

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Chinese Physics B 2014年第3期23卷 640-644页

作者：李冲薛春来刘智成步文李传波王启明 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences

We report efficient zero-bias high-speed top-illuminated p-i-n photodiodes （PDs） with high responsivity fabricated with germanium （Ge） films grown directly on silicon-on-insulator （SOI） substrates. For a 15 p-m-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at -1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-p.m-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.

关键词： germanium photodetectors integrated optoelectronics optical interconnections

Ethanol-assisted ablation of silicon and germanium by temporally shaped femtosecond pulses

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Chinese Optics Letters 2015年第4期13卷 41-44页

作者：张广鸣李欣姜澜史雪松张开虎曹强陆永枫 Laser Micro/Nano Fabrication Laboratory School of Mechanical EngineeringBeijing Institute of Technology Department of Electrical Engineering University of Nebraska-Lincoln

A surprising phenomenon can be discovered by using femtosecond double-pulse ablation of silicon and germa- nium in ethanol. Tile ablation areas present an oscillation increase phenomenon when the pulse delay increases from 200 fs to 1 ps in the fluence range of 0.5-0.6 3/cm2. In contrast, the ablation areas exhibit an oscillation decrease phenonmnon as the pulse delay increases when the laser fluence F 〈 0.5 J/cm9, which is consistent with the results of the experiment in air. It is considered that the adjustment of the photon-electron coupling efficiency by pulse train technology plays an important role in the ablation process.

关键词： Electromagnetic pulse Ethanol germanium

Impact of nitrogen plasma passivation on the interface of germanium MOS capacitor

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Chinese Physics B 2014年第11期23卷 616-619页

作者：云全新黎明安霞林猛刘朋强李志强张冰馨夏宇轩张浩张兴黄如王阳元 Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.

关键词： germanium roughness interface trap density interfacial layer thickness