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Study of ge_2sb_2te_5 film for Nonvolatile Memory Medium

Journal of Materials Science & technology 2005年第1期21卷 95-99页

作者： BaoweiQIA YunfengLAI JieFENG YunLING YinyinLIN Ting'aoTANG BingchuCAI BomyCHEN ResearchInstituteofMicro/Nanometertechnology KeyLaboratoryforThinFilmandMicrofabricationTechnologyofMinistryofEducationShanghaiJiaoTongUniversityShanghai200030China DepartmentofMicroelectronics FudanUniversityShanghai200433China SiliconStoragetechnologyInc 1171SonoraCourtSunnyvaleCA94086USA

The amorphous ge2sb2te5 film with stoichiometric compositions was deposited by co-sputtering of separate ge, sb, and te targets on SiO2/Si (100) wafer in ultrahigh vacuum magnetron sputtering apparatus. The crystallization behavior of amorphous ge2sb2te5 film was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). With an increase of annealing temperature, the amorphous ge2sb2te5 film undergoes a two-step crystallization process that it first crystallizes in face-centered-cubic (fcc) crystal structure and finally fcc structure changes to hexagonal (hex) structure. Activation energy values of 3.636±0.137 and 1.579±0.005 eV correspond to the crystallization and structural transformation processes, respectively. From annealing temperature dependence of the film resistivity, it is determined that the first steep decrease of the resistivity corresponds to crystallization while the second one is primarily caused by structural transformation from 'fcc' to 'hex' and growth of the crystal grains. Current-voltage (Ⅰ-Ⅴ) characteristics of the device with 40 nm-thick ge2sb2te5 film show that the ge2sb2te5 film with nanometer order thickness is still applicable for memory medium of nonvolatile phase change memory.

关键词： Co-sputtering ge2sb2te5 film Activation energy Resistivity Memory medium

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Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

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Chinese Physics Letters 2008年第5期25卷 1848-1849页

作者：徐成刘波陈一峰梁爽宋志棠封松林万旭东杨左娅谢志峰陈邦明 Laboratory of Nanotechnology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 Graduate School of the Chinese Academy of Sciences Beijing: 100049 Graduate School of the Chinese Academy of Sciences Beijing 100049 Semiconductor Manufacturing Interntionai Corporation Shanghai 201203

A ge2sb2te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor （MOSFET） is fabricated using standard 0.18 #m complementary metM-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

关键词： ge2sb2te5 film

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Chalcogenide Random Access Memory Cell with Structure of W Sub-Microtube Heater Electrode

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Chinese Physics Letters 2007年第1期24卷 262-264页

作者：刘波冯高明吴良才宋志棠刘奇斌封松林 CHEN Bomy Laboratory of Nanotechnology Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 Silicon Storage technology Inc. 1171 Sonora Court Sunnyvale CA 94086 USA

In order to reduce the reset current of cllalcogenide random access memory; a W sub-microtube heater electrode with outer/inner diameter of 260/100nm, which was fabricated with standard 0.184-μm technology, is proposed for the first time to achieve a reset current of about 0.5 mA. The reasons may be that sub-microtube increases the number of electrode edge and thermal efficiency is improved greatly because the thermal density on the edge of sub-microtube electrode is generally the highest.

关键词： PHASE-CHANge MEMORY ION-BEAM METHOD sb2te3 MAteRIAL ge2sb2te5 film ELEMENT CRYSTALLIZATION Heaters thermal efficiency Electrodes immunocytes Crystallization reset current

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