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Self-assembly of graphene oxide nanosheets in t-butanol/water medium under gamma-ray radiation

Chinese Chemical Letters 2018年第6期29卷 931-934页

作者： Weikang Wang Yihu Wu Zhiwen Jiang Mozhen Wang Qichao Wu Xiao Zhou Xuewu Ge CAS Key Laboratory of Soft Matter Chemistry Department of Polymer Science and Engineering University of Science and Technology of China Guangdong Tianan New Material Co. Ltd.

The research on the properties of graphene oxide（GO） in various media has become one of the hottest topics since GO is now the main raw material for graphene-based advanced materials. In this work, the g-ray radiation chemistry effect of GO nanosheets and their self-aggregation behavior in t-butanol/water medium were investigated. The results show that GO nanosheets are reduced and hydroxyalkylated simultaneously by the alcohol free radicals produced by the radiolysis of t-butanol/water solution under g-ray radiation. The radiation-modified GO nanosheets will self-assemble into a self-standing graphene hydrogel when the p H of the solution is lower than 2. A hydroxyl-functionalized free-standing graphene aerogel is further obtained simply by freeze-drying. This work provides not only a general self-assembly mechanism of GO nanosheets in strong acidic alcohol/water media under high energy radiation, but also a facile and economical preparation method for hydroxyalkylated graphene-based aerogel.

关键词： Graphene oxide gamma-ray radiation t-Butanol/water solution Self-assembly Hydroxyalkylation Graphene hydrogel Graphene aerogel

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Total dose test with γ-ray for silicon single photon avalanche diodes

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Chinese Physics B 2020年第8期29卷 516-519页

作者：刘巧莉张海燕郝凌翔胡安琪吴光郭霞 School of Information Beijing University of TechnologyBeijing 100124China School of Electronic Engineering State Key Laboratory for Information Photonics and Optical CommunicationsBeijing University of Posts and TelecommunicationsBeijing 100876China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200062China

gamma-ray(γ-ray)radiation for silicon single photon avalanche diodes(Si SPADs)is evaluated,with total dose of 100 krad(Si)and dose rate of 50 rad(Si)/s by using 60Co as theγ-ray radiation source.The breakdown voltage,photocurrent,and gain have no obvious change after the radiation.However,both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation.Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers.Both leakage current and dark count rate can be almost recovered after annealing at 200℃for about 2 hours,which verifies the radiation damage mechanics.

关键词： gamma-ray radiation silicon single photon avalanche diode(Si SPAD) radiation damage

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