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检索条件"主题词=Gallium Nitride"
85 条 记 录,以下是1-10 订阅
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Growth of gallium nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
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Acta Metallurgica Sinica(English Letters) 2019年 第12期32卷 1530-1536页
作者: Ying-Feng He Mei-Ling Li San-Jie Liu Hui-Yun Wei Huan-Yu Ye Yi-Meng Song Peng Qiu Yun-Lai An Ming-Zeng Peng Xin-He Zheng School of Mathematics and Physics Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface ScienceUniversity of Science and Technology Beijing
In this work,the GaN thin films were directly deposited on multilayer graphene(MLG)by plasma-enhanced atomic layer *** deposition was carried out at a low temperature using triethylgallium(TEGa)precursor and Ar/N2/H2 ... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Direct growth of graphene on gallium nitride by using chemical vapor deposition without extra catalyst
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Chinese Physics B 2014年 第9期23卷 358-363页
作者: 赵云 王钢 杨怀超 安铁雷 陈闽江 余芳 陶立 羊建坤 魏同波 段瑞飞 孙连峰 Semiconductor Lighting Technology Research and Development Center Institute of SemiconductorsChinese Academy of Sciences National Center for Nanoscience and Technology University of Chinese Academy of Sciences
Graphene on gallium nitride (GaN) will be quite useful when the graphene is used as transparent electrodes to improve the performance of gallium nitride devices. In this work, we report the direct synthesis of graph... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Self-screening of the polarized electric field in wurtzite gallium nitride along[0001]direction
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Chinese Physics B 2022年 第4期31卷 589-596页
作者: Qiu-Ling Qiu Shi-Xu Yang Qian-Shu Wu Cheng-Lang Li Qi Zhang Jin-Wei Zhang Zhen-Xing Liu Yuan-Tao Zhang Yang Liu School of Electronics and Information Technology Sun Yat-Sen UniversityGuangzhou 510275China States Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China
The strong polarization effect of GaN-based materials is widely used in high-performance devices such as white-lightemitting diodes(white LEDs),high electron mobility transistors(HEMTs),and GaN polarization ***,the cu... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
In-situ multi-information measurement system for preparing gallium nitride photocathode
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Chinese Physics B 2012年 第3期21卷 1-4页
作者: 付小倩 常本康 钱芸生 张俊举 Institute of Electronic Engineering and Optoelectronic Technology Nanjing University of Science and Technology School of Information Science and Engineering University of Jinan
We introduce the first domestic in-situ multi-information measurement system for a gallium nitride (GaN) photo- cathode. This system can successfully fulfill heat cleaning and activation for GaN in an ultrahigh vacu... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Optimization of gallium nitride-based laser diode through transverse modes analysis
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Chinese Optics Letters 2007年 第10期5卷 588-590页
作者: Xiaomin Jin 章蓓 Liang Chen 代涛 张国义 Electrical Engineering Department California Polytechnic State University San Luis Obispo CA 93407 USA School of Physics and State Key Laboratory for Artificial Microstructures and Mesoscopic Physics Peking University Beijing 100871 RSoft Design Group Inc. 400 Executive Boulevard Suite 100 Ossining NY 10562 USA
We investigate the transverse mode pattern in GaN quantum-well (QW) laser diode (LD) by numerical calculation. We optimize the current GaN LD structure by varying the n-GaN layer thickness. The n-type GaN layer is... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Direct growth of graphene on gallium nitride using C2H2 as carbon source
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Frontiers of physics 2016年 第2期11卷 97-102页
作者: 王兵 赵云 伊晓燕 王国宏 刘志强 段瑞飞 黄鹏 王军喜 李晋闽 Semiconductor Lighting Technology R&D Center Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China
Growing graphene on gallium nitride (GaN) at temperatures greater than 900℃ is a challenge that must be overcome to obtain high quality of GaN epi-layers. We successfully met this challenge using C2H2 as the carbon... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Photocatalytic Decarboxylative Minisci Reaction Catalyzed by Palladium-Loaded gallium nitride
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Precision Chemistry 2023年 第7期1卷 437-442页
作者: Lida Tan Hyotaik Kang Mingxin Liu Hui Su Jing-Tan Han Chao-Jun Li Department of Chemistry and FQRNT Centre for Green Chemistry and CatalysisMcGill UniversityMontrealQC H3A 0B8Canada State Key Laboratory of Applied Organic Chemistry College of Chemistry and Chemical EngineeringLanzhou UniversityLanzhouGansu 730000China
The decarboxylative Minisci reaction is a versatile tool for the direct C-H alkylation of heteroarenes,where stoichiometric amounts of oxidants or expensive,precious metal reagents are commonly ***,we reported a photo... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
High laser damage threshold reflective optically addressed liquid crystal light valve based on gallium nitride conductive electrodes
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High Power Laser Science and Engineering 2022年 第6期10卷 8-14页
作者: Zhibo Xing Wei Fan Dajie Huang He Cheng Tongyao Du National Laboratory on High Power Laser and Physics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghaiChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina
In this paper,the feasibility of a high laser damage threshold liquid crystal spatial light modulator based on gallium nitride(GaN)transparent conductive electrodes is *** laser-induced damage threshold(LIDT)is measur... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论
Self-assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films
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Nano Research 2018年 第1期11卷 565-576页
作者: David van Treeck Gabriele Calabrese Jelle J. W. Goertz Vladimir M. Kaganer Oliver Brandt Sergio Fernandez-Garrido, Lutz Geelhaar PauI-Drude-lnstitut f~r Festk6rperelektronik Leibniz-lnstitut im Forschungsverbund Berlin e.V. Hausvogteiplatz 5-7 I 0117 Berlin Germany
We investigate in detail the self-assembled nucleation and growth of vertically oriented GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows for the grow... 详细信息
来源: 维普期刊数据库 维普期刊数据库 评论
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
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Chinese Physics B 2010年 第7期19卷 471-478页
作者: 郭希 王玉田 赵德刚 江德生 朱建军 刘宗顺 王辉 张书明 邱永鑫 徐科 杨辉 State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences
This paper investigates the major structural parameters, such as crystal quality and strain state of (001)-oriented GaN thin films grown on sapphire substrates by metalorganic chemical vapour deposition, using an in... 详细信息
来源: 维普期刊数据库 维普期刊数据库 同方期刊数据库 同方期刊数据库 评论