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Source-field-plated ga_2o_3 MoSFET with a breakdown voltage of 550 V

Journal of Semiconductors 2019年第1期40卷 77-79页

作者： Yuanjie Lü Xubo Song Zezhao He Yuangang Wang Xin Tan Shixiong Liang Cui Wei Xingye Zhou Zhihong Feng National Key Laboratory of Application Specific Integrated Circuit (ASIC) Hebei Semiconductor Research Institute

ga_2o_3 metal–oxide–semiconductor field-effect transistors(MoSFETs) with high-breakdown characteristics were fabricated on a homoepitaxial n-typed β-ga_2o_3 film, which was grown by metal organic chemical vapor deposition(MoCVD) on an Fedoped semi-insulating(010) ga_2o_3 substrate. The structure consisted of a 400 nm unintentionally doped(UID) ga_2o_3 buffer layer and an 80 nm Si-doped channel layer. A high k Hfo_2 gate dielectric film formed by atomic layer deposition was employed to reduce the gate leakage. Moreover, a source-connected field plate was introduced to enhance the breakdown characteristics. The drain saturation current density of the fabricated device reached 101 mA/mm at V_(gs) of 3 V. The off-state current was as low as 7.1 ×10^(-11) A/mm, and the drain current I_(oN)/I_(oFF) ratio reached 10~9. The transistors exhibited three-terminal off-state breakdown voltages of 450 and 550 V, corresponding to gate-to-drain spacing of 4 and 8 μm, respectively.

关键词： ga_2o_3 MoSFET breakdown voltage filed plate

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维普期刊数据库

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A simulation study of field plate termination in ga2o3 Schottky barrier diodes

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Chinese Physics B 2018年第12期27卷 455-460页

作者： Hui Wang Ling-Li Jiang Xin-Peng Lin Si-Qi Lei Hong-Yu Yu Department of Electrical and Electronic Engineering Southern University of Science and TechnologyShenzhen 518055China School of Electronic Science and Engineering Southeast UniversityNanjing 210096China Shenzhen Key Laboratory of The Third Generation Semiconductor Shenzhen 518055China Guangdong gaN Devices Engineering and Technical Research Center Shenzhen 518055China

In this work, the field plate termination is studied for ga2o3Schottky barrier diodes(SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are *** is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of Sio2, Al2o3, and Hfo2. As the thickness increases, the maximum electric field intensity decreases in Sio2and Al2o3, but increases in ***, it is found that Sio2and Hfo2are suitable for the 600 V rate ga2o3SBD, and Al2o3is suitable for both600 V and 1200 V rate ga2o3SBD. In addition, the comparison of ga2o3SBDs between the SiC and gaN counterpart reveals that for ga2o3, the breakdown voltage bottleneck is the dielectric. While, for SiC and gaN, the bottleneck is mainly the semiconductor itself.

关键词： ga_2o_3 Schottky barrier diode field plate termination technique

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维普期刊数据库

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Fabrication of hexagonal gallium nitride films on silicon (111) substrates

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Rare Metals 2003年第3期22卷 221-225页

作者： YANGLi XUEChengshan WANGCuimei LIHuaixiang RENYuwen ChemistryFunctionMaterialsLab InstituteofSemiconductorsShandongNormalUniversityJinan250014China PhysicsDe0artment ShandongNormalUniversityJinan250014China InspectionInstituteforElectronicProductsofShandong Jinan250000China

Hexagonal gallium nitride films were successfully fabricated throughammoniating ga_2o_3 films deposited on silicon (111) substrates by electrophoresis. The structure,composition, and surface morphology of the formed films were characterized by X-ray diffraction(XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmissionelectron microscopy (TEM). The measurement results reveal that the polycrystalline gaN films withhexagonal wurtzite structure were successfully grown on the silicon (111) substrates. Preliminaryresults suggest that varying the ammoniating temperature has obvious effect on the quality of thegaN films formed with this method.

关键词： semiconductor materials gaN films electrophoresis ga_2o_3

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