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Self-catalyzed growth of gasb nanowires for high performance ultraviolet-visible-near infrared photodetectors

Science China Materials 2020年第3期63卷 383-391页

作者： Kai Zhang Ruiqing Chai Ruilong Shi Zheng Lou Guozhen Shen State Key Laboratory of Superlattices and Microstructures Institution of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Opto-electronic Engineering University of Chinese Academy of SciencesBeijing 100029China Hebei Key Lab of Optic-electronic Information and Materials the College of Physics Science and TechnologyHebei UniversityBaoding 071002China

A simple self-catalyzed chemical vapor deposition process was conducted to synthesize single-crystalline gasb nanowires,where Ga droplets were utilized as the *** as-grown gasb nanowires exhibited typical p-type semiconductor behavior with the calculated hole mobility of about 0.042 cm^2 V^-1 s^-*** photoresponse properties of the gasb nanowires were studied by fabricating nanowire photodetectors on both rigid and flexible *** results revealed that the photodetectors exhibited broad spectral response ranging from ultraviolet,visible,to near-infrared *** the device on rigid substrate,the corresponding responsivity and the detectivity were calculated to be 3.86×10^3 A W-1 and 3.15×10^13 Jones for 500 nm light,and 7.22×10^2 A W-1 and 5.90×10^12 Jones for 808 nm light,respectively,which were the highest value compared with those of other reported Ga1-xInxAsySb1-y structure ***,the flexible photodetectors not only maintained the comparable good photoresponse properties as the rigid one,but also possessed excellent mechanical flexibility and *** study could facilitate the understanding on the fundamental characteristics of self-catalyzed grown gasb nanowires and the design of functional nano-optoelectronic devices based on gasb nanowires.

关键词： gasb nanowires chemical vapor deposition mobility photoresponse near-infrared flexible

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Ag-catalyzed gasb nanowires for flexible near-infrared photodetectors

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Journal of Semiconductors 2022年第11期43卷 29-37页

作者： Zixu Sa Fengjing Liu Dong Liu Mingxu Wang Jie Zhang Yanxue Yin Zhiyong Pang Xinming Zhuang Peng Wang Zaixing Yang School of Physics School of MicroelectronicsState Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China College of Electronic and Information Engineering Shandong University of Science and TechnologyQingdao 266590China

High-quality narrow bandgap semiconductors nanowires(NWs)challenge the flexible near-infrared(NIR)photodetectors in next-generation imaging,data communication,environmental monitoring,and bioimaging *** this work,complementary metal oxide semiconductor-compatible metal of Ag is deposited on glass as the growth catalyst for the surfactantassisted chemical vapor deposition of gasb *** uniform morphology,balance stoichiometry,high-quality crystallinity,and phase purity of as-prepared NWs are checked by scanning electron microscopy,energy dispersive X-ray spectroscopy,high-resolution transmission electron microscopy,and X-ray *** electrical properties of as-prepared NWs are studied by constructing back-gated field-effect-transistors,displaying a high I_(on)/I_(off) ratio of 10^(4) and high peak hole mobility of 400 cm^(2)/(V·s).Benefiting from the excellent electrical and mechanical flexibility properties,the as-fabricated NW flexible NIR photodetector exhibits high sensitivity and excellent photoresponse,with responsivity as high as 618 A/W and detectivity as high as 6.7×10^(10) ***,there is no obvious decline in NIR photodetection behavior,even after parallel and perpendicular folding with 1200 cycles.

关键词： near-infrared photodetector flexible gasb nanowires CMOS-compatible catalyst

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