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Time behavior of field screening effects in small-size gaas photoconductive terahertz antenna

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Frontiers of Optoelectronics 2015年第1期8卷 98-103页

作者： Tianyi WANG Zhengang YANG Si ZOU Kejia WANG Shenglie WANG Jinsong LIU Wuhan National Laboratory for Optoelectronics School of Optical and Electronic Information Huazhong University of Science and Technology Wuhan 430074 China

在小尺寸的 gaas 屏蔽效果的地光导(PC ) 天线经由著名的泵和探查兆兆赫(THz ) 被调查产生技术。当泵探查时间延期的功能被测量， THz 脉搏的山峰振幅由探查激光脉搏激动。一个相等电路的模型被用来模仿试验性的数据。基于在模拟和实验... 详细信息

在小尺寸的 gaas 屏蔽效果的地光导(PC ) 天线经由著名的泵和探查兆兆赫(THz ) 被调查产生技术。当泵探查时间延期的功能被测量， THz 脉搏的山峰振幅由探查激光脉搏激动。一个相等电路的模型被用来模仿试验性的数据。基于在模拟和实验的结果之间的好协议，放射的时间行为和空间费用地被模仿。结果证明主导地屏蔽的空间费用决定设备反应在自始至终，当放射走了时，屏蔽在强烈影响山峰 THz 地的起始的时间起一个关键作用。参数分析被执行，它可能作为 THz emitter 在为天线的最佳设计上是珍贵的。

关键词：太赫兹脉冲 gaas 时间行为天线场光电导小尺寸空间电荷场放映

Outer space grown semi-insulating gaas and its applications

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Science China(Technological Sciences) 1999年第5期42卷 456-461页

作者：林兰英张绵钟兴儒陈诺夫 Masayoshi Yamada Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Hebei Institute of Semiconductors Department of Electronics & Information Science Kyoto Institute of Technology

gaas single crystal has been grown in recoverable satellite. Hall measurements indicate that the gaas shows semi-insulating behavior. The structural properties of the crystal have been improved obviously, and their uniformity has been improved as well. The stoichiometry and its distribution in space-grown gaas are improved greatly compared with the gaas single crystal grown terrestrially. The properties of integrated circuits made by direct ion-implantation on space-grown gaas are better than those made on ground-grown materials. These results show that the stoichiometry in semi-insulating gaas seriously affects the properties of related devices.

关键词： gaas outer-space microgravity integrated-circuit.

Experimental observation of spontaneous chaotic current oscillations in gaas/Al_(0.45)Ga_(0.55)As superlattices at room temperature

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Chinese Science Bulletin 2012年第17期57卷 2070-2072页

作者： HUANG YuYang LI Wen MA WenQuan QIN Hua ZHANG YaoHui Suzhou Institute of Nano-tech and Nano-bionies Chinese Academy of Sciences Suzhou 215123China Institute of Semiconductors Chinese Academy of Sciences Beijing 100083China

Spontaneous self-sustained chaotic current oscillations are observed experimentally in lightly-doped weakly-coupled gaas/Al0.45Ga0.55As superlattices at room temperature for the first time.The mole fraction of Aluminum in the barrier is chosen to be 0.45 to suppress the thermal carrier leakage through the X-band valley,The effective nonlinearity induced by the sequential well-to-well resonant tunneling can still be strong enough to induce spontaneous chaotic current oscillations even at room temperature,The frequency spectrum of the chaotic current oscillations is ranged from DC to 4 GHz,which can be used as ultra-wide-band noise sources with a bandwidth of several Giga Hertz.

关键词：实验观察超晶格混沌室温振动电流振荡 gaas 摩尔分数

Four-junction Algaas/gaas laser power converter

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Journal of Semiconductors 2018年第4期39卷 44-48页

作者： Jie Huang Yurun Sun Yongming Zhao Shuzhen Yu Jianrong Dong Jiping Xue Chi Xue Jin Wang Yunqing Lu Yanwen Ding Key Laboratory of Nano Devices and Applications Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences Suzhou 215123 China University of Chinese Academy of Sciences Beijing 100049 China Zhongtian Technology Group Co. Ltd Nantong 226009 China School of Opto-Electronic Engineering Nanjing University of Posts and Telecommunications Nanjing 210023 China

Four-junction A1gaas/gaas laser power converters （LPCs） with n＋-gaas/p＋-A10.37Ga0.63As hetero- structure tunnel junctions （TJs） have been designed and grown by metal-organic chemical vapor deposition （MOCVD） for converting the power of 808 nm lasers. A maximum conversion efficiency ηc of 56.9% ＋ 4% is obtained for cells with an aperture of 3.14 mm2 at an input laser power of 0.2 W, while dropping to 43.3% at 1.5 W. Measured current-voltage （I-V） characteristics indicate that the performance of the LPC can be further improved by increasing the tunneling current density of TJs and optimizing the thicknesses of sub-cells to achieve current matching in LPC.

关键词： laser power converters （LPCs） metal-organic chemical vapor deposition （MOCVD） gaas

Inhomogeneity of Rare Earth Doped Ⅲ-Ⅴ Compounds Grown by LPE

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Rare Metals 1990年第2期10卷 145-149页

作者： Yuan Yourong He Shengfu Zhu Youcai,Li Xiangwen Zhao Yu Du Shuqin Shi Yihe Liu Guoyuan Li Yunyi Zhou Ji Changchun Institute of Physics,Academia Sinica 130021 China General Research Institute for Non-ferrous Metals,Beijing 100088 Department of Chemistry, Peking University 中科院长春物理所吉林长春北京有色金属研究总院北京北京大学北京

The processing of InP, gaas and related compounds doped with rare earth metals, such as Er, Nd and Gd, grown by LPE is described. The inhomogeneity of rare earth heavily doped epi-layers is studied by SIMS, SEM and X-... 详细信息

关键词： gaas Inhomogeneity of Rare Earth Doped Compounds Grown by LPE

Effects of channel-substrate interface on hysteresis of sidegating effect in gaas MESFETs

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Chinese Science Bulletin 2010年第34期55卷 3950-3953页

作者： DING Yong YAN XiaoLang Institute of VLSI Design Zhejiang University Hangzhou 310027 China

With sidegating bias,hysteresis of sidegating effect is usually observed in drain current.The experimental results presented in this letter demonstrate that the hysteresis with time-based characteristics is closely related to EL2 traps and channel-substrate(C-S)junction peculiarities.The response of depletion region of C-S junction to the electron capture and emission by trap-EL2 plays an important role in the hysteresis.Furthermore,a new mechanism is proposed to explain the time-based characteristics of hysteresis,i.e.,there is a "steady-state" in which the hysteresis disappears.

关键词：旁栅效应 MESFET gaas 界面效应迟滞通道俘获反应交界地区

Spectrum and Binding Energy of an Off-Center Hydrogenic Donor in a Spherical Quantum Dot

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Communications in Theoretical Physics 2010年第8期54卷 369-372页

作者：袁建辉黄锦胜尹淼曾奇军张俊佩 Department of Physics Huazhong University of Science and Technology Jieyang Vocational and Technical College

Off-center impurity effects in a spherical quantum dot are theoretically studied by degenerate perturbationmethod in strong confinement.The energy levels and binding energies are computed for the typical gaas material asfunction of the donor position.The numerical results show the quantum size effect.We note that the energy levels andbinding energies are not only related to the position of donor and the strength of confinement,but also related to thefold of degenerate states.We can see obviously that gaps will appear among the degenerate states and the splitting ofenergy levels and binding energies will appear as the position of the impurity is shifted away off the center.

关键词：结合能量子点球形施主量子尺寸效应计算结果功能材料 gaas

Influence of polaron effects on the ground state of weak-coupling exciton in semiconductor quantum dots

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Optoelectronics Letters 2010年第4期6卷 317-320页

作者：额尔敦朝鲁乌云其木格辛伟 Institute of Condensed Matter Physics Hebei Normal University of Science & Technology College of Physics and Electronic Information Inner Mongolia University for Nationalities

The influence of polaron effects on the effective potential of weak-coupling exciton in semiconductor quantum dots(QDs) is studied based on the Lee-Low-Pines-Huybrechts variational method.The results show that the effective potential of the exciton consists of three parts:coulomb potential,induced potential and confining potential.Numerical calculations for the gaas quantum dot,as an example,are performed.The result indicates that the effective potential of the exciton increases with the electron-hole distance.It is found that the polaron effects have remarkable influence on the states of the exciton:helpful to the stability of the light-hole exciton,but unfavorable to the stability of the heavy-hole exciton.

关键词：半导体量子点极化子激子极化子效应弱耦合基态 gaas 诱发电位有效势

Low-frequency noises in gaas MESFET’s currents associated with substrate conductivity and channel-substrate junction

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Chinese Science Bulletin 2011年第12期56卷 1267-1271页

作者： DING Yong YAN XiaoLang Institute of VLSI Design Zhejiang University Hangzhou 310027 China

Low-frequency noises in gaas MESFET are usually observed when investigating the drain current and substrate leakage current under sidegate bias conditions. Experimental results show that the magnitude of low-frequency noises is in a direct dependency upon the sidegate bias and the noises in drain current will disappear if sidegate bias increases more negatively beyond a certain voltage. A mechanism associated with the substrate conductivity and the channel-substrate junction modulated by sidegate bias is proposed to explain the fluctuation of low-frequency noises.

关键词：砷化镓MESFET 低频噪音泄漏电流导电性衬底通道基体 gaas