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Drive current of accumulation-mode p-channel SOI-based wrap-gated fin-fets

Journal of Semiconductors 2011年第9期32卷 29-33页

作者：张严波杜彦东熊莹杨香韩伟华杨富华 Engineering Research Center for Semiconductor Integration Technology Institute of SemiconductorsChinese Academy of Sciences Department of Electronic Engineering Tsinghua University State Key Laboratory for Superlattices and Microstructures

Comparisons are performed to study the drive current of accumulation-mode（AM） p-channel wrap-gated *** drive current of the AM p-channel fet is 15%-26%larger than that of the inversion-mode （IM） p-channel fet with the same wrap-gated fin channel,because of the body current component in the AM fet, which becomes less dominative as the gate overdrive becomes *** drive currents of the AM p-channel wrap-gated fin-fets are 50%larger than those of the AM p-channel planar fets,which arises from effective conducting surface broadening and volume accumulation in the AM wrap-gated *** effective conducting surface broadening is due to wrap-gate-induced multi-surface conduction,while the volume accumulation,namely the majority carrier concentration anywhere in the fin cross section exceeding the fin doping density,is due to the coupling of electric fields from different parts of the wrap ***,for AM p-channel wrap-gated fin-fets, the current in channel along 110 is larger than that in channel along 100,which arises from the surface mobility difference due to different transport directions and surface *** is more obvious as the gate overdrive becomes larger,when the surface current component plays a more dominative role in the total current.

关键词： accumulation mode inversion mode wrap gate fin-fet volume accumulation

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Electrical contacts to two-dimensional transition-metal dichalcogenides

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Journal of Semiconductors 2018年第12期39卷 60-67页

作者： Shuxian Wanga Zhihao Yu Xinran Wang Kansas Academy of Mathematics and Science Fort Hays State University600ark StreetHaysKansas 67601-4099USA National Laboratory of Solid State Microstructures School of Electronic Science and Engineeringand Collaborate Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China

Two-dimensional(2D) transition-metal dichalcogenides(TMDCs) have attracted enormous interests as the novel channel materials for atomically thin transistors. Despite considerable progress in recent years, the transistor performance is largely limited by the excessive contact resistance at the source/drain interface. In this review, a summary of recent progress on improving electrical contact to TMDC transistors is presented. Several important strategies including topology of contacts, choice of metals and interface engineering are discussed.

关键词： two-dimension channel materials fin-fet

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