咨询与建议

限定检索结果

文献类型

  • 1 篇 期刊文献

馆藏范围

  • 1 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 1 篇 工学
    • 1 篇 材料科学与工程(可...
    • 1 篇 电子科学与技术(可...
    • 1 篇 计算机科学与技术...

主题

  • 1 篇 ferroelectric de...

机构

  • 1 篇 hangzhou institu...
  • 1 篇 key laboratory o...
  • 1 篇 college of integ...
  • 1 篇 zhejiang lab

作者

  • 1 篇 gaobo lin
  • 1 篇 huaxiang yin
  • 1 篇 bowen chen
  • 1 篇 bing chen
  • 1 篇 yian ding
  • 1 篇 haoji qian
  • 1 篇 minglei ma
  • 1 篇 chengji jin
  • 1 篇 ran cheng
  • 1 篇 jiacheng xu
  • 1 篇 xinda song
  • 1 篇 yan liu
  • 1 篇 jiayi zhao
  • 1 篇 gaobo xu
  • 1 篇 genquan han
  • 1 篇 rongzong shen
  • 1 篇 jiajia chen
  • 1 篇 hongrui zhang
  • 1 篇 miaomiao zhang
  • 1 篇 huan liu

语言

  • 1 篇 英文
检索条件"主题词=Ferroelectric devices"
1 条 记 录,以下是1-10 订阅
An AND-type 1T-FeFET array with robust write and read operations
收藏 引用
Science China(Information Sciences) 2025年 第2期68卷 395-396页
作者: Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
HfO2-based ferroelectric field-effect transistor(Fe FET) has become a promising solution for next-generation embedded non-volatile memory(NVM) owing to its complementary metal-oxide-semiconductor(CMOS) compatibi... 详细信息
来源: 同方期刊数据库 同方期刊数据库 同方期刊数据库 同方期刊数据库 评论