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Synergically enhanced piezocatalysis performance of eco-friendly(K_(0.52)Na_(0.48))NbO_(3) through ferroelectric polarization and defects

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International Journal of Minerals,Metallurgy and Materials 2023年第10期30卷 2044-2054页

作者： Min Zhou Laijun Liang Dingze Lu Xiaomei Lu Zheng Wang Fengzhen Huang Pengfei Cheng Dongdong Liu Mengqi Tian Qiuping Wang Yunjie Zhang School of Science Xi’an Polytechnic UniversityXi’an 710048China National Laboratory of Solid State Microstructures and Physics School Nanjing UniversityNanjing 210093China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China School of Advanced Materials and Nanotechnology Xidian UniversityXi’an 710126China National Engineering Laboratory for Modern Silk College of Textile and Clothing EngineeringSoochow UniversitySuzhou 215123China

Piezocatalysis has attracted unprecedented research interest as a newly emerging catalysis ***,the inherent insulating property of ferroelectric materials ultimately leads to the poor vibration-electricity conversion ***,this work reports the(K_(0.52)Na_(0.48))NbO_(3) ferroelectric ceramics(KNNFCx),for which the FeCo modification strategy is *** substitution of the moderate amount of FeCo(x=0.015)at Nb site not only optimizes ferroelectricity but also produces beneficial defects,notably increasing Rhodamine B water purification efficiency to 95%.The pinning effect of monovalent oxygen vacancies on ferroelectric domains is responsible for the excellent ferroelectric polarization of KNNFC0.015 through the generation of an internal field to promote charge carriers separation and reduce nonradiative ***,the accompanying electron carriers can easily move to the material surface and participate in redox reactions because they have low activation ***,ferroelectric polarization and defects play synergetic roles in enhancing piezocatalytic performance.

关键词： piezocatalytic water purification ferroelectric polarization beneficial defects

Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf_(0.5)Zr_(0.5)O_(2)thin films by implementing W electrode

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Journal of Materials Science & Technology 2022年第9期104卷 1-7页

作者： Dao Wang Yan Zhang Jiali Wang Chunlai Luo Ming Li Wentao Shuai Ruiqiang Tao Zhen Fan Deyang Chen Min Zeng Jiyan Y.Dai Xubing B.Lu J-M.Liu Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina Laboratory of Solid State Microstructures and Innovation Centre of Advanced Microstructures Nanjing UniversityNanjing 210093China

This paper reports the improvement of electrical,ferroelectric and endurance of Hf_(0.5)Zr_(0.5)O_(2)(HZO)thinfilm capacitors by implementing W *** W/HZO/W capacitor shows excellent pristine 2 P_(r)values of 45.1 gC/cm^(2)at±6 V,which are much higher than those of TiN/HZO/W(34.4μC/cm^(2))and W/HZO/TiN(26.9μC/cm^(2))***,the maximum initial 2 P_(r)value of W/HZO/W capacitor can reach as high as 57.9μC/cm^(2)at±7.5 *** strong ferroelectric polarization effects are ascribed to the W electrode with a fairly low thermal expansion coefficient which provides a larger in-plane tensile strain compared with TiN electrode,allowing for enhancement of o-phase ***,the W/HZO/W capacitor also exhibits higher endurance,smaller wake-up effect(10.1%)and superior fatigue properties up to 1.5×10^(10)cycles compared to the TiN/HZO/W and W/HZO/TiN *** improvements of W/HZO/W capacitor are mainly due to the decreased leakage current by more than an order of magnitude compared to the W/HZO/TiN *** results demonstrate that capping electrode material plays an important role in the enhancement of o-phase formation,reduces oxygen vacancies,mitigates wake-up effect and improves reliability.

关键词： Hf_(0.5)Zr_(0.5)O_(2)films ferroelectric polarization Endurance properties Thermal expansion coefficient W electrode

Enhanced memristor performance via coupling effect of oxygen vacancy and ferroelectric polarization

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Journal of Materials Science & Technology 2024年第4期171卷 139-146页

作者： Zhi Yun Yue Zhi Dong Zhang Zhan Jie Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China School of Materials Science and Engineering Shenyang University of TechnologyShenyang 110870China

As a new type of nonvolatile memory,the resistive memristor has broad application prospects in in-formation storage and neural computing based on its excellent resistive switching(RS)*** present,it is still a great challenge to improve both ferroelectric polarization and leakage current to achieve a high RS on/offratio of ferroelectric ***,epitaxial Pb(Zr_(0.40)Ti_(0.60))O_(3)(PZT)thin films with low content Ca doping were deposited on the Nb:SrTiO_(3)substrate to prepare PCZT/NSTO het-erostructures and their RS behaviors were *** research findings show that compared with pure PZT film,the ferroelectric polarization of 1-mol%-Ca-doped PZT film is slightly improved,while the leak-age current is increased by three orders of ***,the RS on/offratio reaches 2.5×10^(5),about three orders of magnitude higher than pure PZT *** theoretical analysis reveals that the RS behavior of PCZT/NSTO heterostructures is controlled by the PCZT/NSTO interfacial barrier and the space charge-limited current *** results demonstrate that the ferroelectricity and electricity of ferroelectric thin films can be improved simultaneously by doping low-content Ca ions to increase the RS performance,which provides a good reference for the development of high-performance ferroelectric memristor devices.

关键词： ferroelectric memristor Ca-doped PZT ferroelectric polarization Oxygen vacancies Resistive switching

ferroelectric polarization-enhanced photocatalytic performance of heterostructured BaTiO_(3)@TiO_(2) via interface engineering

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Journal of Central South University 2021年第12期28卷 3778-3789页

作者： FAN Bao-yan LIU Hai-bo WANG Zhen-hui ZHAO Yi-wen YANG Sen LYU Si-yi XING An ZHANG Jun LI He LIU Xiao-yan Chongqing Key Laboratory of Nano/Micro Composites and Devices College of Metallurgy and Materials EngineeringChongqing University of Science and TechnologyChongqing 401331China The Molecular Foundry Lawrence Berkeley National LaboratoryBerkeleyCalifornia 94720USA

A catalyst of ferroelectric-BaTiO_(3)@photoelectric-TiO_(2) nanohybrids(BaTiO_(3)@TiO_(2))with enhanced photocatalytic activity was synthesized via a hydrolysis precipitation combined with a hydrothermal *** to pure TiO_(2),pure BaTiO_(3) and BaTiO_(3)/TiO_(2) physical mixture,the heterostructured BaTiO_(3)@TiO_(2) exhibits significantly improved photocatalytic activity and cycling stability in decomposing Rhodamine B(RhB)and the degradation efficiency is 1.7 times higher than pure TiO_(2) and 7.2 times higher than pure BaTiO_(3).These results are mainly attributed to the synergy effect of photoelectric TiO_(2),ferroelectric-BaTiO_(3) and the rationally designed interfacial *** mesoporous microstructure of TiO_(2) is of a high specific area and enables excellent photocatalytic *** ferroelectric polarization induced built-in electric field in BaTiO_(3) nanoparticles,and the intimate interfacial interactions at the interface of BaTiO_(3) and TiO_(2) are effective in driving the separation and transport of photogenerated charge *** strategy will stimulate the design of heterostructured photocatalysts with outstanding photocatalytic performance via interface engineering.

关键词： heterostructured BaTiO_(3)@TiO_(2) ferroelectric polarization interfacial interactions photocatalytic activity

ferroelectric polarization in Bi_(0.9)Dy_(0.1)FeO_(3)/g-C_(3)N_(4)Z-scheme heterojunction boosts photocatalytic hydrogen evolution

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Science China Materials 2024年第10期67卷 3160-3167页

作者： Qifu Yao Ping Liu Fei Yang Yilin Zhu Yagang Pan Hongtao Xue Weiwei Mao Liang Chu School of Science&Jiangsu Provincial Engineering Research Center of Low Dimensional Physics and New Energy Nanjing University of Posts and TelecommunicationsNanjing 210023China Institute of Carbon Neutrality and New Energy School of Electronics and InformationHangzhou Dianzi UniversityHangzhou 310018China

Delivering excellent carrier separation through ferroelectric polarization is desirable to achieve effective solar hydrogen ***,Bi_(0.9)Dy_(0.1)FeO_(3)/g-C_(3)N_(4)(BDFO/GCN)Z-scheme photocatalyst was constructed by loading BDFO nanoparticles onto sheet-like GCN,in which BiFeO_(3)(BFO)was doped with the rare-earth element Dy to narrow the optical bandgap and enhance the ferroelectric *** polarization effectively promoted the separation and transport of photo-generated carriers in BFO,and the Z-scheme exhibited stable reaction activity during photocatalytic degradation and photocatalytic hydrogen *** electric polarization,the heterojunction photocatalyst achieves 100%degradation of Rhodamine B(RhB)under simulated *** evolution rate of hydrogen was improved from approximately 742.5 to 1084.0μmol·g^(−1)·h^(−1)after *** remarkable activity is attributed to the improved carrier separation facilitated by the internal polarization *** work offers novel insights into the rational design of efficient ferroelectric photocatalysts.

关键词： Z-scheme ferroelectric polarization photocatalytic degradation hydrogen evolution

Band alignment and polarization engineering inκ-Ga_(2)O_(3)/GaN ferroelectric heterojunction

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Science China(Physics,Mechanics & Astronomy) 2022年第7期65卷 147-152页

作者： Yanting Chen Hongkai Ning Yue Kuang Xing-Xing Yu He-He Gong Xuanhu Chen Fang-Fang Ren Shulin Gu Rong Zhang Youdou Zheng Xinran Wang Jiandong Ye School of Electronic Science and Engineering Nanjing UniversityNanjing 210023China

ferroelectric-semiconductor heterostructures offer an alternative strategy to manipulate polarization towards advanced devices with engineered functionality and improved *** this work,we report on the heteroepitaxial construction,band structure alignment and polarization engineering of the single-phasedκ-Ga_(2)O_(3)/GaN ferroelectric/polar heterojunction.A type-II band alignment is determined at theκ-Ga_(2)O_(3)/GaN polar hetero-interface,with a valence band offset of(1.74±0.1)eV and a conduction band offset of(0.29■0.1)*** the band edge discontinuity,charge dipoles induced by spontaneous polarization lead to the observed band bending with built-in potentials of 0.9 and 0.33 eV,respectively,at theκ-Ga_(2)O_(3)surface andκ-Ga_(2)O_(3)/GaN *** polarization switching properties of ferroelectricκ-Ga_(2)O_(3)are identified with a remanent polarization of approximately 2.7μC/cm^(2)via the direct hysteresis remanent polarization/voltage(P-V)loop *** findings allow the rational design ofκ-Ga_(2)O_(3)ferroelectric/polar heterojunction for the application of power electronic devices,advanced memories and even ultra-low loss negative capacitance transistors.

关键词： wide-bandgap semiconductors ferroelectric polarization band alignment

Impact of Al_(x)Ga_(1-x)N barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al_(2)O_(3)/AlGaN/GaN MFSHEMTs

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Chinese Physics B 2022年第9期31卷 502-510页

作者： Yue Li Xingpeng Liu Tangyou Sun Fabi Zhang Tao Fu Peihua Wang-yang Haiou Li Yonghe Chen Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic Technology(GUET)Guilin 541004China

ferroelectric(FE)HfZrO/Al_(2)O_(3) gate stack AlGaN/GaN metal-FE-semiconductor heterostructure high-electron mo-bility transistors(MFSHEMTs)with varying Al_(x)Ga_(1-x)N barrier thickness and Al composition are investigated and com-pared by TCAD simulation with non-FE HfO_(2)/Al_(2)O_(3) gate stack metal-insulator-semiconductor heterostructure high-electron mobility transistors(MISHEMTs).Results show that the decrease of the two-dimensional electron gas(2DEG)density with decreasing AlGaN barrier thickness is more effectively suppressed in MFSHEMTs than that in MISHEMTs due to the enhanced FE polarization switching *** electrical characteristics of MFSHEMTs,including transcon-ductance,subthreshold swing,and on-state current,effectively improve with decreasing AlGaN thickness in *** Al composition in AlGaN barrier layers that are under 3-nm thickness plays a great role in enhancing the 2DEG den-sity and FE polarization in MFSHEMTs,improving the transconductance and the on-state *** subthreshold swing and threshold voltage can be reduced by decreasing the AlGaN thickness and Al composition in MFSHEMTs,affording favorable conditions for further enhancing the device.

关键词： ferroelectric polarization HfZrO ferroelectric gate HEMTs

Aberration-corrected scanning transmission electron microscopy for complex transition metal oxides

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Chinese Physics B 2016年第6期25卷 1-8页

作者：张庆华肖东东谷林 School of Materials Science and Engineering State Key Laboratory of New Ceramics and Fine Processing Tsinghua University Beijing 100084 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Collaborative Innovation Center of Quantum Matter Beijing 100190 China

Lattice,charge,orbital,and spin are the four fundamental degrees of freedom in condensed matter,of which the interactive coupling derives tremendous novel physical phenomena,such as high-temperature superconductivity（high-T_c SC） and colossal magnetoresistance（CMR） in strongly correlated electronic *** experimental observation of these freedoms is essential to understanding the structure-property relationship and the physics behind it,and also indispensable for designing new materials and *** transmission electron microscopy（STEM） integrating multiple techniques of structure imaging and spectrum analysis,is a comprehensive platform for providing structural,chemical and electronic information of materials with a high spatial *** from the development of aberration correctors,STEM has taken a big breakthrough towards sub-angstrom resolution in last decade and always steps forward to improve the capability of material characterization;many improvements have been achieved in recent years,thereby giving an indepth insight into material ***,we present a brief review of the recent advances of STEM by some representative examples of perovskite transition metal oxides;atomic-scale mapping of ferroelectric polarization,octahedral distortions and rotations,valence state,coordination and spin ordering are *** expect that this brief introduction about the current capability of STEM could facilitate the understanding of the relationship between functional properties and these fundamental degrees of freedom in complex oxides.

关键词： aberration-corrected STEM ferroelectric polarization octahedral distortion chemical bonding

ferroelectricity Induced by Oxygen Vacancies in Rhombohedral ZrO_(2) Thin Films

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Energy & Environmental Materials 2024年第1期7卷 229-237页

作者： Veniero Lenzi José P.B.Silva Břetislav Šmíd Vladimir Matoín Cosmin M.Istrate Corneliu Ghica Judith L.MacManus-Driscoll Luís Marques Physics Center of Minho and Porto Universities(CF-UM-UP) University of MinhoCampus de Gualtar 4710-057Braga Portugal Laboratory of Physics for Materials and Emergent Technologies LapMETUniversity of Minho4710-057Braga Portugal Department of Surface and Plasma Science Faculty of Mathematics and PhysicsCharles UniversityV Holešovičkách 218000Prague 8 Czech Republic National Institute of Materials Physics 105 bis Atomistilor 077125Magurele Romania Department of Materials Science and Metallurgy 27 Charles Babbage Rd.Cambridge CB3 OFSUK

Rhombohedral phase Hf_(x)Zr_(1.x)O_(2)(HZO,x from 0 to 1)films are promising for achieving robust ferroelectric polarization without the need for an initial wake-up pre-cycling,as is normally the case for the more commonly studied orthorhombic ***,a large spontaneous polarization observed in rhombohedral films is not fully understood,and there are also large discrepancies between experimental and theoretical *** this work,in rhombohedral ZrO_(2)thin films,we show that oxygen vacancies are not only a key factor for stabilizing the phase,but they are also a source of ferroelectric polarization in the *** is shown experimentally through the investigation of the structural properties,chemical composition and the ferroelectric properties of the films before and after an annealing at moderate temperature(400℃)in an oxygen environment to reduce the V_(o)concentration *** experimental work is supported by density functional theory(DFT)calculations which show that the rhombohedral phase is the most stable one in highly oxygen defective ZrO_(2)*** DFT calculations also show that V_(o)contribute to the ferroelectric *** findings reveal the importance of V_(o)for stabilizing rhombohedral ZrO_(2)thin films with superior ferroelectric properties.

关键词： charged defects ferroelectric polarization rhombohedral phase stability zirconia