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W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology

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Journal of Semiconductors 2013年第9期34卷 122-127页

作者：姚鸿飞王显泰吴旦昱苏永波曹玉雄葛霁宁晓曦金智 Institute of Microelectronics Chinese Academy of Sciences

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.

关键词： frequency doubler W-band lnP DHBT push-push

A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines

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Journal of Semiconductors 2011年第9期32卷 89-92页

作者：董军荣黄杰田超杨浩张海英 Institute of Microelectronics Chinese Academy of Sciences

A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first *** second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm *** experimental results were quite consistent with the simulated *** compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.

关键词： GaAs MMIC technology LH NLTLs frequency doubler

A 5.4mW and 6.1% efficiency fixed-tuned 214GHz frequency doubler with Schottky barrier diodes

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High Technology Letters 2015年第1期21卷 85-89页

作者：姚常飞 Zhou Ming Luo Yunsheng Kou Yanan Li Jiao Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

A Y-band frequency doubler is analyzed and designed with GaAs planar Schottky diode, which is flip-chip solded into a 50 μm thick quartz substrate. Diode embedding impedance is found by full- wave analysis with lumped port to model the nonlinear junction for impedance matching without the need of diode equivalent circuit model. All the matching circuit is designed ＂on-chip＂ and the mul- tiplier is self-biasing. To the doubler, a conversion efficiency of 6.1% and output power of 5.4mW are measured at 214GHz with input power of 88mW, and the typical measured efficiency is 4.5% in 200 - 225 GHz.

关键词： frequency doubler planar schottky diode quartz substrate efficiency

Microwave frequency doubler Design Using a Ring Resonator

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Microwave Frequency Doubler Design Using a Ring Resonator

Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs,inverters and frequency doublers

2005年海峡两岸三地无线科技学术会

作者： Yangfan Liu Quan Xue and Chi Hou Chan Wireless Communications Research Centre, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong

This paper proposes a compact, high conversion gain microwave frequency doubler structure using a ring resonator. The input and output ports are orthogonally connected to the ring resonator for fundamental frequency isolation. Therefore, this structure can eliminate the bulky output filter. On the other hand, the orthogonal ports can constructively combine both input and output second harmonic power to enhance the conversion gain. For demonstration, an S-band frequency doubler is designed and measurement results show an 8 % 3-dB gain-bandwidth with a 7 dB peak conversion gain, and over 20 dBc unwanted frequency components suppression for the whole operating band.

关键词： frequency doubler harmonic suppression ring resonator

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Science China Chemistry 2021年第8期64卷 1410-1416页

作者： Jiaxin Yang Qingqing Liu Mengxiao Hu Shang Ding Jinyu Liu Yongshuai Wang Dan Liu Haikuo Gao Wenping Hu Huanli Dong Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China School of Chemical Sciences University of Chinese Academy of SciencesBeijing100049China Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of ChemistrySchool of ScienceTianjin University&Collaborative Innovation Center of Chemical Science and EngineeringTianjin300072China

Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified fabrication *** at this point,herein,a novel asymmetric thiophene/pyridine-flanked diketopyrrolopyrrole-based copolymer(PPyTDPP-2FBT)is designed and *** to the effect of incorporating F atoms on molecular energy alignment and conjugation conformation,the PPyTDPP-2FBT copolymer exhibits typical V-shaped ambipolar field-effect transfer characteristics with well-balanced hole and electron mobilities of 0.64 and 0.46 cm^(2)V^(−1)s^(−1),***,organic digital and analog circuits such as inverters and frequency doublers are successfully constructed based on solution-processed films of the PPyTDPP-2FBT copolymers which show a typical circuit operating mode with a high gain of 133 due to the well-balanced electrical *** addition,PPyTDPP-2FBT-based devices also demonstrate good stability and batch repeatability,suggesting their great potential applications in organic integrated electronic circuits.

关键词： conjugated polymers balanced ambipolar transport property organic field effect transistor inverter frequency doubler

High Power GaN doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

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Chinese Journal of Electronics 2024年第5期33卷 1196-1203页

作者： Yazhou DONG Tianchi ZHOU Shixiong LIANG Guodong GU Hongji ZHOU Jianghua YU Hailong GUO Yaxin ZHANG School of Electronic Science and Engineering University of Electronic Science and Technology of China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute

The study focuses on the development of gallium nitride(GaN) Schottky barrier diode(SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

关键词： Couplings Schottky diodes Design methodology Schottky barriers Terahertz materials Power system harmonics Reflection Gallium nitride frequency doubler Multi-objective optimization Local non-reflection design frequency doubler RADAR

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An Ultra-wideband doubler Chain with 43–65 dBc Fundamental Rejection in Ku/K/Ka Band

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Chinese Journal of Electronics 2024年第5期33卷 1204-1217页

作者： Long WANG Jixin CHEN Debin HOU Xiaojie XU Zekun LI Dawei TANG Rui ZHOU Hao QI Yu XIANG State Key Laboratory of Millimeter Waves Southeast University MISIC Microelectronics Co.Ltd.

In this paper, a double-balanced doubler chain with >43-dBc fundamental rejection over an ultra-wide bandwidth in 0.13-μm SiGe BiCMOS technology is proposed. To achieve high fundamental rejection, high output power, and high conversion gain over an ultra-wideband, a double-balanced doubler chain with pre-and post-drivers employs a bandwidth broadening technique and a ground shielding strategy. Analysis and comparison of the singlebalanced and double-balanced doublers were conducted, with a focus on their fundamental rejection and circuit imbalance. Three doublers, including a passive single-balanced doubler, an active single-balanced doubler, and a passive double-balanced doubler were designed to verify the performance and characteristics of the single-and doublebalanced doublers. Measurements show that the proposed double-balanced doubler chain has approximately 15 dB better fundamental rejection, and more than twice the relative bandwidth compared to the single-balanced doubler chain fabricated with the same process. Over an 86.9% 3-dB bandwidth from 13.4 GHz to 34 GHz, the double-balanced doubler chain delivers 14.7-dBm peak output power and has >43-/33-dBc fundamental/third-harmonic rejection. To the authors' best knowledge, the proposed double-balanced doubler chain shows the highest fundamental rejection over an ultra-wideband among silicon-based doublers at millimeter-wave frequency bands.

关键词： Millimeter wave technology Bandwidth Harmonic analysis frequency conversion Millimeter wave communication Power generation Gain doubler Double-balanced Fundamental rejection Single-balanced frequency doubler POWER-AMPLIFIER GAIN COMPENSATION EFFICIENCY SILICON

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A High Power 320–356GHz frequency Multipliers with Schottky Diodes

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Chinese Journal of Electronics 2016年第5期25卷 986-990页

作者： YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI

A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are discussed for high multiplying efficiency. The doubler circuit is flip-chip mounted on gold electroplated oxygenfree copper film for grounding of RF and DC signals, and better thermal transportation. The whole multiplying circuit is optimized and established in Computer simulation technology(CST) suite. The highest measured multiplying efficiency is 8.0% and its output power is 5.4mW at 328 GHz. The measured typical output power is 4.0mW in 320–356GHz.

关键词： Schottky diode frequency doubler Efficiency Thermal dissipation

An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression

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Journal of Semiconductors 2022年第9期43卷 46-52页

作者： Xiaofei Liao Dixian Zhao Xiaohu You National Mobile Communication Research Laboratory Southeast UniversityNanjing 211189China Purple Mountain Laboratories Nanjing 211111China

This paper presents an E-band frequency quadrupler in 40-nm CMOS *** circuit employs two push-push frequency doublers and two single-stage neutralized *** pseudo-differential class-B biased cascode topo-logy is adopted for the frequency doubler,which improves the reverse isolation and the conversion *** tech-nique is applied to increase the stability and the power gain of the amplifiers *** stacked transformers are used for single-ended-to-differential transformation as well as output bandpass *** output bandpass filter enhances the 4th-harmonic output power,while rejecting the undesired harmonics,especially the 2nd *** core chip is 0.23 mm^(2)in size and consumes 34 *** measured 4th harmonic achieves a maximum output power of 1.7 dBm with a peak conversion gain of 3.4 dB at 76 *** fundamental and 2nd-harmonic suppressions of over 45 and 20 dB are achieved for the spectrum from 74 to 82 GHz,respectively.

关键词： capacitor neutralization CMOS E-band frequency doubler frequency quadrupler push-push