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Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

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Science Bulletin 2019年第9期64卷 570-574页

作者： Dianzhong Wu Zhijian Peng Chuanhong Jin Zhiyong Zhang School of Engineering and Technology China University of Geosciences Hunan Institute of Advanced Sensing and Information Technology Xiangtan University

Recently, two-dimensional (2D) layered semiconducting materials have been considered as promising channel materials to construct aggressively-scaled transistors owing to their excellent electrostatics and remained hig... 详细信息

关键词： BP SnO fet Effective passivation of black phosphorus transistor against ambient degradation by an ultra-thin tin oxide film

Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate fets under negative bias stress

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半导体学报:英文版 2023年第7期44卷 32-36页

作者： Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China School of Microelectronics University of Science and Technology of ChinaHefei 230026China

A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-fet)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are identified.At low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,respectively.At higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively shifted.This is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing SCR.This provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.

关键词： NiO/β-Ga_(2)O_(3)heterojunction fet NBS instability bulk traps interface dipoles

Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors

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Chinese Physics Letters 2017年第4期34卷 87-91页

作者：颜世莉谢志坚陈剑豪 Takashi Taniguchi Kenji Watanabe International Center for Quantum Materials Peking University Collaborative Innovation Center of Quantum Matter High Pressure Group National Institute for Materials Science

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not only to device physics but also to technological applications. Here we demonstrate a widely tunable bandgap of few-layer black phosphorus （BP） by the application of vertical electric field in dual-gated BP field-effect transistors. A total bandgap reduction of 124 meV is observed when the electrical displacement field is increased from 0.10 V/nm to 0.83 V/nm. Our results suggest appealing potential for few-layer BP as a tunable bandgap material in infrared optoelectronies, thermoelectric power generation and thermal imaging.

关键词： Electrically Tunable Energy Bandgap in Dual-Gated Ultra-Thin Black Phosphorus Field Effect Transistors fet BP

Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics

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Nano Research 2020年第5期13卷 1369-1375页

作者： Ming Ke Huu Duy Nguyen Hang Fan Man Li Huan Wu Yongjie Hu School of Engineering and Applied Science University of CaliforniaLos AngelesCalifornia 90095USA

Doping control has been a key challenge for electronic applications of van der Waals materials.Here,we demonstrate complementary doping of black phosphorus using controlled ionic intercalation to achieve monolithic building elements.We characterize the anisotropic electrical transport as a function of ion concentrations and report a widely tunable resistivity up to three orders of magnitude with characteristic concentration dependence corresponding to phase transitions during intercalation.As a further step,we develop both p-type and n-type field effect transistors as well as electrical diodes with high device stability and performance.In addition,enhanced charge mobility from 380 to 820 cm^2/(V·s)with the intercalation process is observed and explained as the suppressed neutral impurity scattering based on our ab initio calculations.Our study provides a unique approach to atomically control the electrical properties of van der Waals materials,and may open up new opportunities in developing advanced electronics and physics platforms.

关键词： nanoelectronics two-dimensional(2D)materials and heterostructures fet diode tunable properties black phosphorus

Innovative Teaching Approach Based on Finite Element Technique in Material Mechanics for Vocational Education

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Journal of Contemporary Educational Research 2023年第8期7卷 18-23页

作者： Xuesong Zhen Fei Peng Shuo Zhang School of Automotive Engineering Beijing PolytechnicBeijing 100176China

This paper proposed an innovative teaching approach based on finite element technique(fet)to improve the understanding of material mechanics.A teaching experiment was conducted using pure bending deformation of a beam as an example,and the deformation and stress distribution of the beam were analyzed using fet.The results showed that using color stress nephograms and color U nephograms can improve students’learning outcomes in mechanics classroom.The high levels of satisfaction and interest in incorporating new techniques into the classroom suggest that there is a need to explore and develop innovative teaching methods in mechanics and related fields.This approach may inspire educators to develop more effective ways of teaching material mechanics,and our research can contribute to the advancement of mechanics education.

关键词： Material mechanics Finite element technique fet Teaching Vocational education

Interface Properties of InAs／AlSb Superlattices Characterized by Grazing Incidence X-Ray Reflectivity

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Chinese Physics Letters 2005年第7期22卷 1729-1731页

作者：李志华郭丽伟吴曙东王文新黄绮周均铭 InstituteofPhysics ChineseAcademyofSciencesBeijing100080

Two kinds of superlattice interfaces of InAs/AlSb superlattices are realized in an optimized interface growth process, where one is AlAs-like and the other is InSb-like grown on a relaxed AlSb buffer layer. The superlattice properties such as interface roughness and layer thickness are studied by grazing incidence x-ray reflectivity. The reflectivity curves are simulated by standard software till the simulation curves match well with the experimental curves. The simulation indicates that AlAs-like interfaces are much rougher than InSb-like interfaces. Grazing incidence x-ray reflectivity is also discussed as a powerful tool to assessing the structure properties of superlattices.

关键词： fet IF QW

A novel tunnel fet design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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Science China(Information Sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room temperature.Tunnel fet (Tfet) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel fet design through hybrid modulation with optimized subthreshold characteristics and high drive capability fet