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28-nm UTBB fd-soi vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part II

Circuits and Systems 2017年第5期8卷 111-121页

作者： Ali Mohsen Adnan Harb Nathalie Deltimple Abraham Serhane Department of Electrical and Electronics Engineering Lebanese International University Beirut Lebanon IMS Laboratory University of Bordeaux Talence Cedex France Department of Industrial Engineering Lebanese International University Beirut Lebanon

This is Part II of a two-part paper that explores the 28-nm UTBB fd-soi CMOS and the 22-nm Tri-Gate FinFET technology as the better alternatives to bulk transistors especially when the transistor’s architecture is going fully depleted and its size is becoming much smaller, 28-nm and above. Reliability tests of those alternatives are first discussed. Then, a comparison is made between the two alternative transistors comparing their physical properties, electrical properties, and their preferences in different applications.

关键词： UTBB fd-soi: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator Tri-Gate FinFET DIBL: Drain Induced Barrier Lowering

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28-nm UTBB fd-soi vs. 22-nm Tri-Gate FinFET Review: A Designer Guide—Part I

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Circuits and Systems 2017年第4期8卷 93-110页

作者： Ali Mohsen Adnan Harb Nathalie Deltimple Abraham Serhane Department of Electrical and Electronics Engineering Lebanese International University Beirut Lebanon IMS Laboratory University of Bordeaux Talence cedex France Department of Industrial Engineering Lebanese International University Beirut Lebanon

Nowadays, transistor technology is going toward the fully depleted architecture;the bulk transistors are becoming more complex in manufacturing as the transistor size is becoming smaller to achieve the high performance especially at the node 28 nm. This is the first of two papers that discuss the basic drawbacks of the bulk transistors and explain the two alternative transistors: 28 nm UTBB fd-soi CMOS and the 22 nm Tri-Gate FinFET. The accompanying paper, Part II, focuses on the comparison between those alternatives and their physical properties, electrical properties, and reliability tests to properly set the preferences when choosing for different mobile media and consumers’ applications.

关键词： UTBB fd-soi: Ultra-Thin Body and Box Fully Depleted Silicon on Insulator Tri-Gate FinFET DIBL: Drain Induced Barrier Lowering

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