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epitaxial growth triggered core-shell Pd@RuP nanorods for high-efficiency electrocatalytic hydrogen evolution

Journal of Energy Chemistry 2023年第11期86卷 510-517,I0011页

作者： Jiaqian Ding Xian Jiang Caikang Wang Zhuoya Zhu Chang Xu Yi Zhou Xuan Wang Qicheng Liu Zhenyuan Liu Yawen Tang Jun Lin Gengtao Fu Jiangsu Key Laboratory of New Power Batteries Jiangsu Collaborative Innovation Center of Biomedical Functional MaterialsSchool of Chemistry and Materials ScienceNanjing Normal UniversityNanjing 210023JiangsuChina School of New Energy Nanjing University of Science and TechnologyJiangyin 214443JiangsuChina School of Materials Science and Engineering Jiangsu University of Science and TechnologyZhenjiang 212100JiangsuChina

Ru with Pt-like hydrogen bond strength,knockdown cost(~1/3 of Pt),and eximious stability is a competitive replacement for Pt-based catalysts towards the hydrogen evolution reaction(HER)in water *** design of Ru-based catalysts via interface construction,crystal phase control,and specific light element doping to realize the impressive promotion of limited activity and stability remains ***,we report the fabrication of Pd@RuP core-shell nanorods(NRs)via an epitaxial growth method,where ultrathin RuP shells extend the face-centered cubic(fcc)crystal structure and(111)plane of the Pd NRs *** functio nal theory results confirm that the core-s hell interface engineering and P doping synergistically accelerate electron transfer and moderate the d-band center to generate a suitable affinity for H*,thus optimizing HER *** with Pd@Ru NRs and Pt/C,the Pd@RuP NRs exhibit preferable electrocatalytic stability and superior activity with a low overpotential of 18 mV at 10 mA cm-2in the alkaline HER ***,the integrated Pd@RuP//RuO2-based electrolyzer also displays a low operation potential of 1.42 V to acquire 10 mA cm-2,demonstrating great potential for practical water *** work presents an efficient avenue to design Ru-based electrocatalysts via epitaxial growth for extraordinary HER performance.

关键词： Pd@RuP epitaxial growth Interface engineering Hydrogen evolution Electrocatalyst

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epitaxial growth of large area ZrS_(2)2D semiconductor films on sapphire for optoelectronics

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Nano Research 2022年第7期15卷 6628-6635页

作者： Yan Tian Yong Cheng Jidong Huang Siyu Zhang Hao Dong Gaokai Wang Jingren Chen Jinliang Wu Zhigang Yin Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

Recently,group-IVB semiconducting transition metal dichalcogenides(TMDs)of ZrS_(2) have attracted significant research interest due to its layered nature,moderate band gap,and extraordinary physical *** device applications require a deposition of high quality large-area uniform ZrS_(2) single crystalline films,which has not yet been *** this work,for the first time,we demonstrate the epitaxial growth of high quality large-area uniform ZrS_(2) films on c-plane sapphire substrates by chemical vapor *** atomically sharp interface is observed due to the supercell matching between ZrS_(2) and sapphire,and their epitaxial relationship is found to be ZrS_(2)(0001)[1010]||Al_(2)O_(3)(0001)[1120].The epitaxial ZrS_(2) film exhibits n-type semiconductor behavior with a room temperature mobility of 2.4 cm^(2)·V^(−1)·s^(−1),and the optical phonon is the dominant scattering mechanism at room temperature or ***,the optoelectronic applications of ZrS_(2) films are demonstrated by fabricating photodetector *** ZrS_(2) photodetectors exhibit the excellent comprehensive performance,such as a light on/off ratio of 106 and a specific detectivity of 2.6×10^(12) Jones,which are the highest values compared with the photodetectors based on other group-IVB two-dimensional TMDs.

关键词： ZrS_(2) epitaxial growth scattering mechanism photodetectors transition metal dichalcogenides

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epitaxial growth of antimony nanofilms on HOPG and thermal desorption to control the film thickness

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Chinese Physics B 2020年第9期29卷 164-171页

作者： Shuya Xing Le Lei Haoyu Dong Jianfeng Guo Feiyue Cao Shangzhi Gu Sabir Hussain Fei Pang Wei Ji Rui Xu Zhihai Cheng Beijing Key Laboratory of Optoelectronic Functional Materials&Micro-nano Devices Department of PhysicsRenmin University of ChinaBeijing 100872China CAS Key Laboratory of Standardization and Measurement for Nanotechnology CAS Center for Excellence in NanoscienceNational Center for Nanoscience and TechnologyBeijing 100190China University of Chinese Academy of Sciences Beijing 100039China

Group-V elemental nanofilms were predicted to exhibit interesting physical properties such as nontrivial topological properties due to their strong spin-orbit coupling,the quantum confinement,and surface *** was reported that the ultrathin Sb nanofilms can undergo a series of topological transitions as a function of the film thickness h:from a topological semimetal(h>7.8 nm)to a topological insulator(7.8 nm>h>2.7 nm),then a quantum spin Hall(QSH)phase(2.7 nm>h>1.0 nm)and a topological trivial semiconductor(hepitaxial growth of Sb nanofilms on highly oriented pyrolytic graphite(HOPG)substrate and the controllable thermal desorption to achieve their specific *** morphology,thickness,atomic structure,and thermal-strain effect of the Sb nanofilms were characterized by a combination study of scanning electron microscopy(SEM),atomic force microscopy(AFM),and scanning tunneling microscopy(STM).The realization of Sb nanofilms with specific thickness paves the way for the further exploring their thickness-dependent topological phase transitions and exotic physical properties.

关键词： epitaxial growth antimony films scanning tunneling microscope(STM) thermal desorption

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epitaxial growth of CsPbBr_(3)-PbS vertical and lateral heterostructures for visible to infrared broadband photodetection

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Nano Research 2021年第11期14卷 3879-3885页

作者： Qingbo Liu Lihan Liang Hongzhi Shen Dehui Li Hong Zhou School of Physics and Electronics Hunan UniversityChangsha410082China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan430074China

Owing to their excellent optoelectronic properties, halide perovskite is very promising for photodetectors and other optoelectronic devices. Perovskite heterostructures are considered to be the key components for these devices. However, it is challenging to rationally synthesize those heterostructures. Here, we demonstrate that perovskite can be epitaxially grown on PbS by vapor transport, thereby creating an interesting CsPbBr_(3)-PbS heterostructure. Remarkably, photodetectors based on CsPbBr_(3)-PbS heterostructures exhibit visible to infrared broadband response with room temperature operation up to 2 μm. The room temperature detectivity higher than 1.0 × 10^(9) Jones was obtained in the 1.8- to 2-μm range. Furthermore, the p-n heterojunction exhibits a clear rectifying characteristic and enables detector to operate at zero-bias. Our study provides fundamentally contributes to establish the epitaxial growth perovskite heterostructures and demonstrate a materials platform for efficient perovskite-based optoelectronic devices.

关键词： perovskites PbS heterostructure epitaxial growth short-wavelength infrared

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epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer

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Nano Research 2017年第8期10卷 2732-2742页

作者： Fangfang Cui Xiaobo Li Qingliang Feng Jianbo Yin Lin Zhou Dongyan Liu Kaiqiang Liu Xuexia He Xing Liang Shengzhong Liu Zhibin Lei Zonghuai Liu Hailin Peng Jin Zhang Jing Kong Hua Xu Key Laboratory of Applied Surface and Colloid Chemistry Ministry of Education Shaanxi Key Laboratory for Advanced Energy Devices Shaanxi Engineering Lab for Advanced Energy Technology School of Materials Science and Engineering Shaanxi Normal University Xi'an 710119 China Center for Nanochemistry Beijing National Laboratory for Molecular Sciences Key Laboratory for the Physics and Chemistry of Nanodevices College of Chemistry and Molecular Engineering Peking University Beijing 100871 China Department of Electrical Engineering and Computer Sciences Massachusetts Institute of Technology Cambridge MA 02139 USA School of Chemistry and Chemical Engineering Shaanxi Normal University Xi' an 710119 China

The anisotropic two-dimensional （2D） layered material rhenium disulfide （ReSe2） has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, because of its low lattice symmetry and interlayer decoupling, anisotropic growth and out-of-plane growth occur easily, yielding thick flakes, dendritic structure, or flower-like structure. In this stud34 we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy. To achieve controllable growth, a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system. Within the confined reaction space, the nucleation density and growth rate of ReSe2 were significantly reduced, favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness. The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature （〈600 ℃）. Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 10s and a hole carrier mobility of 0.98 cm^2/（V·s）. Furthermore, the ReSe2 device exhibited an outstanding photoresponse to near-infrared light, with responsivity up to 8.4 and 5.1 A/W for 850- and 940-nm light, respectively. This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.

关键词： rhenium diselenide (ReSe2) epitaxial growth high crystal quality anisotropy optoelectronics

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epitaxial growth of trilayer graphene moiré superlattice

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Chinese Physics B 2023年第7期32卷 510-514页

作者：袁亚龙褚衍邦胡成田金朋刘乐吴帆帆季怡汝赵交交黄智恒昝晓洲杜罗军 Kenji Watanabe Takashi Taniguchi 时东霞史志文杨威张广宇 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences(CAS)Beijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education) School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Songshan Lake Materials Laboratory Dongguan 523808China

The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene(TLG) moiré superlattice on hexagonal boron nitride(h BN) by a remote plasma-enhanced chemical vapor deposition method. The as-grown TLG/h BN shows a uniform moiré pattern with a period of ~ 15 nm by atomic force microscopy(AFM) imaging, which agrees with the lattice mismatch between graphene and h BN. By fabricating the device with both top and bottom gates, we observed a gate-tunable bandgap at charge neutral point(CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron–electron correlation in our grown TLG/h BN superlattice. In addition, we observed quantum Hall states at Landau level filling factors ν = 6, 10, 14,..., indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.

关键词： epitaxial growth ABC-TLG/hBN moirésuperlattice electron correlations

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epitaxial growth on 4H-SiC by TCS as a silicon precursor

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Journal of Semiconductors 2009年第9期30卷 21-25页

作者：纪刚孙国胜刘兴昉王雷赵万顺曾一平李晋闽 Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences

epitaxial growth on n-type 4H-SiC 8° off-oriented substrates with a size of 10 × 10 mm^2 at different temperatures with various gas flow rates has been performed in a horizontal hot wall CVD reactor, using trichlorosilane （TCS） as a silicon precursor source together with ethylene as a carbon precursor source. The growth rate reached 23 μm/h and the optimal epilayer was obtained at 1600℃ with a TCS flow rate of 12 sccm in C/Si of 0.42, which has a good surface morphology with a low RMS of 0.64 nm in an area of 10 x 10 pm2. The homoepitaxial layer was obtained at 1500℃ with low growth rate （〈 5 μm/h） and the 3C-SiC epilayers were obtained at 1650 ℃ with a growth rate of 60-70 μm/h. It is estimated that the structural properties of the epilayers have a relationship with the growth temperature and growth rate. Silicon droplets with different sizes are observed on the surface of the homoepitaxial layer in a low C/Si ratio of 0.32.

关键词： 4H-SiC TCS epitaxial growth growth rate

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epitaxial growth and characterization of Gd_2O_3-doped HfO_2 film on Ge(001) substrates with zero interface layer

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Journal of Rare Earths 2013年第11期31卷 1092-1095页

作者：张心强屠海令魏峰熊玉华杨萌萌赵洪滨杜军王文武 Advanced Electronic Materials Institute General Research Institute for Nonferrous Metals National Engineering Research Center for Semiconductor Materials General Research Institute for Nonferrous Metals Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The GHO （Gd2O3-doped HfO2） films were epitaxially grown on Ge （001） substrates adopting cube-on-cube mode with zero interface layer using pulsed laser deposition （PLD）. Reflection high-energy electron diffraction （RHEED） and high-resolution transmission electron microscopy （HRTEM） observation revealed a sharp interface of GHO/Ge and orientation relationship corre-sponding to （001）GHO//（001）Ge and [011] GHO//[011]Ge. The band offset for GHO/Ge stack was evaluated to be 3.92 eV for va-lence band and 1.38 eV for conduction band by X-ray photoelectron spectrum. Small equivalent oxide thickness （0.49 nm） and inter-face state density （7×1011 cm-2） were achieved from Au/Ti/GHO/Ge/Al capacitors.

关键词： dielectric material epitaxial growth interface Gd203 HfO2 rare earths

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epitaxial growth of hyperbranched Cu/Cu2O/CuO coreshell nanowire heterostructures for lithium-ion batteries

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Nano Research 2015年第8期8卷 2763-2776页

作者： Yuxin Zhao Ying Zhang Hu Zhao Xuejin Li Yanpeng Li Ling wen Zifeng Yan Ziyang Huo State Key Laboratory for Heavy Oil Processing PetroChina Key Laboratory of Catalysis China University of Petroleum Qingdao 266580 China SINOPEC Safety Engineering Institute No 218 Yan'an 3 Road Shinan District Qingdao 266071 China China Petroleum Pipeline Bureau 87 Guangyang Road Langfang 065000 China Queensland Micro- and Nanotechnology Centre Nathan Campus Griffith University 170 Kessels Road NATHAN QLD 4111 Australia

The careful design of nano-architectures and smart hybridization of expected active materials can lead to more advanced properties. Here we have engineered a novel hierarchical branching Cu/Cu2O/CuO heteronanostructure by combining a facile hydrothermal method and subsequent controlled oxidation process. The fine structure and epitaxial relationship between the branches and backbone are investigated by high-resolution transmission electron microscopy. Moreover, the evolution of the branch growth has also been observed during the gradual oxidation of the Cu nanowire surface. The experimental results suggest that the surface oxidation needs to be performed via a two-step exposure process to varying humidity in order to achieve optimized formation of a core-shell structured branching architecture. Finally, a proof-of-concept of the function of such a hierarchical framework as the anode material in lithium-ion batteries is demonstrated. The branching core-shell heterostructure improves battery performance by several means：（i） The epitaxially grown branches provide a high surface area for enhanced electrolyte accessibility and high resistance to volume change induced by Li^＋ intercalation/extraction; （ii） the core-shell structure with its well-defined heterojunction increases the contact area which facilitates effective charge transport during lithiation; （iii） the copper core acts as a current collector as well as providing structural reinforcement.

关键词： nanowires copper oxides epitaxial growth heterostructure lithium-ion battery

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epitaxial growth and cracking of highly tough 7YSZ splats by thermal spray technology

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Journal of Advanced Ceramics 2018年第1期7卷 17-29页

作者： Lin CHEN Guan-Jun YANG State Key Laboratory for Mechanical Behavior of Materials School of Materials Science and Engineering Xi'an Jiaotong University

Thermally sprayed coatings are essentially layered materials and contain large numbers of lamellar pores. It is thus quite necessary to clarify the formation mechanism of lamellar pores which significantly influence coating performances. In the present study, to elaborate the formation mechanism of lamellar pores, the yttria-stabilized zirconia(ZrO_2–7 wt% Y_2O_3, 7YSZ) splats, which have high fracture toughness and tetragonal phase stability, were employed. Interestingly, anomalous epitaxial growth occurred for all deposition temperatures in spite of the extremely high cooling rate,which clearly indicated chemical bonding and complete contact at splat/substrate interface before splat cooling. However, transverse spallation substantially occurred for all deposition temperatures in spite of the high fracture toughness of 7YSZ, which revealed that the lamellar pores were from transverse cracking/spallation due to the large stress during splat cooling. Additionally, fracture mechanics analysis was carried out, and it was found that the stress arose from the constraint effect of the shrinkage of the splat by locally heated substrate with the value about 1.97 GPa. This clearly demonstrated that the stress was indeed large enough to drive transverse cracking/spallation forming lamellar pores during splat cooling. All of these contribute to understanding the essential features of lamellar bonding and further tailoring the coating structures and performance.

关键词： epitaxial growth crack patterns transverse cracking/spallation stress locally heated substrate

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