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CuInSe2 Films Prepared by a Plasma-Assisted Selenization Process in Different Working Pressures

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Chinese Physics Letters 2010年第2期27卷 292-294页

作者：于涛张毅李宝璋姜伟龙王赫蔡永安刘玮李凤岩孙云 Institute of Photo-electronic Thin Film devices and Technology and the Tianjin Key Laboratory for Photoelectronic Thin Film Devices and Technology Nankai University Tianjin 300071

The effects of working pressure on the composition, structure and surface morphology properties of CuInSe2 （CIS） films selenized with a plasma-assisted selenization process is investigated. Higher selenium content, better crystalline quality and much more regular surface particles compared to the others are found in the CIS film with 40 Pa working pressure. A Cu（In,Ga）Se2 device fabricated with the optimized plasma-assisted selenization process is demonstrated to be better than our previous result. After discussion, the reason for these phenomena is attributed to the compromise of electron temperature and plasma density.

关键词： electronics and devices semiconductors surfaces interfaces and thin films Plasma physics Condensed matter: structural mechanical & thermal

Influences of Interface States on Resistive Switching Properties of TiOx with Different Electrodes

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Chinese Physics Letters 2010年第11期27卷 194-197页

作者：贾泽王林凯任天令 Institute of Microelectronics Tsinghua National Laboratory for Information Science and Technology Tsinghua University Beijing 100084

Different TiOx thin films prepared by graded or sufficient oxidization of Ti are applied with Pt or Ag electrode in metal？insulator-metal （MIM） structures for studying the properties and mechanisms of resistive switching. The differences on the mobile oxygen vacancies in TiOx films and different work functions of the electrode films result in different insulator-metal interface states, which are displayed as ohmic-like or non-ohmic contact. Based on the interface states, the electrical models for MIM devices are analyzed and extracted. The electrode-limited effect and the bulk-limited effect can be unified to explain the mechanisms for resistive switching behavior as the dominant effect respectively in various conditions. All the current-voltage curves of the four kinds of specimens measured in the experiments can be explained and proved in accordance with the theory.

关键词： electronics and devices semiconductors surfaces interfaces and thin films Condensed matter: structural mechanical & thermal Chemical physics and physical chemistry

Electrical Property of Infrared-Sensitive InAs Solar Cells

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Chinese Physics Letters 2010年第11期27卷 95-98页

作者：邓惠勇王奇伟陶俊超吴杰胡淑红陈鑫戴宁 National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of SciencesShanghai 200083

InAs infrared-sensitive solar cells are fabricated by using the films grown by the liquid phase epitaxy technique. The film microstructures are characterized by x-ray diffraction and scanning electronic microscopy. The current-voltage characteristics of the solar cells in the dark and under AM1.5 illumination at 300 K and 77 K are discussed. The conversion efficiency of p-InAs/n-sub InAs cells decreases when the thickness of the p-type film changes from 1.7 μm to 3.5 μm, which is caused by the reduced effective photons near p？n junction. The p-InAs/n-InAs/n-sub InAs solar cell with the conversion efficiency of 7.43% in 1-2.5 μm under AM1.5 at 77 K is obtained. The short circuit current density increases dramatically with decreasing temperature due to the weakened effect of phonon scattering.

关键词： electronics and devices semiconductors surfaces interfaces and thin films

InAlAs/InGaAs Pseudomorphic High Eelectron Mobility Transistors Grown by Molecular Beam Epitaxy on the InP Substrate

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Chinese Physics Letters 2010年第11期27卷 191-193页

作者：黄杰郭天义张海英徐静波付晓君杨浩牛沽斌 Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 School of Physical Science and Technology Southwest University Chongqing 400715

A novel PMMA/PMGI/ZEP520 trilayer resist electron beam lithograph （EBL） technology is successfully developed and used to fabricate the 150 nm gate-length In0.7Ga0.3As/In0.52Al0.48As Pseudomorphic HEMT on an InP substrate, of which the material structure is successfully designed and optimized. A perfect profile of T？gate is successfully obtained. These fabricated devices demonstrate excellent dc and rf characteristics： the transconductance Gm, maximum saturation drain？to-source current IDSS, threshold voltage VT, maximum current gain frequency fT derived from h21, maximum frequency of oscillation derived from maximum available power gain/maximum stable gain and from unilateral power？gain of metamorphic InGaAs/InAlAs high electron mobility transistors （HEMTs） are 470 mS/mm, 560 mA/mm, -1.0 V, 76 GHz, 135 GHz and 436 GHz, respectively. The excellent high frequency performances promise the possibility of metamorphic HEMTs for millimeter-wave applications.

关键词： electronics and devices semiconductors surfaces interfaces and thin films

Electrical Characteristics of High-Performance ZnO Field-Effect Transistors Prepared by Ultrasonic Spray Pyrolysis Technique

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Chinese Physics Letters 2011年第1期28卷 179-181页

作者： YI Ming-Dong XIE Ling-Hai LIU Yu-Yu DAI Yan-Eeng HUANG Jin-Ying Key Laboratory for Organic electronics & Information Displays and Institute of Advanced Materials Nanjing University of Posts and Telecommunications Nanjing 210046 State Key Laboratory of Polymer Physics and Chemistry Changchun Institute of Applied Chemistry Graduate School of the Chinese Academy of Sciences Chinese Academy of Sciences Changchun 130022

We have fabricated ZnO-based thin-film transistors （TFTs） by low-cost ultrasonic spray pyrolysis. The devices exhibit high saturation mobility of about 0. 6 cm2 /Vs and on-off current ratio of 10^5. The electrical characteristics of ZnO-based TFTs show that ultrasonic spray pyrolysis technique can be used as a promising approach to attain high-performance electronic devices. Furthermore, the deposition techniques make the operating process attractive for flexible electronics.

关键词： electronics and devices semiconductors surfaces interfaces and thin films

Memory Effect of Metal-Oxide-Silicon Capacitors with Self-Assembly Double-Layer Au Nanocrystals Embedded in Atomic-Layer-Deposited HfO2 Dielectric

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Chinese Physics Letters 2009年第10期26卷 200-202页

作者：黄玥苟鸿雁孙清清丁士进张卫张世理 State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 School of Information and Communication KTH Royal Institute of Technology Electrum 229 SE-164 40 Kista Sweden

We report the chemical self-assembly growth of Au nanocrystals on atomic-layer-deposited HfO2 films aminosilanized by （3-Aminopropyl）-trimethoxysilane aforehand for memory applications. The resulting Au nanocrystals show a density of about 4 × 10^11 cm^-2 and a diameter range of 5-8nm. The metal-oxide-silicon capacitor with double-layer Au nanocrystals embedded in HfO2 dielectric exhibits a large C - V hysteresis window of 11.9 V for ±11 V gate voltage sweeps at 1MHz, a flat-band voltage shift of 1.5 V after the electrical stress under 7 V for 1ms, a leakage current density of 2.9 × 10^-8 A/cm^-2 at 9 V and room temperature. Compared to single-layer Au nanocrystals, the double-layer Au nanocrystals increase the hysteresis window significantly, and the underlying mechanism is thus discussed.

关键词： electronics and devices semiconductors surfaces interfaces and thin films Nanoscale science and low-D systems

High-Current Multi-Finger Mesa InGaAs/InP DHBTs

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Chinese Physics Letters 2009年第12期26卷 247-249页

作者：金智程伟苏永波刘新宇徐安怀齐鸣 Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 State Key Laboratory of Functional Materials for Information Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050

Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors （DHBTs） are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.

关键词： electronics and devices semiconductors surfaces interfaces and thin films