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Emergent phenomena in manganites under spatial confinement

Chinese Physics B 2013年第1期22卷 1-11页

作者：沈健 T.Z.Ward L.F.Yin State Key Laboratory of Surface Physics and Department of Physics Fudan University Department of Physics and Astronomy The University of Tennessee Materials Science and Technology Division Oak Ridge National Laboratory

It is becoming increasingly clear that the exotic properties displayed by correlated electronic materials such as high- Tc superconductivity in cuprates, colossal magnetoresistance （CMR） in manganites, and heavy-fermion compounds are intimately related to the coexistence of competing nearly degenerate states which couple simultaneously active degrees of freedom---charge, lattice, orbital, and spin states. The striking phenomena associated with these materials are due in a large part to spatial electronic inhomogeneities, or electronic phase separation （EPS）. In many of these hard materials, the functionality is a result of the soft electronic component that leads to self-organization. In this paper, we review our recent work on a novel spatial confinement technique that has led to some fascinating new discoveries about the role of EPS in manganites. Using lithographic techniques to confine manganite thin films to length scales of the EPS domains that reside within them, it is possible to simultaneously probe EPS domains with different electronic states. This method allows for a much more complete view of the phases residing in a material and gives vital information on phase formation, movement, and fluctuation. Pushing this trend to its limit, we propose to control the formation process of the EPS using external local fields, which include magnetic exchange field, strain field, and electric field. We term the ability to pattern EPS ＂electronic nanofabrication.＂ This method allows us to control the global physical properties of the system at a very fundamental level, and greatly enhances the potential for realizing true oxide electronics.

关键词： manganites metal-insulator transition electrical transport electronic phase separation

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Direct visualization of percolating metal-insulator transition in V_(2)O_(3) using scanning microwave impedance microscopy

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Science China(Physics,Mechanics & Astronomy) 2022年第9期65卷 112-118页

作者： Weiyan Lin Huanyu Zhang Yoav Kalcheim Xinchen Zhou Fubao Yang Yang Shi Yang Feng Yihua Wang Jiping Huang Ivan KSchuller Xiaodong Zhou Jian Shen State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Department of Physics Fudan UniversityShanghai 200433China Department of Physics University of California San DiegoLa Jolla 92093USA Center for Advanced Nanoscience University of California San DiegoLa Jolla 92093USA Key Laboratory of Micro and Nano Photonic Structures(MOE) Fudan UniversityShanghai 200433China Beijing Academy of Quantum Information Science Beijing 100193China Shanghai Research Center for Quantum Sciences Shanghai 200433China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China Shanghai Qi Zhi Institute Shanghai 200232China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201203China

Using the extensively studied V_(2)O_(3) as a prototype system, we investigate the role of percolation in metal-insulator transition(MIT). We apply scanning microwave impedance microscopy to directly determine the metallic phase fraction p and relate it to the macroscopic conductance G, which shows a sudden jump when p reaches the percolation threshold. Interestingly, the conductance G exhibits a hysteretic behavior against p, suggesting two different percolating processes upon cooling and warming. Based on our image analysis and model simulation, we ascribe such hysteretic behavior to different domain nucleation and growth processes between cooling and warming, which is likely caused by the decoupled structural and electronic transitions in V_(2)O_(3) during MIT. Our work provides a microscopic view of how the interplay of structural and electronic degrees of freedom affects MIT in strongly correlated systems.

关键词： electronic phase separation metal-insulator transition percolation theory scanning microwave impedance microscopy

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Polarization-dependent photoinduced metal–insulator transitions in manganites

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Science Bulletin 2024年第2期69卷 183-189页

作者： Lina Deng Weiye Zhang Hanxuan Lin Lifen Xiang Ying Xu Yadi Wang Qiang Li Yinyan Zhu Xiaodong Zhou Wenbin Wang Lifeng Yin Hangwen Guo Chuanshan Tian Jian Shen State Key Laboratory of Surface Physics Institute for Nanoelectronic Devices and Quantum Computingand Department of PhysicsFudan UniversityShanghai 200433China Shanghai Research Center for Quantum Sciences Shanghai 201315China Zhangjiang Fudan International Innovation Center Fudan UniversityShanghai 201210China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China Shanghai Branch CAS Center for Excellence and Synergetic Innovation Center in Quantum Information and Quantum PhysicsShanghai 201315China

In correlated oxides,collaborative manipulation on light intensity,wavelength,pulse duration and polarization has yielded many exotic discoveries,such as phase transitions and novel quantum *** view of potential optoelectronic applications,tailoring long-lived static properties by light-induced effects is highly *** far,the polarization state of light has rarely been reported as a control parameter for this ***,we report polarization-dependent metal-to-insulator transition(MIT)in phaseseparated manganite thin films,introducing a new degree of freedom to control static ***,we observed giant photoinduced resistance jumps with striking features:(1)a single resistance jump occurs upon a linearly polarized light incident with a chosen polarization angle,and a second resistance jump occurs when the polarization angle changes;(2)the amplitude of the second resistance jump depends sensitively on the actual change of the polarization *** transmittance measurements reveal that the origin of the above phenomena is closely related to the coexistence of anisotropic *** results represent a first step to utilize light polarization as an active knob to manipulate static phase transitions,pointing towards new pathways for nonvolatile optoelectronic devices and sensors.

关键词： Metal-insulator phase transitions Polarization of light electronic phase separation Selective domain controllability

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Critical fluctuations upon photoinduced phase transition in manganite strips

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Science China(Physics,Mechanics & Astronomy) 2018年第9期61卷 86-90页

作者： HanXuan Lin Tian Miao Qian Shi Yang Yu Hao Liu Kai Zhang WenBin Wang LiFeng Yin Jian Shen State Key Laboratory of Surface Physics and Department of Physics Fudan University Advanced Materials Laboratory Fudan University Collaborative Innovation Center of Advanced Microstructures Fudan University

Light,acting as an external stimulus to induce various intriguing phenomena ranging from photovoltaics to photoinduced catalysis,exerts prominent effects in strongly correlated *** would be of particular interest to investigate photon-induced emerging phenomena in spatially confined strongly correlated systems,which are important for applications of these materials in future electronic *** magnetoresistive manganites materials offer an ideal platform for such study due to their sensitivity to ***,we fabricated 900 nm wide La_(0.325)Pr_(0.3)Ca_(0.375)Mn O_3strips,whose width is comparable to the size of the electronic phase separation(EPS)domains in this *** observed the photoinduced critical fluctuations in the strips,where abrupt resistivity jumps occurred upon photoinduced phase transition depending sensitively on the light *** on the microscopic views of the EPS domains under photoexcitation,we conclude that such photo-induced resistivity fluctuations originate from the photoinduced phase fluctuations of individual EPS domains when their size becomes comparable to the strip width.

关键词： photo-induced phase transition resistivity critical fluctuation electronic phase separation magnetic force microscope manganite strip optolithorgraphy

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