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A Discrete Multi‑Objective Artificial Bee Colony Algorithm for a Real‑World electronic device Testing Machine Allocation Problem

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Chinese Journal of Mechanical Engineering 2022年第6期35卷 136-150页

作者： Jin Xie Xinyu Li Liang Gao State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China

With the continuous development of science and technology,electronic devices have begun to enter all aspects of human life,becoming increasingly closely related to human *** have higher quality requirements for electronic *** device testing has gradually become an irreplaceable engineering process in modern manufacturing enterprises to guarantee the quality of products while preventing inferior products from entering the *** the large output of electronic devices,improving the testing efficiency while reducing the testing cost has become an urgent problem to be *** study investigates the electronic device testing machine allocation problem(EDTMAP),aiming to improve the production of electronic devices and reduce the scheduling distance among testing machines through reasonable machine ***,a mathematical model was formulated for the EDTMAP to maximize both production and the scheduling distance among testing ***,we developed a discrete multi-objective artificial bee colony(DMOABC)algorithm to solve EDTMAP.A crossover operator and local search operator were designed to improve the exploration and exploitation of the algorithm,*** experiments were conducted to evaluate the performance of the proposed *** experimental results demonstrate the superiority of the proposed algorithm compared with the non-dominated sorting genetic algorithm II(NSGA-II)and strength Pareto evolutionary algorithm 2(SPEA2).Finally,the mathematical model and DMOABC algorithm were applied to a real-world factory that tests radio-frequency *** results verify that our method can significantly improve production and reduce the scheduling distance among testing machines.

关键词： electronic device Machine allocation Multi-objective optimization Artificial bee colony algorithm

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Graphene applications in electronic and optoelectronic devices and circuits

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Chinese Physics B 2013年第9期22卷 101-110页

作者：吴华强令狐昌洋吕宏鸣钱鹤 Institute of Microelectronics Tsinghua University Tsinghua National Laboratory for Information Science and Technology (TNList)

Recent progress of research for graphene applications in electronic and optoelectronic devices is reviewed, and recent developments in circuits based on graphene devices are summarized. The bandgap-mobility tradeoff inevitably constrains the application of graphene for the conventional field-effect transistor （FET） devices in digital applications. However, this shortcoming has not dampened the enthusiasm of the research community toward graphene electronics. Aside from high mobility, graphene offers numerous other amazing electrical, optical, thermal, and mechanical properties that continually motivate innovations.

关键词： graphene electronic device optoelectronic device circuit

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Experimental Research of electronic devices Thermal Control Using Metallic Phase Change Materials

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Journal of Harbin Institute of Technology(New Series) 2014年第2期21卷 113-121页

作者： Ai-Gang Pan Jun-Biao Wang Xian-Jie Zhang Xiao-Bao Cao Shaanxi Engineering Research Center of Digital Manufacturing Technology Northwestern Polytechnical University

A Phase-change thermal control unit( PTCU) filled with metallic phase change material( PCM) Bismuth alloy for electric devices thermal protection was developed and investigated experimentally. The PTCU filled with PCM was designed and manufactured. Resistance heating components( RCHs) produced 1 W,3 W, 5 W,7W,and 10 W for simulating heat generation of electronic devices. At various heating power levels,the performance of PTCU were tested during heating period and one duty cycle period. The experimental results show that the PTCU delays RCH reaching the maximum operating temperature. Also,a numerical model was developed to enable interpretation of experimental results and to perform parametric studies. The results confirmed that the PTCU is suitable for electric devices thermal control.

关键词： bismuth alloy metallic phase change materials thermal control electronic device

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The evolution of graphene-based electronic devices

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International Journal of Smart and Nano Materials 2010年第3期1卷 201-223页

作者： Joydeep Basu Jayanta Kumar Basu Tarun Kanti Bhattacharyya Department of electronics and Electrical Communication Engineering Department of Chemical Engineering Indian Institute of TechnologyKharagpur 721302India

Successful isolation of single-layer graphene,the two-dimensional allotrope of carbon from graphite,has fuelled a lot of interest in exploring the feasibility of using it for fabrication of various electronic devices,particularly because of its exceptional electronic *** is poised to save Moore’s law by acting as a successor of silicon-based *** article reviews the success story of this allotrope with a focus on the structure,properties and preparation of graphene as well as its various device applications.

关键词： electronic device FET field effect graphene nanoelectronics

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electronic devices of two-dimensional semiconductors-from atomic to molecular

Electronic devices of two-dimensional semiconductors-from at...

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中国真空学会2014学术年会

作者：王欣然南京大学电子科学与工程学院

Two-dimensional materials(including graphene,M0S2,etc.)represent a promising direction for electronic and photonic devices,benefiting from their unique properties such as extremely high mobility and ultrathin *** this talk I will present our works on electronic devices based on 2D atomic and molecular semiconducting *** the first part,I will talk about our recent efforts to understand the charge transport in M0S2,and to improve the performance of MoS transistors towards its intrinsic *** provide direct evidence that sulfur vacancies exist in the material,introducing localized midgap donor *** low carrier density,the charge transport in M0S2 is by electron hopping through these localized *** results suggest that the current M0S2 device performance is still limited by intrinsic defects and charge *** a thiol chemistry,we are able to repair the sulfur vacancies and significantly reduce the charged impurities and *** a result,high mobility greater than 80cm Vsis achieved in backgated monolayer M0S2 field-effect transistors at room *** the second part,I will present our recent work on 2D molecular *** demonstrate that high-quality few-layer dioctylbenzothienobenzothiophene molecular crystals can be grown on graphene or boron nitride substrate via van der Waals epitaxy,with precisely controlled thickness down to monolayer,large-area single crystal,low process temperature and patterning *** dioctylbenzothienobenzothiophene molecular crystal field-effect transistors on boron nitride show record-high carrier mobility up to lOcmsand aggressively scaled saturation voltage around 1V,comparable to that of metal *** work unveils an exciting new class of two-dimensional molecular materials for electronic and optoelectronic applications.

关键词： 2D materials MOS2 molecular crystal electronic device

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The Advent of Wide Bandgap Green-Synthesized Copper Zinc Tin Sulfide Nanoparticles for Applications in Optical and electronic devices

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Journal of Materials Science and Chemical Engineering 2023年第3期11卷 22-33页

作者： Opeyemi S. Akanbi Haruna A. Usman Gbemi F. Abass Kehinde E. Oni Akinsanmi S. Ige Bola P. Odunaro Idowu J. Ojo Julius A. Oladejo Halimat O. Ajani Adnan Musa Joshua Ajao Department of Pure and Applied Physics Ladoke Akintola University of Technology Ogbomosho Nigeria Department of Mechanical Engineering Jigawa State Polytechnic Dutse Nigeria Department of Materials Science and Engineering Hohai University Nanjing China Department of Mechanical Engineering Ekiti State University Ado Ekiti Nigeria Department of Materials Science and Engineering University of Colorado Boulder Boulder USA Department of Chemical Engineering Ladoke Akintola University of Technology Ogbomoso Nigeria Department of Mechanical Engineering Federal University of Technology Akure Nigeria Department of Biotechnology and Genetics Russian State Agrarian University Moscow Russia

Power-electronic devices are widely used in various applications, such as voltage and frequency control for transmitting and converting electric power. As these devices are becoming increasingly important, there is a need to reduce their losses and improve their performance to reduce electric power consumption. Current power semiconductor devices, such as inverters, are made of silicon (Si), but the performance of these Si power devices is reaching its limit due to physical properties and energy bandgap. To address this issue, recent developments in wide bandgap (WBG) semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), offer the potential for a new generation of power semiconductor devices that can perform significantly better than silicon-based devices. In this research, a green synthesized copper-zinc-tin-sulfide (CZTS) nanoparticle is proposed as a new WBG semiconductor material that could be used for optical and electronic devices. Its synthesis, consisting of the production methods and materials used, is discussed. The characterization is also discussed, and further research is recommended in the later sections to enable the continual advancement of this technology.

关键词： Wide Bandgap Semiconductor Semiconductor electronic device Power device Optical device CZTS

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Silicene transistors——A review

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Chinese Physics B 2015年第8期24卷 106-115页

作者：屈贺如歌王洋洋吕劲 State Key Laboratory for Mesoscopic Physics and School of Physics Peking University State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and Telecommunications School of Science Beijing University of Posts and Telecommunications Department of Nuclear Science and Engineering and Department of Materials Science and Engineering Massachusetts Institute of Technology Collaborative Innovation Center of Quantum Matter

Free standing silicene is a two-dimensional silicon monolayer with a buckled honeycomb lattice and a Dirac band structure. Ever since its first successful synthesis in the laboratory, silicene has been considered as an option for post-silicon electronics, as an alternative to graphene and other two-dimensional materials. Despite its theoretical high carrier mobility,the zero band gap characteristic makes pure silicene impossible to use directly as a field effect transistor(FET) operating at room temperature. Here, we first review the theoretical approaches to open a band gap in silicene without diminishing its excellent electronic properties and the corresponding simulations of silicene transistors based on an opened band *** all-metallic silicene FET without an opened band gap is also introduced. The two chief obstacles for realization of a silicene transistor are silicene’s strong interaction with a metal template and its instability in air. In the final part, we briefly describe a recent experimental advance in fabrication of a proof-of-concept silicene device with Dirac ambipolar charge transport resembling a graphene FET, fabricated via a growth-transfer technique.

关键词： silicene two-dimensional materials transistor electronic device

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Using Radiation Sources to Research the Radiation Effects of the electronic devices and the Hardness Technology

Using Radiation Sources to Research the Radiation Effects of...

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第13届太平洋地区核能大会

作者： Keyun Bi Jiguo Li Chinese Academy of electronic Hebei Semiconductor Research Institute

＜正＞The present paper introduces many kinds of nuclear reactor that used forresearching radiation effects of the electronic devices and the applications in the field ofhardness technology. Including the electronic devices of electronic system metradiation condition during application in the various radiation environments;theradiation damage effects of the electronic devices under the various radiationconditions;introducing the radiation sources using for research in China briefly;at lastgiving the main researching results.

关键词： electronic device Radiation hardness

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Recent Advances in Printed Thin-Film Batteries

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Engineering 2022年第6期8卷 238-261页

作者： Benoit Clement Miaoqiang Lyu Eeshan Sandeep Kulkarni Tongen Lin Yuxiang Hu Vera Lockett Chris Greig Lianzhou Wang Nanomaterials Centre School of Chemical Engineering and Australian Institute for Bioengineering and NanotechnologyThe University of QueenslandBrisbaneQLD 4072Australia Printed Energy Pty.Ltd. BrisbaneQLD 4001Australia Printed Energy Pty.Ltd. TempeAZ 85284USA Dow Centre for Sustainable Engineering Innovation School of Chemical EngineeringThe University of QueenslandBrisbaneQLD 4072Australia

The rapidly increasing demand for wearable electronic devices has motivated research in low-cost and flexible printed batteries with diverse form factors and *** the past,technological achieve-ments in the field have been emphasized,overlooking the industrial and market ***,different applications require different battery chemistries and formats,that greatly impacts the manu-facturing process and competition *** chemistries and formats should therefore be selected carefully to maximize the chances for commercial *** some of these technologies are starting to be marketed for portable electronics,there is a pressing need to evaluate different printing technologies and compare them in terms of the processing constraints and product requirements of specific electronic *** evaluating the intrinsic strengths and current limitations of printed battery technologies,development pathways can be prioritized,and potential bottlenecks can be overcome to accelerate the path to market.

关键词： Printed battery electronic device Flexible battery Roll-to-roll printing Monolithic integration

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Compatible hybrid 3D printing of metal and nonmetal inks for direct manufacture of end functional devices

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Science China(Technological Sciences) 2014年第11期57卷 2089-2095页

作者： WANG Lei LIU Jing Beijing Key Laboratory of CryoBiomedical Engineering and Key Laboratory of Cryogenics Technical Institute of Physics and ChemistryChinese Academy of Sciences Department of Biomedical Engineering School of Medicine Tsinghua University

The currently available 3D printing still cannot simultaneously deal with the metal and nonmetal inks together due to their huge difference in the melting points and poor compatible printability between each other. Here through introducing the low melting point alloy Bi35In48.6Sn16Zno.4 and silicone rubber as functional inks, we proposed a compatible hybrid 3D printing method for manufacturing the desired device, the supporting substrate and the allied package structure together. The principle of pneumatic-typed 3D printing of multiple inks was described and typical physical properties of the ink Bi35In48.6Sn16Zno.4 were measured. Several key factors dominating the printing quality such as the temperature of the printing head, the air pressure exerted upon the liquid metal ink in the syringe, the moving velocity and the height of the printing head etc. were clarified. A general way of directly printing out 3D structured electronic devices consisting of both metal and nonmetal materials was demonstrated. Such hybrid objects were patterned and formed up layer by layer with Bi35In48.6Sn16Zno.4 alloy and silicone rub- ber which would become solidified after standing for a period of time under room temperature. To illustrate the compatible printability of these printing inks, a three-layer tricolor LED stereo circuit with controlled lighting capability was further man- ufactured and evaluated. The present study opens an important hybrid 3D printing way for directly manufacturing functional and structural end devices in an easy and low cost way.

关键词： liquid metal ink hybrid 3D printing compatible manufacture electronic device stereo circuit

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