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Study on electrical defects level in single layer two-dimensional Ta2O5

Chinese Physics B 2016年第4期25卷 339-343页

作者：李大海宋雄飞胡林峰王子仪张荣君陈良尧张卫周鹏 Department of Optical Science and Engineering Fudan University Shanghai 200433 China ASIC & System State Key Laboratory School of Microelectronics Fudan University Shanghai 200433 China Department of Materials Science and Engineering Fudan University Shanghai 200433 China

Two-dimensional atomic-layered material is a recent research focus, and single layer Ta205 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta205 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2Os. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2Os, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.

关键词： single layer electronic defects spectroscopic ellipsometry

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Free Electron Characteristic Peculiarities Caused by Lattice Vibrations in Metals

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World Journal of Condensed Matter Physics 2022年第2期12卷 9-17页

作者： Vilius Palenskis Physics Faculty Vilnius University Vilnius Lithuania

It is shown that the traditional explanation of the free electron properties, such as mean free electron path, drift mobility, and the relaxation time, by lattice vibrations, is not valid for real free randomly moving (RM) electrons in materials with degenerate electron gas. It is shown that the effective density of the free RM electrons in elemental metals is completely determined by density-of-states at the Fermi surface and by absolute temperature. The study has shown that the lattice vibrations excite not only the free RM electrons but also produce the same number of weakly screened ions (so-named electronic defects), which cause the scattering of the free RM electrons and related electron kinetic characteristics.

关键词： Metals Free Randomly Moving (RM) Electron Density Density-of-States (DOS) Probability Density electronic defects Lattice Vibration

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