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A review of experimental advances in twisted graphene moiré superlattice

Chinese Physics B 2020年第12期29卷 17-23页

作者： Yanbang Chu Le Liu Yalong Yuan Cheng Shen Rong Yang Dongxia Shi Wei Yang Guangyu Zhang Beijing National Laboratory for Condensed Matter Physics Key Laboratory for Nanoscale Physics and DevicesInstitute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Beijing Key Laboratory for Nanomaterials and Nanodevices Beijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Twisted moirésuperlattice receives tremendous interests since the discovery of correlated insulating states and superconductivity in magic angle twist bilayer graphene(MA-TBG)[Nature 55680(2018),Nature 55643(2018)],even gives arise to a new field"twistronics"[Science 361690(2018)].It is a new platform hosting strong electron correlations,providing an alternative for understanding unconventional *** this article,we provide a review of recent experimental advances in the twisted moirésuperlattice,from MA-TBG to twisted double bilayer graphene and other two-dimensional materials based moirésuperlattice,covering correlated insulating states,superconductivity,magnetism,et al.

关键词： twisted 2D moirésuperlattice electron correlations superconductivity magnetism

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Epitaxial growth of trilayer graphene moiré superlattice

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Chinese Physics B 2023年第7期32卷 510-514页

作者：袁亚龙褚衍邦胡成田金朋刘乐吴帆帆季怡汝赵交交黄智恒昝晓洲杜罗军 Kenji Watanabe Takashi Taniguchi 时东霞史志文杨威张广宇 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics Chinese Academy of Sciences(CAS)Beijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Key Laboratory of Artificial Structures and Quantum Control(Ministry of Education) School of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China Collaborative Innovation Center of Advanced Microstructures Nanjing 210093China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Songshan Lake Materials Laboratory Dongguan 523808China

The graphene-based moiré superlattice has been demonstrated as an exciting system for investigating strong correlation phenomenon. However, the fabrication of such moiré superlattice mainly relies on transfer technology. Here, we report the epitaxial growth of trilayer graphene(TLG) moiré superlattice on hexagonal boron nitride(h BN) by a remote plasma-enhanced chemical vapor deposition method. The as-grown TLG/h BN shows a uniform moiré pattern with a period of ~ 15 nm by atomic force microscopy(AFM) imaging, which agrees with the lattice mismatch between graphene and h BN. By fabricating the device with both top and bottom gates, we observed a gate-tunable bandgap at charge neutral point(CNP) and displacement field tunable satellite resistance peaks at half and full fillings. The resistance peak at half-filling indicates a strong electron–electron correlation in our grown TLG/h BN superlattice. In addition, we observed quantum Hall states at Landau level filling factors ν = 6, 10, 14,..., indicating that our grown trilayer graphene has the ABC stacking order. Our work suggests that epitaxy provides an easy way to fabricate stable and reproducible two-dimensional strongly correlated electronic materials.

关键词： epitaxial growth ABC-TLG/hBN moirésuperlattice electron correlations

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Influence of temperature and LO phonon on the effective mass of bipolarons in polar semiconductor quantum dots

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Optoelectronics Letters 2012年第6期8卷 477-480页

作者：辛伟高忠明韩超额尔敦朝鲁 Institute of Condensed Matter Physics Hebei Normal University of Science&Technology

The temperature and LO phonon effects of the bipolaron in polar semiconductor quantum dots （QDs） are studied by using the Tokuda modified linear-combination operator method and the Lee-Low-Pines variational method. The expressions for the mean number ofLO phonons and the effective mass of the bipolaron are derived. Numerical results show that the mean number of LO phonons of the bipolaron decreases with increasing the temperature and the relative distance r between two electrons, but increases with increasing the electron-phonon coupling strength a The effective mass of the bipolaron M＊ increases rapidly with increasing the relative distance r between two electrons when r is smaller, and it reaches a maximum at r ≈ 4.05rp, while after that, 34＊ decreases slowly with increasing r. The effective mass of the bipolaron M＇ decreases with increasing the temperature. The electron-phonon coupling strength a markedly influences the changes of mean number of LO phonons and the effective mass M＊ with the relative distance r and the temperature parameter y.

关键词： electron correlations electron phonon interactions Semiconductor quantum dots

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