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Tuning the electronic conductance of REHx（RE = Nd, Ce, Pr） by structural deformation

Journal of Energy Chemistry 2024年第8期95卷 440-445页

作者： Shangshang Wang Weijin Zhang Jirong Cui Shukun Liu Hong Wen Jianping Guo Teng He Hujun Cao Ping Chen Dalian Institute of Chemical Physics Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences State Key Laboratory of Catalysis Chinese Academy of Sciences

Hydride ion（H-） conductors have drawn much attention due to their potential applications in hydrideion-based devices. Rare earth metal hydrides（REHx） have fast H-conduction which, unfortunately, is accompanied by detrimental electron conduction preventing their application as ion conductors. Here,REHx（RE = Nd, Ce, and Pr） with varied grain sizes, rich grain boundaries, and defects have been prepared by ball milling and subsequent sintering. The electronic conductivity of the ball-milled REHxsamples can be reduced by 2–4 orders of magnitude compared with the non-ball-milled samples. The relationship of electron conduction and miscrostructures in REHxis studied and discussed based on experimental data and previously-proposed classical and quantum theories. The H-conductivity of all REHxis about 10-4to 10-3S cm-1at room temperature, showing promise for the development of H-conductors and their applications in clean energy storage and conversion.

关键词： Crystal defect electron conduction electron scattering Hydride ion conduction Nanosized grain

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Coupling plasma plume of a low-power magnetically shielded Hall thruster with a hollow cathode

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Chinese Journal of Aeronautics 2020年第12期33卷 3018-3026页

作者： Guangchuan ZHANG Junxue REN Wei LIANG Ning OUYANG Chao LU Haibin TANG School of Space and Environment Beihang UniversityBeijing 100083China School of Astronautics Beihang UniversityBeijing 100083China Shanghai Institute of Space Propulsion Shanghai 201112China Key Laboratory of Spacecraft Design Optimization&Dynamic Simulation Technologies Ministry of EducationBeijing 100083China Laboratory of Space Environment Monitoring and Information Processing Ministry of Industry and Information TechnologyBeijing 100083China

The coupling region of a Hall thruster with a hollow cathode is the region between the cathode and the thruster plume.The characteristics of plasma in that region are complicated and strongly associated with the thruster working conditions and the cathode position.In this paper,a laboratory 100 W class magnetically shielded Hall thruster was coupled with a hollow cathode.Optical imaging and electrostatic probe were employed to monitor and scan the plasma plume.Plume characteristics in the coupling region in non-self-sustained mode and self-sustained mode were compared.Evolution of the coupling plume with the cathode position was studied.Experiments show that,when turning the thruster into self-sustained mode or moving the cathode further away axially,the discharge current can be reduced by 6.4–10.6%restraining the electron current and improving ionization.In particular,when the cathode is moved further,the electron conduction near the channel walls is suppressed.The electron current is reduced by 27.4%and the ion beam current is increased by 7%.Overall,this work shows that the working mode of the thruster and the position of the cathode greatly affect the coupling plasma plume.Both play an important role in improving the utilizations of propellant and current.

关键词： Coupling region electron conduction Hall thruster Hollow cathode Utilizations of propellant and current

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Fowler-Nordheim Tunneling, Photovoltaic Applications and New Band Structure Models of Electroconductive a-CN_x:H Films Formed by Supermagnetron Plasma CVD

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Journal of Modern Physics 2016年第15期7卷 2008-2027页

作者： Haruhisa Kinoshita Department of Electrical and electronic Engineering Graduate School of Engineering Shizuoka University Hamamatsu Japan

Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on Al films deposited on Si or glass (SiO2) substrates, using pulsed radio frequency (PRF) supermagnetron plasma (SMP) chemical vapor deposition (CVD) with N2/i-C4H10 mixed gases. a-CNx:H films were grown under the upper and lower electrode RF powers (13.56 MHz) of continuous and pulsed conditions, respectively, which showed low band gap of about 0.7 eV. a-CNx:H films deposited on the Al/Si or Al/SiO2 substrates showed same low threshold emission electric field (ETH) of 12 V/μm. Multiple layer of Al or ITO (anode)/50nm-SiO2/a-CNx:H/Al (cathode)/Si structures showed Fowler-Nordheim (FN) electron tunneling effect in both forward and reverse current directions. 12.5 nm a-CNx:H film on p-Si substrate showed a photoelectric conversion. Energy band structure and electron conduction models were proposed for the active states of both the field emission and FN tunneling devices and photovoltaic cells.

关键词： Supermagnetron Plasma Chemical Vapor Deposition Amorphous Carbon Nitride Energy Band electron conduction Field Emission FN Tunneling Photovoltaic Cell

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