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Thermoelectric properties of Sr_(0.61)Ba_(0.39)Nb_2O_(6-δ) ceramics in different oxygen-reduction conditions

Chinese Physics B 2015年第4期24卷 349-354页

作者：李宜刘剑王春雷苏文斌祝元虎李吉超梅良模 School of Physics Shandong University State Key Laboratory of Crystal Materials Shandong University

The thermoelectric properties of Sr0.61Ba0.39Nb2O6-δ ceramics, reduced in different conditions, are investigated in the temperature range from 323 K to 1073 K. The electrical transport behaviors of the samples are dominated by the thermal-activated polaron hopping in the low temperature range, the Fermi glass behavior in the middle temperature range, and the Anderson localized behavior in the high temperature range. The thermal conductivity presents a plateau at high- temperatures, indicating a glass-like thermal conduction behavior. Both the thermoelectric power factor and the thermal conductivity increase with the increase of the degree of oxygen-reduction. Taking these two factors into account, the oxygen-reduction can still contribute to promoting the thermoelectric figure of merit. The highest ZT value is obtained to be -0.19 at 1073 K in the heaviest oxygen reduced sample.

关键词： Sr0.61Ba0.39Nb2O6-δ electrical transport mechanism thermoelectric figure of merit thermal conductivity

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Fermi level unpinning achievement and transport modification in Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb laminated stacks by doping engineering

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Journal of Materials Science & Technology 2022年第26期121卷 130-139页

作者： Lin Hao Gang He Shanshan Jiang Zhenxiang Dai Ganhong Zheng Jinyu Lu Lesheng Qiao Jingbiao Cui School of Materials Science and Engineering Anhui UniversityHefei230601China School of Integration Circuits Anhui UniversityHefei230601China School of Physics and Optoelectronics Engineering Anhui UniversityHefei230601China Department of Physics University of North TexasDentonTX76203USA

Fermi level pinning and interface instability have hindered the achievement of field-effect-transistors(FETs)with high *** passivation and doping engineering technology have become the main driving force to solve the ***,interface chemistry and transport characteristics determination of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb gate stacks have been achieved by passivation and doping process.X-ray photoelectron spectroscopy characterization and electrical measurements have demonstrated the existence of less intrinsic oxides and elemental Sb at Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb interface with optimized doping content,as well as the minimum leakage current density of 2.23×10^(5)A *** energy distribution of interface state based on conductance method has confirmed the achievement of the lowest interface state density of 1.98×10^(13)e Vcm,resulting in Fermi level *** transport mechanisms of Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb MOS capacitors as a function of temperature have been investigated systematically and some important electrical parameters have been *** analyses show that sputtering-derived Hf_(1-x)Yb_(x)O_(y)/Al_(2)O_(3)/GaSb(x=0.32)gate stack has potential application in future Ga Sbbased metal-oxide-semiconductor field effect transistor(MOSFET)devices.

关键词： Fermi level pinning High-k gate dielectrics Field effect transistor electrical transport mechanism Doping

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