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Structure inversion asymmetry enhanced electronic structure and electrical transport in 2D A3SnO(A=Ca,Sr,and Ba)antiperovskite monolayers

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Nano Research 2023年第1期16卷 1779-1791页

作者： Syed Muhammad Alay-e-Abbas Ghulam Abbas Waqas Zulfiqar Muhammad Sajjad Nirpendra Singh J.Andreas Larsson Applied Physics Division of Materials ScienceDepartment of Engineering Sciences and MathematicsLuleåUniversity of Technology97187 LuleåSweden Computational Materials Modeling Laboratory Department of PhysicsGovernment College UniversityFaisalabad 38040Pakistan Department of Energy Conversion and Storage Technical University of Denmark2800 Kgs.LyngbyDenmark Department of Physics Khalifa University of Science and TechnologyAbu Dhabi-127788United Arab Emirates Center for Catalysis and Separation(CeCaS) Khalifa University of Science and TechnologyAbu Dhabi-127788United Arab Emirates

Anti-perovskites A3SnO(A=Ca,Sr,and Ba)are an important class of materials due to the emergence of Dirac cones and tiny mass gaps in their band structures originating from an intricate interplay of crystal symmetry,spin–orbit coupling,and band overlap.This provides an exciting playground for modulating their electronic properties in the two-dimensional(2D)limit.Herein,we employ first-principles density functional theory(DFT)calculations by combining dispersion-corrected SCAN+rVV10 and mBJ functionals for a comprehensive side-by-side comparison of the structural,thermodynamic,dynamical,mechanical,electronic,and thermoelectric properties of bulk and monolayer(one unit cell thick)A3SnO anti-perovskites.Our results show that 2D monolayers derived from bulk A3SnO anti-perovskites are structurally and energetically stable.Moreover,Rashba-type splitting in the electronic structure of Ca3SnO and Sr3SnO monolayers is observed owing to strong spin–orbit coupling and inversion asymmetry.On the other hand,monolayer Ba3SnO exhibits Dirac cone at the high-symmetryΓpoint due to the domination of band overlap.Based on the predicted electronic transport properties,it is shown that inversion asymmetry plays an essential character such that the monolayers Ca3SnO and Sr3SnO outperform thermoelectric performance of their bulk counterparts.

关键词： electrical transport anti-perovskites low-dimensional materials electronic structure mechanical properties

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electrical transport and thermoelectric properties of Ni-doped perovskite-type YCo_(1-x)Ni_xO_3 (0 ≤ x ≤ 0.07) prepared by sol-gel process

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Chinese Physics B 2013年第5期22卷 456-461页

作者：刘义李海金张清李勇刘厚通 School of Mathematics and Physics Anhui University of Technology

electrical transport and thermoelectric properties of Ni-doped YCOl-xNixO3 （0 ≤ x ≤0.07）, prepared by using the sol-gel process, are investigated in a temperature range from 100 to 780 K. The results show that with the increase of Ni doping content, the values of DC resistivity of YCo 1-xNixO3 decrease, but carder concentration increases. The temperature dependences of the resistivity for YCOl-xNixO3 are found to follow a relation of lnp o, lIT in a low-temperature range （LTR）（T 〈- 304 K for x = 0; - 230 K 〈 T 〈- 500 K for x = 0.02, 0.05, and 0.07） and high-temperature range （HTR）（T 〉-655 K for all compounds）, respectively. The estimated apparent activation energies for conduction Eal in LRT and Ea2 in HTR are both found to decrease monotonically with doping content increasing. At very low temperatures （T 〈-230 K）, Mott＇s law is observed for YCOl-xNixO3 （x≥ 0.02）, indicating that considerable localized states form in the heavy doping compounds. Although the Seebeck coefficient of the compound decreases after Ni doping, the power factor of YCOl-xNixO3 is enhanced remarkably in a temperature range from 300 to 740 K, i.e., a 6-fold increase is achieved at 500 K for YCo0.98Ni0.0203, indicating that the high-temperature thermoelectric property of YCoO3 can be improved by partial substitution of Ni for Co.

关键词： perovskite cobalt oxides sol-gel process electrical transport thermoelectric property

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electrical transport properties of YCo_(1-x)Mn_xO_3(0 ≤x≤ 0.2)prepared by sol–gel process

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Chinese Physics B 2015年第4期24卷 355-359页

作者：刘义李海金 School of Mathematics and Physics Anhui University of Technology Institute of Optoelectronic Information Materials and Technologies Anhui University of Technology

Mn substitution compounds YCOl-xMnxO3 （0 ≤ x ≤ 0.2） are synthesized by using the sol-gel process. electrical transport properties of YCo1-xMnxO3 are investigated in the temperature range from 200 K to 780 K. The experimental results show that after Mn substitution the electrical resistivity of YCo1-xMnxO3 first increases, then decreases, which is due to the electrons introduced by Mn doping. The sign of Seebeck coefficient for YCo1-xMnxO3 （x ≠ 0） is positive or negative, which is also proved by the Hall coefficient measurement. Moreover, at about room temperature, the Seebeck coefficient of YCO1-xMnxO3 with 1% doping Mn content becomes a negative value, whose absolute value is maximum; furthermore, the absolute value gradually decreases with increasing the Mn substitution content, which can be explained by the double carder model.

关键词： perovskite cobalt oxides sol-gel process electrical transport

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electrical transport properties of focused ion beam lithography Au contacts on PbTiO_(3)nanorods

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Journal of Advanced Dielectrics 2019年第4期9卷 18-23页

作者： Jian Wang Bin Chen Heming Deng Xiaojun Zhang Xiaoguang Li Yuancheng Cao Yongming Hu Electric Power Research Institute of State Grid Xinjiang Electric Power Co.Ltd.Hengda Street 200 New and high-tech Industrial Development Zone(New Urban)Urumqi 830011P.R.China State Grid Electric Power Research Institute Luoyu Road 143 Wuhan 430074HubeiP.R.China School of electrical and Electronic Engineering Huazhong University of Science and Technology Luoyu Road 1037 Wuhan 430074P.R.China Hubei Key Laboratory of Ferro&Piezoelectric Materials and Devices and Faculty of Physics&Electronic Science Hubei University Wuhan 430062P.R.China

PbTiO_(3)nanorods with tetragonal phase were synthesized by hydrothermal method and heat treatment,and temperature-dependent electrical transport properties of individual PbTiO_(3)nanorod were investigated.The results show that the conductivities of PbTiO_(3)nanorods are gradually enhanced with temperature increasing from 77.4 to 295 K,and exhibit the typical nonlinear Ⅰ–Ⅴ char-acteristics.The barrier height between Au electrode and nanorod is reduced from 0.137 to 0.088 eV with increasing bias from 0.2 to 1 V.The corresponding values of thermal activation energies are 0.172 and 0.06 eV below the conduction band for 180–295 and 77.4–180 K,respectively.This semiconductor-like behavior may result from the larger number of surface defects or localized states in the amorphorized PbTiO_(3).

关键词： PbTiO_(3) nanorods focused ion beam electrical transport surface states.

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Anisotropic metal–insulator transition in strained VO_(2)(B) single crystal

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Chinese Physics B 2024年第6期33卷 56-61页

作者：马泽成闫胜楠刘增霖徐涛陈繁强陈思成曹天俊孙立涛程斌梁世军缪峰 Institute of Brain-Inspired Intelligence National Laboratory of Solid State MicrostructuresSchool of PhysicsCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China SEU-FEI Nano-Pico Center Key Laboratory of MEMS of Ministry of EducationSoutheast UniversityNanjing 210096China Institute of Interdisciplinary of Physical Sciences School of ScienceNanjing University of Science and TechnologyNanjing 210094China

Mechanical strain can induce noteworthy structural and electronic changes in vanadium dioxide, imparting substantial scientific importance to both the exploration of phase transitions and the development of potential technological applications. Unlike the traditional rutile(R) phase, bronze-phase vanadium dioxide [VO_(2)(B)] exhibits an in-plane anisotropic structure. When subjected to stretching along distinct crystallographic axes, VO_(2)(B) may further manifest the axial dependence in lattice–electron interactions, which is beneficial for gaining insights into the anisotropy of electronic transport.Here, we report an anisotropic room-temperature metal–insulator transition in single-crystal VO_(2)(B) by applying in-situ uniaxial tensile strain. This material exhibits significantly different electromechanical responses along two anisotropic axes.We reveal that such an anisotropic electromechanical response mainly arises from the preferential arrangement of a straininduced unidirectional stripe state in the conductive channel. This insulating stripe state could be attributed to the in-plane dimerization within the distorted zigzag chains of vanadium atoms, evidenced by strain-modulated Raman spectra. Our work may open up a promising avenue for exploiting the anisotropy of metal–insulator transition in vanadium dioxide for potential technological applications.

关键词： vanadium dioxide strain anisotropy electrical transport

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Variable range hopping transport and dielectric relaxation mechanism in GdCrO3 rare-earth orthochromite perovskite

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Journal of Rare Earths 2024年第7期42卷 1304-1316页

作者： Muhammad Javed Ayaz Arif Khan Jamal Kazmi Naeem Akbar Said Nasir Khisro Amanullah Dar Aleem Dad Khan Tareen Mohd Ambri Mohamed Department of Physics The University of Azad Jammu and Kashmir Department of Physics University of Kotli Azad Jammu and Kashmir Institute of Microengineering and Nanoelectronics Universiti Kebangsaan Malaysia Department of Mathematics University of Kotli Azad Jammu and Kashmir

The polycrystalline GdCrO3（GCO） perovskite orthochromite was synthesized by the sol-gel autocombustion method.The Rietveld refined X-ray diffraction（XRD） profile of GCO confirms that the orthorhombic phase crystallizes in perovskite crystal structure with space group Pbnm.The transmission electron microscopy and selected area electron diffraction divulge the polycrystalline nature of the perovskite chromite.The field emission scanning electron microscopy（FESEM） images reveal the micro structural polyhedral growth of grains separated by sharp grain boundaries.The chemical states of the ions present in the compound were investigated by X-ray photoelectron spectroscopy（XPS） studies,and the electrical pathways were identified.Complex impedance studies were carried out in the experimental frequency and temperature ranges of 40 Hz-4 MHz and 178-408 K,respectively.The equivalent circuit model（RGQG）(RGBQGB) resolves the impedance response into two contributions originating from the intra-grain and inter-granular micro-constituents of the material.The electrical conduction mechanism is based on the Mott variable range hopping model.The complex electric modulus studies demonstrate the short-and long-range mobility of the charge carriers and rule out the presence of electrode effects on the dielectric relaxation mechanism of the material.The decreasing pattern of dielectric permittivity with frequency is explained by the Maxwell-Wagner type of polarization.The frequency dependence of the loss factor exhibits the presence of thermally activated relaxation time distribution in the material.

关键词： Auto-combustion Dielectric electrical transport Electro-ceramic Impedance Perovskite

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Molecule-based vertical transistor via intermolecular charge transport throughπ-πstacking

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Nano Research 2024年第5期17卷 4573-4581页

作者： Cheng Liu Cheng Fu Lingyu Tang Jianghua Wu Zhangyan Mu Yamei Sun Yanghang Pan Bailin Tian Kai Bao Jing Ma Qiyuan He Mengning Ding Key Laboratory of Mesoscopic Chemistry School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China Jiangsu Key Laboratory of Advanced Organic Materials School of Chemistry and Chemical EngineeringNanjing UniversityNanjing 210023China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied SciencesCollaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China Department of Materials Science and Engineering City University of Hong KongHong Kong 999077China

Theπ-πstacking is a well-recognized intermolecular interaction that is responsible for the construction of electron hopping channels in numerous conducting frameworks/aggregates.However,the exact role ofπ-to-πchannels within typical single crystalline organic semiconductors remains unclear as the orientations of these molecules are diverse,and their control usually requires additional side chain groups that misrepresent the intrinsic properties of the original semiconducting molecules.Therefore,the construction of conduction channels with intrinsicπ-πstacking in the molecule-based device is crucial for the utilization of their unique transport characteristics and understanding of the transport mechanism.To this end,we present a molecular intercalation strategy that integrates two-dimensional layered materials with functional organic semiconductor molecules for functional molecule-based electronics.Various organic semiconductor molecules can be effectively intercalated into the van der Waals gaps of semi-metallic TaS_(2) withπ-πstacking configuration and controlled intercalant content.Our results show that the vertical charge transport in the stacking direction shows a tunneling-dominated mechanism that strongly depends on the molecular structures.Furthermore,we demonstrated a new type of molecule-based vertical transistor in which TaS_(2) andπ-πstacked organic molecules function as the electrical contact and the active channel,respectively.On/off ratios as high as 447 are achieved under electrostatic modulation in ionic liquid,comparable to the current state-of-the-art molecular transistors.Our study provides an ideal platform for probing intrinsic charge transport acrossπ-πstacked conjugated molecules and also a feasible approach for the construction of high-performance molecule-based electronic devices.

关键词： π-πstacking electrochemical intercalation organic semiconductor electrical transport tunneling field effect transistor

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In situ electrical transport measurement of superconductive ultrathin films

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Chinese Physics B 2015年第11期24卷 1-9页

作者：刘灿华贾金锋 Key Laboratory of Artificial Structures and Quantum Control Department of Physics and AstronomyShanghai Jiao Tong University Collaborative Innovation Center of Advanced Microstructures

The discovery of an extraordinarily superconductive large energy gap in SrTiO3 supported single-layer FeSe films has recently initiated a great deal of research interests in surface-enhanced superconductivity and superconductive ultrathin films fabricated on crystal surfaces. On account of the instability of ultra-thin films in air, it is desirable to perform elec- trical transport measurement in ultra-high vaccum （UHV）. Here we review the experimental techniques of in situ electrical transport measurement and their applications on superconductive ultrathin films.

关键词： electrical transport superconductive film FeSe

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Effect of oxygen pressure on electrical transport properties for(110) oriented La_(2/3)Sr_(1/3)MnO_3 films directly deposited on silicon

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Journal of Rare Earths 2013年第4期31卷 376-380页

作者：李廷先李扩社于敦波张飞鹏张铭于凤军 College of Physics and electrical Engineering Anyang Normal University National Engineering Research Center for Rare earth Materials General Research Institute for Nonferrous MetalsGrirem Advanced Materials Co.Ltd. Department of Mathematics and Physics Henan University of Urban Construction College of Materials Science and Engineering Beijing University of Technology

La2/3Sr1/3MnO3 films with （110） preferred orientation were deposited on Si （100） substrate without any buffer layer by pulsed laser deposition technique. Effect of oxygen pressure on orientation, surface morphology, and electrical transport properties were investigated. The film deposited at 10 Pa presented （110） preferred orientation with the best crystalline quality, the largest grain size, and the smallest roughness. The （110） oriented film presented higher metal-insulator transition temperature, and the lower resis- tivity than that of the samples without preferred orientation.

关键词： colossal magnetoresistive film LSMO pulsed laser deposition electrical transport rare earths

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Electronic properties of 2D materials and their junctions

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Nano Materials Science 2024年第1期6卷 1-23页

作者： Taposhree Dutta Neha Yadav Yongling Wu Gary J.Cheng Xiu Liang Seeram Ramakrishna Aoussaj Sbai Rajeev Gupta Aniruddha Mondal Zheng Hongyu Ashish Yadav Department of Chemistry Indian Institute of Engineering Science and TechnologyShibpurWest Bengal711103India Center for Advanced Laser Manufacturing(CALM) Shandong University of TechnologyZibo255000PR China School of Industrial Engineering Purdue University315 N.Grant St.West LafayetteIN47907United States Birck Nanotechnology Center Purdue University1205 W State St.West LafayetteIN47907United States Advanced Materials Institute Qilu University of TechnologyShandong Academy of SciencesJinan250014PR China Nanoscience and Nanotechnology Initiative National University of Singapore10 Kent Ridge Crescent119260Singapore Faculty of Applied Phsyics and Mathematics Gdansk University of Technology Narutowicza 11/1280233GdanskPoland Department of Physics School of EngineeringUniversity of Petroleum&Energy StudiesDehradun248007UttarakhandIndia Department of Physics National Institute of Technology DurgapurDurgapur713209West BengalIndia

With an extensive range of distinctive features at nano meter-scale thicknesses,two-dimensional(2D)materials drawn the attention of the scientific community.Despite tremendous advancements in exploratory research on 2D materials,knowledge of 2D electrical transport and carrier dynamics still in its infancy.Thus,here we highlighted the electrical characteristics of 2D materials with electronic band structure,electronic transport,dielectric constant,carriers mobility.The atomic thinness of 2D materials makes substantially scaled field-effect transistors(FETs)with reduced short-channel effects conceivable,even though strong carrier mobility required for high performance,low-voltage device operations.We also discussed here about factors affecting 2D materials which easily enhanced the activity of those materials for various applications.Presently,Those 2D materials used in state-of-the-art electrical and optoelectronic devices because of the extensive nature of their electronic band structure.2D materials offer unprecedented freedom for the design of novel p-n junction device topologies in contrast to conventional bulk semiconductors.We also,describe the numerous 2D p-n junctions,such as homo junction and hetero junction including mixed dimensional junctions.Finally,we talked about the problems and potential for the future.

关键词： 2D materials electrical properties p-n junctions Mixed hereto junctions Homo junctions electrical transport

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