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Research of Current Mode Atomic Force Microscopy (C-AFM) for Si/SiC Heterostructures on 6H-SiC(0001)

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Journal of Beijing Institute of Technology 2020年第2期29卷 184-189页

作者： Song Feng Lixun Song Yuan Zang Zheyan Tu Lianbi Li School of Science Xi’an Polytechnic UniversityXi’an 710048China Department of Electronic Engineering Xi’an University of TechnologyXi’an 710048China

Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by *** mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC ***-centered cubic(FCC)on hexagonal close-packing(HCP)epitaxy of the Si(111)/SiC(0001)heterostructure was realized at 900°*** the growth temperature increases to1050°C,thepreferred orientation of the Si film is *** Si films on 6 H-SiC(0001)with different growth orientations consist of different distinctive crystalline grains:quasi-spherical grains with a general size of 20μm,and columnar grains with a typical size of 7μm×20μ*** electrical properties are greatly influenced by the grain *** Si film withorientation on SiC(0001)consists of columnar grains,which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.

关键词： Si/6H-SiC heterostructure electrical properties current mode AFM chemical vapor deposition

Preparation, properties, and electronic applications of 2D Bi_(2)O_(2)Se

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Advanced Powder Materials

Advanced Powder Materials 2023年第1期2卷 108-120页

作者： Wenjun Chen Rongjie Zhang Yujie Sun Jingwei Wang Yun Fan Bilu Liu School of Electronic Information Engineering Foshan UniversityFoshan 528000China Shenzhen Geim Graphene Center Tsinghua-Berkeley Shenzhen Institute and Institute of Materials ResearchShenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055China

Two-dimensional(2D)materials offer novel platforms to meet the increasing demands of next-generation miniaturized *** them,the recently emerged 2D Bi_(2)O_(2)Se with unique non-van der Waals interlayer interaction,high mobility,sizeable bandgap,and capability to fabricate homologous heterojunction,is of particular *** this Review,we introduce recent progress in preparation,transfer,mechanical and electrical properties,and electronic applications of 2D Bi_(2)O_(2)***,we summarize methodologies to synthesize and massively produce 2D Bi_(2)O_(2)Se,as well as recent advances in transferring them from growth substrate to arbitrary ***,we review current understandings on the intrinsic mechanical properties of Bi_(2)O_(2)Se at 2D thickness limit,and its in-plane and out-of-plane electrical *** devices including field-effect transistors,memristors,and sensors based on 2D Bi_(2)O_(2)Se for neuromorphic computing,memory,logic,and integrated circuits are ***,challenges and prospects for the development of 2D Bi_(2)O_(2)Se are proposed.

关键词： Two-dimensional materials Bi_(2)O_(2)Se Preparation Transfer Mechanical properties electrical properties Devices

Multifunctional barium titanate ceramics via chemical modification tuning phase structure

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InfoMat 2020年第6期2卷 1163-1190页

作者： Chunlin Zhao Yanli Huang Jiagang Wu Department of Materials Science Sichuan UniversityChengduChina

Global environmental concerns on the toxicity of lead-based piezoelectrics impel the great mass fervor on investigations of lead-free *** titanate(BaTiO3,BT)ceramics,the first discovered perovskite ferroelectrics,were widely employed to fabricate dielectric capacitors from *** a piezoelectric breakthrough was achieved via chemical modification,intensive researches have been performed embracing lead-free BT-based piezoelectrics and their extensional *** this review,we encompass the stateof-the-art progress on chemical modification tuning phase structure toward advanced electrical properties in BT-based ***,modulated regularity of cations substitution on phase transition is summarized and ***,we highlight the common methodologies of phase structure(phase boundary,relaxor phase,room-temperature phase transition,etc.)design for optimizing piezoelectricity,electrostrictive strain,electrocaloric,dielectric energy storage or permittivity performances,and cover the noticeable developments and relevant physical ***,perspectives and challenges on future research issues are *** review proposes to exert the significant guidance and service for material design of BT-based and other lead-free perovskite materials with superior functionalities.

关键词： barium titanate-based ceramics chemical modification design methodologies electrical properties phase structure

Synthesis and High Temperature Thermoelectric properties of Ca_(2.7-x)Er_(0.3)Na_xCo_4O_(9+δ)

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Journal of Rare Earths 2007年第S1期25卷 395-399页

作者：裴健陈刚陆冬青滕玉洁 Department of Applied Chemistry Harbin Institute of Technology

Polycrystalline Ca2.7-xEr0.3NaxCo4O9+δ (x=0, 0.05, 0.1, 0.15) samples were prepared using a sol-gel process followed by hot-pressing technique sintering and their high-temperature thermoelectric properties were measured from 350 up to 1073 K. The results showed that with the increase of the dopant amount of Na, the electrical conductivity increased, while the Seebeck coefficient and thermal conductivity decreased. The electrical conductivity was dominated by polaron hopping conductivity mechanism above about 550 K and the Na+ substitution for Ca2+ could not change the transport mechanism. The dimensionless figure of merit ZT value reaches 0.31 for Ca2.55Er0.3Na0.15Co4O9+δ at 1073 K, which suggested that Ca2.7-xEr0.3NaxCo4O9+δ (x=0, 0.05, 0.1, 0.15) were good potential oxides for thermoelectric application.

关键词： Co-based oxides sol-gel process electrical properties rare earths

Comparative characteristics of yttrium oxide and yttrium nitric acid doping in ZnO varistor ceramics

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Journal of Central South University 2012年第8期19卷 2094-2100页

作者：徐东唐冬梅焦雷袁宏明赵国平程晓农 School of Materials Science and Engineering Jiangsu University Key Laboratory of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of Sciences State Key Laboratory of electrical Insulation and Power Equipment(Xi'an Jiaotong University) Changzhou Engineering Research Institute Jiangsu University State Key Laboratory of Inorganic Synthesis and Preparative Chemistry(Jilin University) College of Chemistry Jilin University

The effect of different molar ratios of Y2O3 and Y（NO3）3 on the microstructure and electrical response of ZnO-Bi203-based varistor ceramics sintered at 1 000 ℃ was investigated, and the mechanism by which this doping improves the electrical characteristics of ZnO-Bi203-based varistor ceramics was discussed. With increasing amounts of Y（NO3）3 or Y2O3 in the starting composition, Y2O3, Sb204 and Y-containing Bi-rich phase form, and the average grain size significantly decreases. The average grain size significantly decreases as the contents of rare earth compounds of Y（NO3）3 or Y2O3 increase. The maximum value of the nonlinear coefficient is found at 0.16% Y（NO3）3 or 0.02% YaO3 （molar fraction） doped varistor ceramics, and there is an increase of 122% or 35% compared with the varistor ceramics without Y（NO3）3 or Y2O3. The threshold voltage VT of Y（NO3）3 and Y2O3 reaches at 1 460 V/mm and 1 035 V/ram, respectively. The results also show that varistor sample doped with Y（NO3）3 has a remarkably more homogeneous and denser microstructure in comparison to the sample doped with Y2O3.

关键词： ceramics varistor rare earth microstructure electrical properties

A review on emerging materials with focus on BiI_(3) for room-temperature semiconductor radiation detectors

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Radiation Detection Technology and Methods 2023年第4期7卷 465-483页

作者： Ritu Chaudhari Chhaya Ravi Kant Alka Garg Surender Kumar Sharma Department of Applied Sciences and Humanities Indira Gandhi Delhi Technical University for WomenKashmere GateDelhi110006India Gargi College University of DelhiSiri Fort RoadNew Delhi110049India Delhi Skill and Entrepreneurship University New DelhiIndia

Purpose Considerable advances in the fundamental knowledge and applications of radiation science have led to significant progress and development of room-temperature semiconductor radiation detectors(RTSD).The RTSDs technologies are continuously evolving with accelerated research and material engineering in the last *** scientific and technological advancements have led to development of high-performance radiation detectors with high signal-to-noise ratio(SNR),better sensitivity,faster response and higher-resolution with capability of desired room-temperature *** paper is a review on emerging semiconductor radiation detector materials with a deeper insight into the prospective role of Bismuth tri-iodide(BiI_(3))for room-temperature radiation *** An introduction of the state of art of most developed semiconductor materials,i.e.,cadmium telluride(CdTe),mercury iodide(HgI_(2)),lead iodide(PbI_(2)),etc.,and a critical examination of properties,shortcomings and challenges related to their synthesis have been ***-semiconductor composites with desirable properties and their integration into detector devices is also *** sections discuss the role of BiI_(3) as an emerging radiation detector material for room-temperature operation with an in-depth discussion on the role of defects in charge transportation and electrode ***,the current challenges along with the future prospects of these materials for radiation detection to promote continuous innovation and practical applications are also *** The comprehensive review on latest developments in room-temperature radiation detector materials is expected to help establish a technological roadmap for the synthesis,fabrication and commercialization of novel materials for development of efficient radiation detectors.

关键词： Radiation detector Defects electrical properties Bismuth tri-iodide Semiconductor Toxicity

Synthesis and electroluminescence characterization of a new aluminum complex, [8- hydroxyquinoline] bis [2, 2＇bipyridine] aluminum Al(Bpy)2q

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Journal of Semiconductors 2016年第1期37卷 11-15页

作者： Rahul Kumar Ritu Srivastava Punita Singh Indian Institute of Technology Bombay Mumbai 400076 India National Physical Laboratory New Delhi 110022 India

We have synthesized and characterized a new electroluminescent material, [8-hydroxyquinoline] bis[2,2＇bipyridine] aluminum. A solution of this material Al（Bpy）2q in toluene showed absorption maxima at 380 nm,which was attributed to the moderate energy（ π–π＊） transitions of the aromatic rings. The photoluminescence spectrum of Al（Bpy）_2q in the toluene solution showed a peak at 518 nm. This material shows thermal stability up to300 ℃. The structure of the device is ITO/F4-TCNQ（1 nm）/α-NPD（35 nm）/Al（Bpy）2q（35 nm）/ BCP（6 nm）/Alq3（28 nm）/Li F（1 nm）/Al（150 nm）. This device exhibited a luminescence peak at 515 nm（CIE coordinates, xD0.32,yD0.49）. The maximum luminescence of the device was 214 cd/m^2 at 21 V. The maximum current efficiency of OLED was 0.12 cd/A at 13 V and the maximum power efficiency was 0.03 lm/W at 10 V.

关键词： organometallic compounds chemical synthesis vapour deposition photoluminescence spectroscopy electrical properties luminescence

Growth and characterization of 2-inch high quality β-Ga2O3 single crystals grown by EFG method

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Journal of Semiconductors 2018年第8期39卷 27-31页

作者： Shengnan Zhang Xiaozheng Lian Yanchao Ma Weidan Liu Yingwu Zhang Yongkuan Xu Hongjuan Cheng Electronic Material Research Institute of Tianjin Tianjin 300220 China

β-GaOis an ultra-wide band-gap semiconductor with promising applications in UV optical detectors,Schottky barrier diodes, field-effect transistors and substrates for light-emitting diodes. However, the preparation of large β-GaOcrystals is undeveloped and many properties of this material have not been discovered yet. In this work, 2-inch β-GaOsingle crystals were grown by using an edge-defined film-fed growth method. The high quality of the crystal has been proved by high-resolution X-ray diffraction with 19.06 arcsec of the full width at half maximum. The electrical properties and optical properties of both the unintentionally doped and Si-doped β-GaOcrystals were investigated systematically.

关键词： β-Ga_2O_3 single crystal high quality doping electrical properties optical properties

Interfacial passivation of n-ZnO/p-Si heterojunction by CuI thin layer

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Journal of Semiconductors 2018年第12期39卷 131-134页

作者： Chao Xiong Jin Xiao Lei Chen Wenhan Du Weilong Xu Dongdong Hou School of electrical and Photoelectronic Engineering Changzhou Institute of Technology

The ZnO/Si heterojunction diode can be integrated with the Si process, which has attracted great attention in recent years. However, the large number of interface states at the ZnO/Si heterojunction interface could adversely affect its optoelectronic properties. Here, n-type ZnO thin film was deposited on p-Si substrate for formation of an n-ZnO/p-Si heterojunction substrate. To passivate the ZnO/Si interface, a thin Cul film interface passivation layer was inserted at the ZnO/p-Si heterojunction interface. electrical characterization such as I-V and C-V characteristic curves confirmed the significant improvement of the heterojunction properties e.g. enhancement of forward current injection, reduction of reverse current and improvement of the rectification ratio. These results showed that the passivation of interface is critical for ZnO/Si heterojunctions.

关键词： ZnO/p-Si heterojunction CuI interface states electrical properties