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Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films

Journal of Materiomics 2022年第1期8卷 123-135页

作者： Dung Van Hoang Nam Hoang Vu Nga Thi Do Anh Tuan Thanh Pham Truong Huu Nguyen Jer-Lai Kuo Thang Bach Phan Vinh Cao Tran Laboratory of Advanced Materials University of ScienceHoChiMinh City700000Viet Nam Vietnam National University HoChiMinh City700000Viet Nam HoChiMinh City Institute of Physics HoChiMinh City700000Viet Nam Institute of Atomic and Molecular Sciences Academia SinicaTaipei10617Taiwan Center for Innovative Materials and Architectures(INOMAR) HoChiMinh City700000Viet Nam Faculty of Materials Science&Technology University of ScienceHoChiMinh City700000Viet Nam

This paper distinguished hydrogen roles to improve electron mobility and carrier concentration in ZnO and Al doped ZnO sputtered films.By combining experimental evidences and theoretical results,we find out that hydrogen located at oxygen vacancy sites(H_(O))is the main factor gives rise to increase simultaneously mobility and carrier concentration which has not been mentioned before.Introducing appropriate hydrogen content during sputtering not only results in crystalline relaxation but also supports doping Al into ZnO,increasing carrier concentration and electron mobility in the film.First principles calculations confirmed hydrogen substitutional stability for oxygen vacancy,significantly reducing electron conductivity effective mass and hence increasing electron mobility.In particular,0.8%hydrogen partial pressure ratio achieved 61 cm^(2)V^(-1)s^(-1)maximum electron mobility,optical transmittance above 82%in visible and near-infrared regions,and 2×10^(20) cm^(-3)carrier concentrations for H-Al co-doped ZnO film.These values approach ideal electrical and optical properties for transparent conducting oxide films.The presence of one maximum electron mobility was attributed to competition between increasing mobility due to restoring effective electron mass and hydrogen passivation of native defects,and decreased electron mobility due to electron-phonon scattering.

关键词： High electron mobility Hydrogen roles Passivation effects effective electron mass DFT calculations Doped ZnO thin Film

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Lowering plasma frequency by enhancing the effective mass of electrons: A route to deep sub-wavelength metamaterials

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Chinese Physics B 2013年第8期22卷 589-595页

作者：秦刚王甲富闫明宝陈维陈红雅李勇峰 College of electronic Information Engineering Xi'an Technological University College of Science Air Force Engineering University

Deep sub-wavelength metamaterials are the key to the further development of practical metamaterials with small volumes and broadband properties. We propose to reduce the electrical sizes of metamaterials down to more sub-wavelength scales by lowering the plasma frequencies of metallic wires. The theoretical model is firstly established by analyzing the plasma frequency of continuous thin wires. By introducing more inductance elements, the effective electron mass can be enhanced drastically, leading to significantly lowered plasma frequencies. Based on this theory, we demonstrate that both the electric and the magnetic plasma frequencies of metamaterials can be lowered significantly and thus the electrical sizes of metamaterials can be reduced to more sub-wavelength scales. This provides an efficient route to deep sub-wavelength metamaterials and will give rigorous impetus for the further development of practical metamaterials.

关键词： metamaterials deep sub-wavelength plasma frequency effective electron mass

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