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effective lifetime Experimental Measurement under External Magnetic Field in Transient Dynamic State by Open Circuit Voltage Decay Method

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Energy and Power Engineering 2020年第12期12卷 709-715页

作者： Nazé Yacouba Traoré Raguilignaba Sam Alain Diasso Bernard Zouma François Zougmoré University of Nazi Boni Department of physic Units of Sciences and Technology Bobo Dioulasso Burkina Faso University of Joseph Ki-Zerbo Department of Physic Laboratory of Materials and Environment Units of Sciences and Technology Ouagadougou Burkina Faso University of Ouagadougou Department of Physic Laboratory of Thermal and Renewable Energy Units of Sciences and Technology Ouagadougou Burkina Faso

In this work, we present an experimental transient 3-Dimensionnal study for the minority charge carriers’ effective lifetime measurement under magnetic field in transient dynamic state. The magnitude of the magnetic field B is varied from 0 mT to 0.03 mT. The method used is mainly based on the open circuit voltage decay method. The solar cell is injected by a low electrical excitation which protects against capacitance effects. Our approach is based on the open circuit voltage decay response analysis. From an experimental set-up, we get the transient voltage data on a digital scope. The data are used for plotting transient voltage decay curves. The curves obtained and analyzed are fitted in their linear zone. This zone presents an ideal decay which permits to get good values of lifetime. The slope of the linear decay is inversely proportional to effective lifetime. The results of fitting permit determinate the effective charge carriers’ lifetime directly. The results obtained are then presented and analyzed. The observations indicate that the charge carriers effective lifetime decrease when the magnetic field increases.

关键词： effective lifetime Electrical Excitation Frequential Dynamic Regime Magnetic Field

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Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers

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Chinese Physics B 2013年第5期22卷 462-466页

作者：任胜东李斌成高丽峰王谦 Institute of Optics and Electronics Chinese Academy of Sciences University of the Chinese Academy of Sciences

A combined frequency-swept and quasi-time-domain photocarrier radiometry （PCR） technique was developed to characterize thermally annealed silicon wafers with B＋, P＋, and As＋ ion implantation at doses ranging from 1 ×1011 cm-2 to 1 ×1016 cm-2. The implantation dose dependence of the PCR amplitude, the frequency dependencies of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze all the ion-implanted silicon samples. The dependence of the effective lifetime on the implantation dose has been investigated and shown to be related to the trap density and the lifetime extracted from the transient PCR signals.

关键词： photocarrier radiometry ion implantation effective lifetime silicon

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A novel method to enhance the gettering efficiency in p-type Czochralski silicon by a sacrificial porous silicon layer

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Journal of Semiconductors 2011年第3期32卷 6-9页

作者：张彩珍王永顺汪再兴 School of Electronic and Information Engineering Lanzhou Jiaotong University

A new two-step phosphorous diffusion gettering（TSPDG） process using a sacrificial porous silicon layer（PSL） is *** to a decrease in high temperature time,the TSPDG（PSL） process weakens the deterioration in performances of PSL,and increases the capability of impurity clusters to dissolve and diffuse to the gettering *** means of the TSPDG（PSL） process under conditions of 900℃/60 min ＋ 700℃/30 min,the effective lifetime of minority carriers in solar-grade（SOG） Si is increased to 14.3 times its original value,and the short-circuit current density of solar cells is improved from 23.5 o 28.7 mA/cm2,and the open-circuit voltage from 0.534 to 0.596 V along with the transform efficiency from 8.1%to 11.8%,which are much superior to the results achieved by the PDG（PSL） process at 900℃for 90 min.

关键词： two-step phosphorous diffusion gettering effective lifetime porous silicon layer solar-grade Si

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