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Quasi-Monoenergetic electron Beam Generation from Nanothickness Solid Foils Irradiated by Circular-Polarization Laser Pulses

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Chinese Physics Letters 2014年第7期31卷 132-136页

作者：苏恒毅黄永盛王乃彦汤秀章鲁巍 High Power Excimer Laser Laboratory China Institute of Atomic Energy Beijing 102413 Department of Engineering Physics Tsinghua University Beijing 100084

Ultrashort 10^22-10^24 W/cm^2 laser pulses will offer the possibility of producing monoenergetic electron beams in the Ge V - Te V level in the future. A laser-electron acceleration scheme is proposed by the interaction between a thin solid foil and an ultra-intense laser pulse for a0 ≥ 800σ0, where ao is the normalized laser field and σ0 is the normalized plasma surface density. The energy of the electrons as a function of time can be described by a simple model which indicates that an exponential relationship exists between the energy and the normalized time τ. A quasi-monoenergetic high density electron beam with 1.3 Ge V energy and a 2.2% energy spread has been predicted for a0 = 223.5 by particle-in-cell simulations. Characteristics of the ultra-high density electron layer formed in the early period of the acceleration are discussed.

关键词： electron beams MONOENERGETIC radiation LASER pulses PLASMA density electron accelerators

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Single-ZnO-Nanobelt-Based Single-electron Transistors

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Chinese Physics Letters 2014年第6期31卷 175-177页

作者：纪晓凡徐征曹硕邱康生唐静张喜田许秀来 Institute of Optoelectronics Technology Beijing Jiaotong University Beijing 100044 Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 Heilongjiang Key Laboratory for Low-Dimensional System and Mesoseopic Physics School of Physics and Electronic Engineering Harbin Normal University Harbin 150025

We fabricate single electron transistors based on a single ZnO nanobelt using standard micro-fabrication tech- niques. The transport properties of the devices are characterized at room temperature and at low temperature （4.2 K）. At room temperature, the source-drain current increases linearly as the bias voltage increases, indicating a good ohmic contact in the transistors. At 4.2K, a Coulomb blockade regime is observed up to a bias voltage of a few millivolts. With scanning the back gate voltage, Coulomb oscillations can be clearly resolved with a period around 1 V. From the oscillations, the charging energy for the single electron transistor ＆ calculated to be about lOmeV, which suggests that confined quantum dots exist with sizes around 35nm in diameter. The irregular Coulomb diamonds are observed due to the multi-tunneling junctions between dots in the nanobelt.

关键词： electron accelerators FIELD-effect transistors NANOBELTS RESEARCH TRANSPORT theory (Mathematics) NANOSTRUCTURED materials ATOMIC structure CONDENSED matter -- Electric properties

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Geometric Scaling in New Combined Hadron-electron Ring Accelerator Data

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Chinese Physics Letters 2014年第10期31卷 37-41页

作者：周晓娇齐恋康林周代翠向文昌 College of Physics and electronics Science Guizhou Normal University Guiyang 550001 Institute of Particle Physics Huazhong Normal University Wuhan 430079

We study the geometric scaling in the new combined data of the hadron-electron ring accelerator by using the Golec-Biernat-Wfisthoff model. It is found that the description of the data is improved once the high accurate data are used to determine the model parameters. The value of xo extracted from the fit is larger than the one from the previous study, which indicates a larger saturation scale in the new combined data. This makes more data located in the saturation region, and our approach is more reliable. This study lets the saturation model confront such high precision new combined data, and tests geometric scaling with those data. We demonstrate that the data lie on the same curve, which shows the geometric scaling in the new combined data. This outcome seems to support that the gluon saturation would be a relevant mechanism to dominate the parton evolution process in deep inelastic scattering, due to the fact that the geometric scaling results from the gluon saturation mechanism.

关键词： electron accelerators SCALING laws (Statistical physics) GLUONS PARTONS INELASTIC scattering

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