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Realizing p-type performance in low-thermal-conductivity BiSbSe_(3) via lead doping

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Rare Metals 2023年第11期42卷 3601-3606页

作者： Si-Ning Wang Han-Chen Lu Du-Jiang Li Yang Jin Xing-Yi Li Yan Yan Kai Gu Yu-Ting Qiu Li-Dong Zhao School of Materials Science and Engineering Beihang UniversityBeijing100191China Flying College Beihang UniversityBeijing100191China School of Energy and Power Engineering Beihang UniversityBeijing100191China School of Mechanical Engineering and Automation Beihang UniversityBeijing100191China Beihang School Beihang UniversityBeijing100191China Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province(2021E10022) Hangzhou Innovation Institute of Beihang UniversityHangzhou310051China

BiSbSe_(3) is an intrinsic n-type thermoelectric material,which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure,and it exhibits excellent thermoelectric properties in the midtemperature region.However,there is little research on p-type BiSbSe_(3).This work realized the successful preparation of p-type BiSbSe_(3) through Pb doping.The thermoelectric transport properties of Pb-doped p-type BiSbSe_(3)were investigated.Pb doping could further reduce the thermal conductivity of BiSbSe_(3).All Pb-doped samples exhibited and maintained stable p-type transmissionthroughout the working temperature range(300-723 K).This work proves that Pb can be successfully used as a p-type dopant for BiSbSe_(3).

关键词： dopant doping conductivity

Enhanced magnetic properties of SmCo/FeCo nanocomposite magnets by doping eutectic Sm-Ni alloy

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Rare Metals 2023年第6期42卷 1829-1835页

作者： Shi-Zhong An Xiao-Sen Li Wu-Hui Li Gui-Hong Lv Feng-Zhang Ren School of Materials Science and Engineering Henan University of Science and TechnologyLuoyang471023China Henan Key Laboratory of Nonferrous Materials Science and Processing Technology Longmen LaboratoryProvincial and Ministerial Co-Construction of Collaborative Innovation Center for Non-Ferrous Metal New Materials and Advanced Processing TechnologyLuoyang471023China

In this work,we prepared SmCo/FeCo nanocomposite magnets with an enhanced magnetic performance by doping eutectic Sm-Ni alloy.The magnets without Sm-Ni alloy,with a grain size of 5-12 nm and an average size of~ 9 nm,are composed of Sm_(2)Co_(17) phase and FeCo phase,leading to a relatively low remanence of 0.0365A·m^(2)·g^(-1) and coercivity of 0.15 T,respectively.After doping 2.5 wt% Sm-Ni alloy,there is no obvious change on the grain size of SmCo/FeCo magnets.

关键词： magnets doping SmCo

Research on the properties of ZnO_(1-x)S_(x) thin films modified by sulfur doping for CIGS solar cells

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Optoelectronics Letters 2022年第11期18卷 678-682页

作者： SUN Hang XUE Yuming WANG Luoxin GUO Qing LI Penghai School of Integrated Circuit Science and Engineering Tianjin University of TechnologyTianjin 300384China

ZnO_(1-x)S_(x) thin films modified by sulfur doping were prepared on glass substrates by chemical bath deposition(CBD) for studying the effect of thiourea concentration on the thin film properties. The obtained ZnO_(1-x)S_(x) thin films were characterized by scanning electron microscopy(SEM), which shows the surfaces of ZnO_(1-x)S_(x) thin films deposited under the thiourea concentration of 0.14 M are more compact. X-ray diffraction(XRD) measurement shows that the ZnO_(1-x)S_(x) thin films with hexagonal crystal structure had strong diffraction peaks and better crystallinity. The optical transmittance of the ZnO_(1-x)S_(x) thin films with 0.14 M thiourea concentration is above 80% in the wavelength range of 300-900 nm. According to the measurement results from spectrophotometer, the ZnO_(1-x)S_(x) band gap energy value Eg varies nonlinearly with different S/(S+O) ratio x, and increases with the increase of x. There is a band gap value of 2.97 eV in the ZnO_(1-x)S_(x) thin films deposited under 0.14 M thiourea concentration. Therefore, the thin films have better structural, optical and electric properties, and are more suitable for the buffer layers of copper indium gallium selenide(CIGS) thin film solar cells.

关键词： properties doping thiourea

Molecular doping for persistent afterglow

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Science China Chemistry 2022年第5期65卷 831-833页

作者： Meiqi Dai Dongpeng Yan Beijing Key Laboratory of Energy Conversion and Storage Materials Key Laboratory of RadiopharmaceuticalsMinistry of EducationCollege of ChemistryBeijing Normal UniversityBeijing 100875China Green Catalysis Center College of ChemistryZhengzhou UniversityZhengzhou 450001China

Due to the long emissive lifetime and large Stokes shift,room temperature phosphorescence (RTP) and related materials (including purely organic compounds and organicinorganic hybrids) have attracted recent attention f... 详细信息

关键词： optoelectronic phosphor doping

Effects of Sb-doping on the grain growth of CIGS thin films fabricated by electrodeposition

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Optoelectronics Letters 2022年第9期18卷 530-534页

作者： SUN Ding ZHANG Yuhong WANG Lingqun ZHANG Li School of Electrical and Computer Engineering Jilin Jianzhu UniversityChangchun 130118China Key Laboratory of Photoelectronic Thin Film Devices and Technology Institute of Photo Electronics Thin Film Devices and TechnologyNankai UniversityTianjin 300071China

Cu(In Ga)Se2(CIGS) solar cells become one of the most important thin film photovoltaic devices thus far. The doping of Sb has improved the grain size of CIGS thin film and therefore led to the enhancement of solar cell efficiency. Various approaches have been used for the Sb doping. Not many reports of electrodeposition of In, Ga and Sb alloy have been reported. In this work, the Sb thin film was coated over Cu film surface prior to the In and Ga deposition in order to form a Cu/Sb/In/Ga metal precursor. After selenization, the Sb doped CIGS film was prepared. The structure and morphology of Sb doped CIGS films were investigated compared with the undoped CIGS reference samples. A modified selenization method was proposed, which improved the grain size. Finally, the conversion efficiency of Sb doped CIGS based solar cells has been improved by 1.02%.

关键词： CIGS doping film

Recent progress on the modification of high nickel contentNCM:Coating,doping,and single crystallization

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Interdisciplinary Materials 2022年第3期1卷 330-353页

作者： Junqing Yan Hao Huang Junfan Tong Wei Li Xiaohang Liu Haoxuan Zhang Heqin Huang Weidong Zhou State Key Laboratory of Organic-Inorganic Composites Beijing Advanced Innovation Center for Soft Matter Science and EngineeringBeijing University of ChemicalBeijingChina Department of Chemical Catalysts&Battery Materials BASF Advanced Chemicals Co.Ltd.BASF(China)Co.Ltd.ShanghaiChina

High nickel content layered cathodes,represented by NCM(LiNi_(x)Co_(y)Mn_(z)O_(2),x+y+z=1),are now widely employed in the market of electric vehicles,owing to their high energy density.With the gradual increase of nickel content and capacity,the issues on cycling life and safety become more serious.In this review,various strategies for improving the performance of high nickel NCM are summarized on the aspects of surface coating,ionic doping,and singlecrystal NCM.The coating strategy was separately described according to the physical property of coating species,including inert material coating,Li^(+)-conductor coating,electronic conductor coating,and mixed conductor coating.These coating species help to suppress the interfacial oxidation of electrolytes by NCM,improving the cycling life and safety.The elemental doping in the crystal lattice of NCM is then presented in the aspects of cation,anion,and mixed-ion doping,which are beneficial to stabilize the layered structure during charge–discharge and so promote the electrochemical performance.In quite recent years,the strategy of single-crystal NCM was demonstrated to be a promising pathway,owing to the dramatically reduced surface area and grain boundary.Finally,the remaining unsolved challenges and future strategies for further development of NCM cathode materials are outlined.

关键词： coating doping high nickel NCM layered cathode lithium-ion batteries

A"turn-on"fluorescent sensor for Pb^(2+)detection based on nitrogen doping carbon dots

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Chinese Journal of Structural Chemistry 2023年第4期42卷 13-17页

作者： Jianan Li Wenbo Sun Xinyong Li Chong Peng National Engineering Research Center of Industrial Wastewater Detoxication and Resource Recovery East China University of Science and TechnologyShanghai200237China School of Resources and Environmental Engineering Shandong University of TechnologyZibo255000China State Key Laboratory of Fine Chemicals and Key Laboratory of Industrial Ecology and Environmental Engineering Dalian University of TechnologyDalian116024China School of Sensing Science and Engineering Shanghai Jiao Tong UniversityShanghai200240China Zhejiang Tiandi Environmental Protection Engineering Co. LtdHangzhou310003China

1.Introduction Due to the severe toxicity of heavy metal ions,human health and eco-system are threatened even at ultra-low concentrations[1].Specially,Pb^(2+)arouses more significant concern as its bio-accumulation seriously affects brain development,reproductive systems,and cardiovascular function,consequently resulting in an irreversible damage.According to World Health Organization(WHO),the maximum allowable Pb^(2+)con-centration on the surface water should be<0.01 mg/L.Thus,consid-ering such deleterious and carcinogenic effects,the Pb^(2+)amount should be monitored to guarantee the water environment safety.Conventional methods always need complicate pretreatment.

关键词： cardiovascular irreversible doping

Thermochemical splitting of carbon dioxide by lanthanum manganites-understanding the mechanistic effects of doping

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Energy Storage and Saving 2022年第4期1卷 309-324页

作者： Harriet Kildahl Hui Cao Yulong Ding School of Chemical Engineering University of BirminghamB152TTUnited Kingdom

This review investigates the effect of different dopants on the oxygen evolution and carbon dioxide splitting abilities of the lanthanum manganites.Particular focus was placed on the lanthanide,alkaline earth metals,redox-active transition metal,and non-redox active Group 3 metals.The review suggests that a small ionic radius lanthanide on the A-site can increase the size discrepancy,leading to Mn-O_(6) octahedra tilting and more facile Mn-O bond breaking.doping the A-site with a divalent alkaline earth element can increase the valance of the transition metal,leading to greater reduction capabilities.A transition metal with one electron in the e_(g) orbital is the most effective for reduction while for oxidation,zero electrons in the high-energy e_(g) orbitals is optimal.Finally,doping of the B-site with metals such as gallium or aluminium aids in sintering resistance and allows reactivity to remain constant over multiple cycles.Higher reduction temperatures and moderate re-oxidation temperatures also promote higher fuel yields as does the active reduction of the perovskite under hydrogen,although the total energy consumption implications of this are unknown.Far more is known about the mechanism of the reduction reaction than the oxidation reaction,therefore more research in this area is required.

关键词： CO_(2)splitting Thermochemical cycle Perovskite Energy conversion doping

doping tuned anomalous Hall effect in the van der Waals magnetic topological phases Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)

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中国物理B:英文版 2023年第9期32卷 422-426页

作者：张鑫江志诚袁健侯骁飞王霞余娜邹志强刘正太夏威于振海沈大伟郭艳峰 School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Analytical Instrumentation Center School of Physical Science and TechnologyShanghaiTech UniversityShanghai 201210China National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China ShanghaiTech Laboratory for Topological Physics ShanghaiTech UniversityShanghai 201210China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The van der Waals(vdW)MnSb4Te7is a newly synthesized antiferromagnetic(AFM)topological insulator hosting a robust axion insulator state irrelative to the specific spin structure.However,the intrinsic hole doped character of MnSb_4Te_7makes the Fermi level far away from the Dirac point of about 180 meV,which is unfavorable for the exploration of exotic topological properties such as the quantum anomalous Hall effect(QAHE).To shift up the Fermi level close to the Dirac point,the strategy of partially replacing Sb with Bi as Mn(Sb_(1-x)Bi_(x))_(4)Te_(7)was tried and the magnetotransport properties,in particular,the anomalous Hall effect,were measured and analyzed.Through the electron doping,the anomalous Hall conductanceσAH changes from negative to positive between x=0.3 and 0.5,indicative of a possible topological transition.Besides,a charge neutrality point(CNP)also appears between x=0.6 and 0.7.The results would be instructive for further understanding the interplay between nontrivial topological states and the magnetism,as well as for the exploration of exotic topological properties.

关键词： anomalous Hall effect doping topological materials