检索结果-南通市图书馆

Recent advances in iron-based sulfides electrocatalysts for oxygen and hydrogen evolution reaction

在线全文

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2024年第1期35卷 181-195页

作者： Jing Mei Yuqing Deng Xiaohong Cheng Xing Wang Qi Wu State Key Laboratory of New Textile Materials and Advanced Processing Technologies Wuhan Textile UniversityWuhan 430200China Hubei Key Laboratory of Pollutant Analysis&Reuse Technology College of Chemistry and Chemical EngineeringHubei Normal UniversityHuangshi 435002China Hubei Key Laboratory of Low Dimensional Optoelectronic Materials and Devices Hubei University of Arts and ScienceXiangyang 441053China

Increasing environmental pollution and shortage of conventional fossil fuels have made it urgent to develop renewable and clean energy sources. Electrocatalytic water splitting, with its abundant raw materials, simple process, and zero carbon emission, is considered one of the most promising processes for producing carbon-neutral hydrogen which has excellent energy conversion efficiency and high gravimetric energy density. Among them, oxygen evolution reaction (OER) electrocatalysts and hydrogen evolution reaction (HER) electrocatalysts are critical to decreasing the intrinsic reaction energy barrier and boosting the hydrogen evolution efficiency. Therefore, it is imperative to develop and design low-cost, highly active, and stable OER and HER electrocatalysts to lower the overpotential and drive the electrocatalytic reactions. Transition metal sulfides, especially iron-based sulfides, have attracted extensive exploration by researchers as a result of its high abundance in the Earth's crust and near-metallic conductivity. Consequently, in this review, we systematically and comprehensively summarize the progress in the application of iron-based sulfides and their composites as OER and HER electrocatalysts in electrocatalysis. Detailed descriptions and illustrations of the special relationships among their composition, structure, and electrocatalytic performance are presented. Finally, this review points out the challenges and future prospects of iron-based sulfides in practical applications for designing and fabricating more promising iron-based sulfide OER and HER electrocatalysts. We believe that iron-based sulfide materials will have a wide range of application prospects as OER and HER electrocatalysts in the future.

关键词： Iron-based sulfides Electrocatalysts doping Composites Water splitting

High thermoelectric properties realized in earth abundant Bi_(2)S_(3) bulk materials via Se and Cl co-doping in solution synthesis process

在线全文

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2022年第5期100卷 51-58页

作者： Jun Guo Yu-Ke Zhu Lin Chen Zi-Yuan Wang Zhen-Hua Ge Jing Feng Faculty of Materials Science and Engineering Kunming University of Science and TechnologyKunming 650093China

Bi_(2)S_(3)-based alloys are considered promising thermoelectric materials due to their large Seebeck coefficient and low lattice thermal conductivity.However,low electrical conductivity usually leads to poor electrical transport properties,which seriously restricts their further application in thermoelectric refrigeration and/or power generation.In this work,Bi_(2)S_(3) with high electrical transport properties is synthesized hydrothermally via Se and Cl co-doping.The maximum electrical conductivity value of 483 S cm^(-1) was obtained for the Bi_(2)S_(2.4)Se_(0.4)Cl_(0.20) sample at room temperature.The significant improvement of electrical conductivity gives rise to a high average power factor of 411μW m^(-1) K^(-2) during the measuring temperature range and a peak value of 456μW m^(-1) K^(-2) at 673 K.Benefiting from the largely improved electrical transport properties,a superior ZT value of approximately 0.66 and ZTave.of 0.36 were obtained for Bi_(2)S_(2.4)Se_(0.4)Cl_(0.20),and the theoretically calculated conversion efficiency reached 5.7%.The results indicate that Bi_(2)S_(3) is a promising candidate for thermoelectric applications at medium temperatures.

关键词： Bismuth sulfide Electrical conductivity doping Thermal conductivity

Donor-acceptor conjugated copolymer with high thermoelectric performance:A case study of the oxidation process within chemical doping

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2022年第2期31卷 80-88页

作者：陈凉君王维肖生强唐新峰 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China

The doping process and thermoelectric properties of donor-acceptor(D-A)type copolymers are investigated with the representative poly([2,6-4,8-di(5-ethylhexylthienyl)benzo[1,2-b;3,3-b]dithiophene]3-fluoro-2-[(2-ethylhexyl)-carbonyl]thieno[3,4-b]thiophenediyl))(PTB7-Th).The PTB7-Th is doped by Fe Cl;and only polarons are induced in its doped films.The results reveal that the electron-rich donor units within PTB7-Th lose electrons preferentially at the initial stage of the oxidation and then the acceptor units begin to be oxidized at a high doping concentration.The energy levels of polarons and the Fermi level of the doped PTB7-Th remain almost unchange with different doping levels.However,the morphology of the PTB7-Th films could be deteriorated as the doping levels are improved,which is one of the main reasons for the decrease of electrical conductivity at the later stage of doping.The best electrical conductivity and power factor are obtained to be 42.3 S·cm^(-1);and 33.9μW·mK^(-1),respectively,in the doped PTB7-Th film at room temperature.The power factor is further improved to 38.3μW·mK^(-1);at 75℃.This work may provide meaningful experience for development of D-A type thermoelectric copolymers and may further improve the doping efficiency.

关键词： donor-acceptor copolymer doping oxidization process thermoelectric performance

Recent Advances in Spin-coating Precursor Mediated Chemical Vapor Deposition of Two-Dimensional Transition Metal Dichalcogenides

在线全文

学校读者我要写书评

暂无评论

Precision Chemistry

Precision Chemistry 2024年第7期2卷 282-299页

作者： Dingyi Shen Yejun Jin Zucheng Zhang Rong Song Miaomiao Liu Wei Li Xin Li Ruixia Wu Bo Li Jia Li Bei Zhao Xidong Duan Hunan Key Laboratory of Two-Dimensional Materials State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan University410082 ChangshaChina Key Laboratory of Quantum Materials and Devices of Ministry of Education School of PhysicsSoutheast UniversityNanjing 211189China Key Laboratory of Two-Dimensional Materials State Key Laboratory for Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan University410082 ChangshaChina

Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.

关键词： Spin-coating Chemical vapor deposition Liquid precursor Substrate Two-dimensional materials Heterostructure doping Film

Photoelectric State with Long-Term Relaxation in CdTe:(Ag, Cu, Cd) and Sb₂Se₃:Se Photovoltaic Films

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Applied Mathematics and Physics 2024年第1期12卷 43-51页

作者： Ozodbek Ravshanboy o‘g‘li Nurmatov Dilkhumor Tolibjonovna Mamadieva Nosirjon Khaydarovich Yuldashev Department of Physics Ferghana Polytechnic Institute Ferghana Uzbekistan

The results of an experimental study of long-term relaxation of the photoelectret state of polycrystalline CdTe:(Ag, Cu, Cd) and Sb2Se3:Se films with an anomalous photovoltaic property are presented. In such films, the residual photovoltage is caused by the separation of photocarriers by the built-in electrostatic field of the near-surface region of space charges and their asymmetric capture by deep levels of impurities or complexes, including impurity atoms and intrinsic defects, both in the bulk and on the surface of crystal grains. It has been shown that in activated films, a two-step exponential temporary relaxation of the initial photovoltage of the order of VAPV ≈ (500-600) V is detected, and only 10% of it experiences long-term relaxation (t ≈ 100-120 min).

关键词： Thin Polycrystalline Films doping Deep Centers Anomalous Photovoltage Photoelectret State Long-Term Relaxation

Thickness Dependence of doping Level in Conducting Polymer Films:the Optical Contrast Optimization in Electrochromism as a Case Study

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Journal of Chemistry 2022年第5期40卷 597-602页

作者： Jianqiao Wang Huanhuan Zhang Yuguang Ma State Key Laboratory of Luminescent Materials and Devices Institute of Polymer Optoelectronic Materials and DevicesSouth China University of TechnologyNo.381 Wushan RoadTianhe DistinctGuangzhouGuangdong510640 China

doping plays an essential role in the properties of conducting polymers.Film thickness not only has a direct influence on their photoelectric properties,but also affects the doping ability,which may lead to the decline of capacitance and electrochromic properties caused by incomplete doping.Therefore,it is essential to study the quantitative relationship between doping level and film thickness in application.Herein,empirical formula between doping level and thickness was obtained by studying the spectroelectrochemistry behaviors of two different electrochromic materials,poly(N,N'-bis(3,5-(2-thienyl)-phenyl)-1,6,7,12-tetrachloroperylene-3,4,9,10-perylenetetracarboxylic diimide)(poly(Th-Cl-PBI))and poly(3,4-ethylenedioxythiophene)(PEDOT).The doping level is verified to be correlated to the reciprocal of the 3^(rd)power of film thickness.Experimental results fit these formulas very well,giving correlation coefficient R^(2)higher than 0.99.The optical contrast prediction of these two electrochromic materials is also used to verify this relationship formula.For the first time,we quantitatively connect these two important parameters of conducting polymers,doping level and thickness.

关键词： doping Electrochemistry Polymers Electrochromism Thickness dependence

Synthesis of Co_(4)S_(3)/Co_(9)S_(8) nanosheets and comparison study toward the OER properties induced by different metal ion doping

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2022年第3期33卷 1395-1402页

作者： Fenghua Chen Zhaoqian Zhang Weiwei Liang Xiaoyun Qin Zhen Zhang Liying Jiang College of Materials and Chemical Engineering Zhengzhou University of Light IndustryZhengzhou 450002China Tianjin Key Laboratory of Molecular Optoelectronic Department of Chemistry School of ScienceTianjin UniversityTianjin 300072China School of Electrical and Information Engineering Zhengzhou University of Light IndustryZhengzhou 450002China

Regulation of chemical composition and nanostructure, such as the introduction of dopant into two-dimensional nanomaterials, is a general and valid strategy for the efficient electrocatalyst design. In this work, Co_(4)S_(3)/Co_(9)S_(8) nanosheets, with an ultrathin layer structure, were successfully synthesized via an efficient solvothermal process combined with ultrasonic exfoliation. Different metal ions (M = Fe^(3+), Cr^(3+), Mn^(2+) and Ni^(2+)) were then doped by a simple cation exchange method and the effects of different dopants on the OER activities of Co_(4)S_(3)/Co_(9)S_(8) NS were further investigated in alkaline media. The corresponding results implied that M-doped Co_(4)S_(3)/Co_(9)S_(8) NS (M = Fe^(3+), Cr^(3+), Mn^(2+) and Ni^(2+)) exhibited different electrocatalytic properties. Evidenced by XPS spectra, the different OER activities were mainly aroused by the redistribution of charge at the interface due to an electronic interaction between the doped metal ions and Co_(4)S_(3)/Co_(9)S_(8) NS.

关键词： Chalcogenides Chemical synthesis Catalytic properties doping Nanosheets OER

Theoretical analysis on GaAs sub-cell doping concentration for triple-junction solar cells irradiated by proton based on TCAD simulation

在线全文

学校读者我要写书评

暂无评论

Optoelectronics Letters 2022年第12期18卷 723-729页

作者： LI Junwei JIA Weimin SHI Chengying WANG Zujun LI Zhengcao Key Lab of Advanced Materials(MOE) School of Materials Science and EngineeringTsinghua UniversityBeijing100084China Xi’an Research Institute of High-Technology Xi’an710025China Northwest Institute of Nuclear Technology Xi’an710024China

The degradation on the GaInP/GaAs/Ge triple-junction solar cells was irradiated by proton, and the solar cells with various GaAs sub-cell doping concentrations are modeled by the technology computer aided design(TCAD) simulation. The degradation results of related electrical parameters and external quantum efficiency(EQE) are studied. The degradation mechanism irradiated by proton is discussed. The short-circuit current, maximum power and conversion efficiency decrease with the increasing of GaAs sub-cell doping concentration. When the base doping concentration of GaAs sub-cell is 1×1016cm-3, the degradation of short-circuit current is less than that of other base doping concentrations. Furthermore, under proton irradiation, with the increase of doping concentration of GaAs sub-cell, the open-circuit voltage first increases and then decreases. Meanwhile, when the base doping concentration of GaAs sub-cell is 2×10^(17)cm^(-3), the degradation of open-circuit voltage is less than that of other base doping concentrations. The research will provide the basic theories and device simulation method for GaInP/GaAs/Ge triple-junction solar cells radiation damage evaluation study and radiation hardening, and can provide guidance for the production of triple-junction solar cells in orbit.

关键词： doping irradiated junction

First-principles calculations to study the optical/electronic properties of 2D VS2 with Z doping(Z=N,P,As,F,Cl and Br)

在线全文

学校读者我要写书评

暂无评论

Progress in Natural Science:Materials International 2022年第2期32卷 236-241页

作者： Yuanyuan Cui Wei Fan Yujie Ren Guang Yang Yanfeng Gao School of Materials Science and Engineering Shanghai University East China Institute of Computing Technology

Monolayer VS2is expected to be an encouraging candidate for optoelectronic devices owing to its excellent optical/electrical performance.In this paper,first-principles calculations were conducted to figure out the optical/electrical performance of 2 D VS2doped with Z doping(Z=N,P,As,F,Cl and Br).The results show that there was a downward trend in formation energies when the doping element ranged from left to right and from bottom to top in the periodictable of elements.VS2became more conductive with N,P and As doping,and transited from the semiconducting to metallic state with F,Cl and Br doping.For the optical properties,N,P,As and Br doping reduced the reflectivity of pristine VS2in the near-infrared region(0.6 eV-1.6 eV).Moreover,P,F,Cl and Brdoping reduced the migration energy barrier of Li atoms in VS2,which may help to design the rechargeable Li ion batteries with high rate capability.

关键词： 2D VS 2 doping Diffusion barriers First-principles calculations Optical properties