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Analog ferroelectric domain-wall memories and synaptic devices integrated with Si substrates

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Nano Research 2022年第4期15卷 3606-3613页

作者： Chao Wang Tianyu Wang Wendi Zhang Jun Jiang Lin Chen Anquan Jiang State Key Laboratory of ASIC&Systems School of MicroelectronicsFudan UniversityShanghai 200433China

Brain-inspired neuromorphic computing can overcome the energy and throughput limitations of traditional von Neumann-type computing systems,which requires analog updates of their artificial synaptic strengths for the best recognition performance and low energy consumption.Here,we report synaptic devices made from highly insulating ferroelectric LiNbO_(3)(LNO)thin films bonded to SiO_(2)/Si wafers.Through the creation/annihilation of periodically arrayed antiparallel domains within LNO nanocells,which are stimulated using positive/negative voltage pulses(synaptic plasticity),we can modulate the synaptic conductance linearly by controlling the number of the conducting domain walls.The multilevel conductance is nonvolatile and reproducible with negligible dispersion over 100 switching cycles,representing much better performance than that of random defect-based nonlinear memristors,which generally exhibit large-scale resistance dispersion.The simulation of a neuromorphic network using these LNO artificial synapses achieves 95.6%recognition accuracy for faces,thus approaching the theoretical yield of ideal neuromorphic computing devices.

关键词： LiNbO_(3)(LNO) domain wall memristor synaptic plasticity recognition

Pressure-tuning domain-wall chirality in noncentrosymmetric magnetic Weyl semimetal CeAlGe

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Science China(Physics,Mechanics & Astronomy) 2023年第3期66卷 121-129页

作者： Xiaobo He Yuke Li Hai Zeng Zengwei Zhu Shiyong Tan Yongjun Zhang Chao Cao Yongkang Luo Wuhan National High Magnetic Field Center and School of Physics Huazhong University of Science and TechnologyWuhan 430074China School of Physics and Hangzhou Key Laboratory of Quantum Matter Hangzhou Normal UniversityHangzhou 311121China Science and Technology on Surface Physics and Chemistry Laboratory Mianyang 621908China Institute for Advanced Materials Hubei Normal UniversityHuangshi 435002China Center for Correlated Matter and School of Physics Zhejiang UniversityHangzhou 310058China

Topological magnetic Weyl semimetals have been proposed to host controllable chiral domain walls which bear a great prospect in device applications. To exploit them in applications, it is important to have a proper way to tune and manipulate these domain walls. One possible means is through magnetoelastic coupling. The involvement of rare earth in the lately proposed RAl X(R =rare earth, X = Si and Ge) family magnetic Weyl semimetals may provide such a platform. Here we present the transport and thermodynamic properties of Ce Al Ge under hydrostatic pressure. We find that pressure enhances the antiferromagnetic exchange in Ce Al Ge but essentially retains its magnetic structure. A large topological Hall effect with a pronounced loop shape is observed within the magnetically ordered state, and it splits into two regions under pressure. Such an unusual electromagnetic response is inferred to be a consequence of chiral magnetic domain walls. The unprecedented concomitance of its evolution under pressure and the reentrance of antiferromagnetic order strongly suggest the capability of switching on/off this electromagnetic response in noncentrosymmetric magnetic Weyl semimetals via magnetoelastic coupling.

关键词： magnetic Weyl semimetals loop-shaped topological Hall effect domain wall Weyl point magnetoelastic coupling

domain wall dynamics in magnetic nanotubes driven by an external magnetic field

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Chinese Physics B 2018年第7期27卷 527-530页

作者：李再东胡月川贺鹏斌孙琳琳 Department of Applied Physics Hebei University of Technology Key Laboratory of Electronic Materials and Devices of Tianjin School of Electronics and Information EngineeringHebei University of Technology School of Physics and Electronics Hunan University School of Public Management Beihang University

We use the Landau-Lifshitz-Gilbert equation to investigate field-driven domain wall propagation in magnetic nan- otubes. We find that the distortion is maximum as the time becomes infinite and the exact rigid-body solutions are obtained analytically. We also find that the velocity increases with increasing the ratio of inner radius and outer radius. That is to say, we can accelerate domain wall motion not only by increasing the magnetic field, but also by reducing the thickness of the nanotubes.

关键词： domain wall magnetic nanotubes magnetic field

Ferroelectric domain wall memory

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Chinese Physics B 2023年第12期32卷 14-20页

作者：李一鸣孙杰江安全 State Key Laboratory of ASIC&System School of MicroelectronicsFudan UniversityShanghai 200433China

Ferroelectric domain walls appear as sub-nanometer-thick topological interfaces separating two adjacent domains in different orientations,and can be repetitively created,erased,and moved during programming into different logic states for the nonvolatile memory under an applied electric field,providing a new paradigm for highly miniaturized low-energy electronic devices.Under some specific conditions,the charged domain walls are conducting,differing from their insulating bulk domains.In the past decade,the emergence of atomic-layer scaling solid-state electronic devices is such demonstration,resulting in the rapid rise of domain wall nano-electronics.This review aims to the latest development of ferroelectric domain-wall memories with the presence of the challenges and opportunities and the roadmap to their future commercialization.

关键词： domain wall memory ferroelectric

Generation of high-energy dual-wavelength domain wall pulse with low repetition rate in an HNLF-based fiber ring laser

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Chinese Physics B 2014年第6期23卷 217-220页

作者：罗智超林振彬李金玉朱鹏飞宁秋奕邢晓波罗爱平徐文成 Laboratory of Nanophotonic Functional Materials and Devices School of Information and Optoelectronic Science and Engineering South China Normal University Department of Environmental Engineering Guangdong Industry Technical College MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science College of BiophotonicsSouth China Normal University

The generation of high-energy dual-wavelength domain wall pulse with a low repetition rate is demonstrated in a highly nonlinear fiber （HNLF）-based fiber ring laser. By introducing the intracavity birefringence-induced spectral filtering effect, the dual-wavelength lasing operation can be achieved. In order to enhance the cross coupling effect between the two lasing beams for domain wall pulse formation, a 215-m HNLF is incorporated into the laser cavity. Experimentally, it is found that the dual-wavelength domain wall pulse with a repetition rate of 77.67 kHz could be efficiently obtained through simply rotating the polarization controller （PC）. At a maximum pump power of 322 mW, the 655-nJ single pulse energy in cavity is obtained. The proposed configuration provides a simpler and more efficient way to generate high energy pulse with a low repetition rate.

关键词： fiber lasers high-energy pulse domain wall low repetition rate

domain wall state diagram for SrTiO_(3)/BaTiO_(3) superlattice structures

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Journal of Advanced Dielectrics 2023年第3期13卷 13-19页

作者： Yimei You Fengjuan Yang Pingping Wu Department of Materials Science and Engineering Xiamen Institute of Technology Xiamen Fujian 361021P.R.China The Higher Educational Key Laboratory for Flexible Manufacturing Equipment Integration of Fujian Province Xiamen Institute of Technology XiamenFujian 361021P.R.China

The domain wall structure of ferroelectric/paraelectric superlattices can be much more complex due to the influence of the superlattice stacking structure,the in-plane strain induced by the substrate and environmental temperature.In this study,we employed a phase field model to investigate the domain wall state of the SrTiO_(3)/BaTiO_(3) superlattice structure.The domain wall thickness for the SrTiO_(3)/BaTiO_(3) layer was measured using a hyperbolic function.Based on the simulation results,here,we show a domain wall state diagram to distinguish the hard and soft domain states.The polarization profiles across hard/soft domain walls were illustrated and analyzed.Our simulation results offer a useful concept for the control of the domain wall state in the ferroelectric superlattice.

关键词： domain wall superlattice stacking structure polarization distribution phase field model

Magneto-elastic waves in the orthoferrite plates induced by solitary domain wall

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Rare Metals 2007年第S1期26卷 5-9页

作者： KUZ'MENKO A P ZHUKOV E A DOBROMYSLOV M B KAMINSKII A V Pacific National University

Dynamics of domain walls(DWs) was studied in transparent thin orthoferrite samples with weak ferromagnetic ordering at subsonic and supersonic speeds.Direct measurements were made of flexural vibration amplitude in the samples studied,which were induced by a solitary DW with periodic actions of a driving magnetic field.The values of the amplitude reached 7 nm at a resonance.The formation of magnetoelastic solitons was observed and their dynamics was studied at a resonance between an elastic and a spin subsystems.Solitons lag behind the DW at the moment when the DW surpasses the sound barrier and are ahead of it at the subsonic motion.

关键词： orthoferrite domain wall magnetoelastic solitons quasiparticle excitations elastic deformation

Anomalous Josephson current in quantum anomalous Hall insulator-based superconducting junctions with a domain wall structure

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Chinese Physics B 2020年第9期29卷 487-497页

作者：闫青周彦峰孙庆丰 International Center for Quantum Materials School of PhysicsPeking UniversityBeijing 100871China Collaborative Innovation Center of Quantum Matter Beijing 100871China Department of Physics University of Texas at DallasRichardsonTexas 75080USA CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of SciencesBeijing 100190China

We theoretically study the Josephson effect in a quantum anomalous Hall insulator(QAHI)nanoribbon with a domain wall structure and covered by the superconductor.The anomalous Josephson current,the nonzero supercurrent at the zero superconducting phase difference,appears with the nonzero magnetization and the suitable azimuth angle of the domain wall.Dependent on the configuration of the domain wall,the anomalous current peaks in the Bloch type but disappears in the Néel type because the y-component of magnetization is necessary to break symmetry to arouse the anomalous current.The phase shift of the anomalous current is tunable by the magnetization,the azimuth angle,or the thickness of the domain wall.By introducing a bare QAHI region in the middle of the junction which is not covered by the superconductor,the anomalous Josephson effect is enhanced such that the phase shift can exceedπ.Thus,a continuous change between 0 andπjunctions is realized via regulating the configuration of the domain wall or the magnetization strength.As long as an s-wave superconductor is placed on the top of the QAHI with a domain wall structure,this proposal can be experimentally fabricated and useful for the phase battery or superconducting quantum bit.

关键词： anomalous Josephson current quantum anomalous Hall insulator domain wall Josephson junction

Dynamics and manipulation of ferroelectric domain walls in bismuth ferrite thin films

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National Science Review 2020年第2期7卷 278-284页

作者： Shuyu Xiao Yaming Jin Xiaomei Lu Sang-Wook Cheong Jiangyu Li Yang Li Fengzhen Huang Jinsong Zhu National Laboratory of Solid State Microstructures and Physics School Nanjing University Collaborative Innovation Center of Advanced Microstructures Nanjing University Rutgers Center for Emergent Materials and Department of Physics and Astronomy Rutgers University Shenzhen Key Laboratory of Nanobiomechanics Shenzhen Institutes of Advanced Technology Chinese Academy of Sciences Department of Mechanical Engineering University of Washington

Ferroelectric domain walls differ from domains not only in their crystalline and discrete symmetry, but also in their electronic, magnetic, and mechanical properties. Although domain walls provide a degree of freedom to regulate the physical properties at the nanoscale, the relatively lower controllability prevents their practical applications in nano-devices. In this work, with the advantages of 3D domain configuration detection based on piezoresponse force microscopy, we find that the mobility of three types of domain walls(tail-to-tail, head-to-tail, head-to-head) in(001) BiFeO3films varies with the applied electrical field. Under low voltages, head-to-tail domain walls are more mobile than other domain walls, while, under high voltages, tail-to-tail domain walls become rather active and possess relatively long average lengths. This is due to the high nucleation energy and relatively low growth energy for charged domain walls. Finally, we demonstrate the manipulation of domain walls through successive electric writings, resulting in well-aligned conduction paths as designed, paving the way for their application in advanced spintronic, memory and communication nano-devices.

关键词： domain wall ferroelectric thin film piezoresponse force microscopy dynamics