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Analysis of displacement damage effects on the charge-coupled device induced by neutrons at Back-n in the China Spallation Neutron Source

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Chinese Physics B 2023年第7期32卷 435-442页

作者：薛院院王祖军陈伟郭晓强姚志斌何宝平聂栩赖善坤黄港盛江坤马武英缑石龙 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of Physics Peking UniversityBeijing 100871China State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect Northwest Institute of Nuclear TechnologyXi’an 710024China School of Materials Science and Engineering Xiangtan UniversityXiangtan 411105China

displacement damage effects on the charge-coupled device(CCD)induced by neutrons at the back-streaming white neutron source(Back-n)in the China Spallation Neutron Source(CSNS)are analyzed according to an online irradiation experiment.The hot pixels,random telegraph signal(RTS),mean dark signal,dark current and dark signal non-uniformity(DSNU)induced by Back-n are presented.The dark current is calculated according to the mean dark signal at various integration times.The single-particle displacement damage and transient response are also observed based on the online measurement data.The trends of hot pixels,mean dark signal,DSNU and RTS degradation are related to the integration time and irradiation fluence.The mean dark signal,dark current and DSNU2 are nearly linear with neutron irradiation fluence when nearly all the pixels do not reach saturation.In addition,the mechanisms of the displacement damage effects on the CCD are demonstrated by combining the experimental results and technology computer-aided design(TCAD)simulation.Radiation-induced traps in the space charge region of the CCD will act as generation/recombination centers of electron-hole pairs,leading to an increase in the dark signal.

关键词： displacement damage effects charge-coupled device(CCD) China Spallation Neutron Source(CSNS) mechanisms technology computer-aided design(TCAD)

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Analysis of Dark Signal Degradation Caused by 1 MeV Neutron Irradiation on Backside-Illuminated CMOS Image Sensors

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Chinese Journal of Electronics 2021年第1期30卷 180-184页

作者： LIU Bingkai LI Yudong WEN Lin ZHOU Dong FENG Jie ZHANG Xiang CAI Yulong FU Jing GUO Qi Key Laboratory of Functional Materials and Devices for Special Environments Xinjiang Technical Institute of Physics and Chemistry Chinese Academy of Sciences Xinjiang Key Laboratory of Electronic Information Material and Device University of Chinese Academy of Sciences

The purpose of this work is to investigate the influence of the epitaxial layer thickness of Backside-illuminated CMOS image sensors（BSI CISs） on dark signal behaviors. BSI CISs with the high quantum efficiency and sensitivity were irradiated by 1 MeV neutron up to the fluences of 10;cm;. The displacement damage induced variations of the mean dark signal,Dark signal nonuniformity（DSNU）, dark signal spikes and Random telegraph signal（RTS） on the different epitaxial layer thicknesses are analyzed. The experimental results show that there is no obvious correlation between the degradations of dark signal parameters and the epitaxial layer thickness, suggesting that the electric-optical performance of BSI CISs can be improved by optimizing the epitaxial layer thickness.

关键词： Backside-illuminated CMOS image sensors Dark signal behaviors displacement damage effects Neutron irradiation

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