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Chinese Physics B 2011年第12期20卷 443-449页

作者：刘晓兵贾晓鹏张壮飞黄海亮周振祥马红安 State Key Laboratory of Superhard Materials Jilin University Mudanjiang Normal University

In this paper, the diamond epitaxial growth mechanism has been studied in detail by employing several types of diamond as a seed in a catalyst-graphite system under high pressure and high temperature （HPHT） conditions. We find that the diamond nucleation, growth rate, crystal orientation, and morphology are significantly influenced by the original seeds. The smooth surfaces of seeds are beneficial for the fabrication of high-quality diamond. Our results reveal that the diamond morphology is mainly determined by the original shape of seeds in the early growth stage, but it has an adjustment process during the growth and leads to well symmetry. Additionally, we have also established the growth model for the twinned diamond grown on several seeds, and proposed the possible growth processes by tracking the particular shapes of seeds before and after treatment under HPHT conditions. These results suggest that the shape-controlled synthesis of diamond with well morphology can be realized by employing certain suitable diamond seeds. This work is expected to play an important role in the preparation of trustworthy diamond-based electronic and photonic devices.

关键词： diamond nucleation morphology seed

Reaction Processes at the Initial Stage of diamond Nucleation on the Surface of Si(111)

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Chinese Physics Letters 1998年第12期15卷 910-912页

作者： XIE Fang-qing ZHANG Qing-zhe LIN Zhang-da State Key Laboratory of Surface Physics Institute of PhysicsChinese Academy of SciencesBeijing 100080

The thermal behavior of CHx(x=2,3)radicals and H atoms adsorbed on Si(111)surface was investigated by high-resolution electron-energy-loss spectroscopy,quadrupole mass spectrometry,and low-energy electron *** on the analysis of thermal desorption mass spectrometry,the initial stage of diamond nucleation on Si is *** with the result reported by Lee for diamond,it is concluded that low stability of hydrocarbon species on Si is the basic reason which results in the difficulty of diamond nucleation on perfect Si surface.

关键词： diffraction. diamond thermal

Synthesis and nitrogen content regulation of diamond in a high-pressure hydrogen-rich environment

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Chinese Physics B 2024年第6期33卷 541-546页

作者：黄国锋陈良超房超 Inner Mongolia Key Laboratory of High-pressure Phase Functional Materials Chifeng UniversityChifeng 024000China Key Laboratory of Material Physics of Ministry of Education School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China

The regulating nitrogen content of diamond in a hydrogen-rich high-temperature and high-pressure(HPHT) growth environment was systematically investigated in this work by developing three growth systems,namely, "FeNi+Ti", "FeNi+G_(3)N_(6)H_(6)",and "FeNi+Ti+C_(3)N_(6)H_(6)".Optical microscopy,infrared spectroscopy,and photoluminescence(PL)spectroscopy measurements were conducted to analyze the spectroscopic characteristics of diamonds grown in these three *** our analysis,it was demonstrated that the presence of hydrogen in the sp^(3) hybrid C-H does not directly affect the color of the diamond and facilitates the increase of the nitrogen-vacancy(NV) center concentration in a highnitrogen-content *** addition,titanium plays an important role in nitrogen removal,while its impact on hydrogen doping within the diamond lattice is *** importantly,by regulating the ratio of nitrogen impurities that coexist in the nitrogen and hydrogen HPHT environment,the production of hydrogenous Ⅱa-type diamond,hydrogenous Ib-type diamond,and hydrogenous high-nitrogen-type diamonds was achieved with a nitrogen content of less than 1 ppm to 1600 ppm.

关键词： diamond HPHT superhard material hydrogen-rich environment

Influences of H^(+)Implantation on the Boron-Doped Synthesized by Chemical Vapor Deposition diamond Films

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Chinese Physics Letters 2000年第9期17卷 686-688页

作者： WANG Shuang-Bao ZHU Pei-Ran WANG Yu-Guang FENG Ke-An Institute of Physics Chinese Academy of SciencesBeijing 100080

diamond films(DF)were preliminarily B doped in situ during chemical vapor ***,the films were implanted with 120keV H^(+)to dose of 5×10^(14)~5×10^(16)cm^(-2).After the implantation,the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite *** is known that the formation of H-B pairs plays an important pole in property ***,for larger dose cases,the electrical resistance of DF is influenced by radiation damage and/or non-diamond *** addition to them,annealing makes the specimens conducting *** phenomenon maybe has potential for application in designing DF device.

关键词： diamond implantation conducting

Fine Structural and Carbon Source Analysis for diamond Crystal Growth using an Fe-Ni-C System at High Pressure and High Temperature

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Chinese Physics Letters 2012年第4期29卷 229-231页

作者： FAN Xiao-Hong XU Bin NIU Zhen ZHAI Tong-Guang TIAN Bin School of Material Science and Engineering Shandong UniversityJi’nan 250101 School of Materials Science and Engineering Shandong Jianzhu UniversityJi’nan 250101 Department of Chemical and Materials Engineering University of KentuckyLexingtonUSA

diamond is synthesized in an Fe-Ni-C system at high pressure and high temperature,the C sp^(3) content profile through different thicknesses of interface between diamond and the catalyst film is measured by using electron energy loss *** is found that the Csp^(3) content varies from 87.33% to 78.15% when the measured position is located at the inner face near the diamond and then changes to 6 μm further *** electron microscope examinations show that there are different phases in the interface,such as Fe3C,γ-(Fe,Ni),and graphite,but the graphite phase diminishes gradually towards the inner face of the *** results profoundly indicate that the carbon atoms,required for diamond growth,could only come from the carbon-rich phase,Fe3C,but not directly from the *** is possible that carbon atoms from the graphite in the interface first react with Fe atoms to produce carbide Fe3 C during diamond synthesis at high pressure and high *** Fe3 C finally decomposes into carbon atoms with the sp^(3) electron state at the interface to form the diamond.

关键词： spectroscopy carbide diamond

Effects of submicron diamonds on the growth of copper in Cu-diamond co-deposition

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International Journal of Minerals,Metallurgy and Materials 2012年第1期19卷 72-76页

作者： You-yang Wei Wei-ping Li Hui-cong Liu Yong-zheng Liu Li-qun Zhu The key Laboratory of the Ministry of Education of China for Aerospace Materials and Performance Beijing 100191 China School of Materials Science and Engineering Beihang University Beijing 100191 China Beijing Institute of Aeronautical Materials Science and Technology on Advanced Composites Laboratory Beijing 100095 China

Submicron diamonds were co-deposited on aluminum substrates with copper from the acid copper sulfate electrolyte by electro- lyte-suspension co-deposition. After submicron diamonds were added to the electrolyte, the shape of copper grains transformed from oval or round to polyhedron, the growth mode of copper grains transformed from columnar growth to gradual change in size, and the preferred ori- entation of copper grains transformed from （220） to （200）. Analyzing the variation of cathodic overpotential, it was found that the cathodic overpotential tended to remain tmchanged when copper plane （220） grew in the process of electrodepositing pure copper, while it tended to decrease with time when copper plane （200） grew in the process of co-deposition. It was inferred that copper plane （200） was propitious to the deposition of submicron diamonds.

关键词： composite coatings copper diamond co-deposition gradient materials grain growth

Highly Oriented diamond Film Growth by Atomic Force Microscopy

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Chinese Physics Letters 1998年第11期15卷 822-824页

作者： LI Jian-long MENG Ge WU Ke-hui WANG En-ge State Key Laboratory for Surface Physics Institute of PhysicsChinese Academy of SciencesBeijing 100080

diamond thin films are grown with microwave plasma chemical vapor deposition method on silicon(100)substrates from methane/hydrogen gas mixture,and characterized with atomic force microscopy The results show that most of the diamond crystallites are highly oriented with the(100)planes parallel to the silicon *** structures are found in the film,indicating a combination of layer-by-layer and island *** spectrum and x-ray diffraction also confirm the present results.

关键词： diamond layer island

Magnetic field analysis in a diamond anvil cell for Meissner effect measurement by using the diamond NV^- center

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Chinese Physics B 2019年第3期28卷 149-152页

作者： Lin Zhao Donghui Yue Cailong Liu Min Wang Yonghao Han Chunxiao Gao State Key Laboratory of Superhard Materials Jilin UniversityChangchun 130012China

diamond negatively charged nitrogen-vacancy(NV-) centers provide an opportunity for the measurement of the Meissner effect on extremely small samples in a diamond anvil cell(DAC) due to their high sensitivity in detecting the tiny change of magnetic field. We report on the variation of magnetic field distribution in a DAC as a sample transforms from normal to superconducting state by using finite element analysis. The results show that the magnetic flux density has the largest change on the sidewall of the sample, where NV-centers can detect the strongest signal variation of the magnetic field. In addition, we study the effect of magnetic coil placement on the magnetic field variation. It is found that the optimal position for the coil to generate the greatest change in magnetic field strength is at the place as close to the sample as possible.

关键词： negatively charged nitrogen-vacancy(NV-) centers diamond anvil cell superconductivity magnetic field detection

Room-temperature plasticity in diamond

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Science China(Technological Sciences) 2021年第1期64卷 32-36页

作者： BU YeQiang WANG Peng NIE AnMin WANG HongTao Center for X-mechanics Zhejiang UniversityHangzhou 310027China Institute of Applied Mechanics Zhejiang UniversityHangzhou 310027China Materials Genome Institute Shanghai UniversityShanghai 200444China Center for High Pressure Science State Key Laboratory of Metastable Materials Science and TechnologyYanshan UniversityQinhuangdao 066004China

In spite of extremely high strength and hardness, the property of brittleness is tightly linked to diamond. In the deformation of diamond at room temperature, the plasticity of the diamond is normally considered hard to occur because of the domination of catastrophic brittle fracture. Herein, we employed in-situ transmission electron microscopy to reveal the diamond roomtemperature plastic behavior, and compared it with a recent report(Adv. Mater. 2020, 1906458) on transformation-induced room-temperature plasticity of diamond nanopillars. Our present in-situ uniaxial compression tests in sub-micron-sized diamond pillars indicate that the plasticity in diamond is carried out by dislocations slipping instead of phase transformation and the initiation of plasticity highly depends on the stress state. On the other hand, we noted that a high proportion of amorphous surface layer in the diamond pillars with a diameter of less than 20 nm may be a significant factor leading to the plasticity.

关键词： diamond plasticity dislocation in-situ transmission electron microscopy

Tensile-strain induced phonon splitting in diamond

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Chinese Physics B 2019年第5期28卷 71-74页

作者： Meifang Pu Feng Zhang Shan Liu Tetsuo Irifune Li Lei Institute of Atomic and Molecular Physics Sichuan University Geodynamics Research Center Ehime University

The first-order Raman spectroscopy of diamond exhibits splitting and redshift after the burst of high-pressure(160–200 GPa) and high-temperature(～2000 K). The observed longitudinal optical(LO) and the transverse optical(TO) splitting of Raman phonon is related to the tensile-strain induced activation of the forbidden or silent Raman modes that arise in the proximity of the Brillouin zone center.

关键词： diamond tensile-strain phonon splitting Brillouin zone