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Photoelectric properties of ITO thin films deposited by dc magnetron sputtering

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Journal of Semiconductors 2011年第1期32卷 17-20页

作者：柳伟程树英 College of Physics and Information Engineering Institute of Micro-Nano Devices & Solar Cells Fuzhou University

As anti-reflecting thin films and transparent electrodes of solar cells, indium tin oxide （ITO） thin films were prepared on glass substrates by dc magnetron sputtering process. The main sputtering conditions were sputtering power, substrate temperature and work pressure. The influence of the above sputtering conditions on the transmittance and conductivity of the deposited ITO films was investigated. The experimental results show that, the transmittance and the resistivity decrease as the sputtering power increases from 30 to 90 W. When the substrate temperature increases from 25 to 150℃, the transmittance increases slightly whereas the resistivity decreases. As the work pressure increases from 0.4 to 2.0 Pa, the transmittance decreases and the resistivity increases. When the sputtering power, substrate temperature and work pressure are 30 W, 150℃, 0.4 Pa respectively, the ITO thin films exhibit good electrical and optical properties, with resistivity below 10^-4 Ωcm and the transmittance in the visible wave band beyond 80%. Therefore, the ITO thin films are suitable as transparent electrodes of solar cells.

关键词： ITO thin films dc magnetron sputtering optical properties electrical properties

Indium–tin oxide films obtained by dc magnetron sputtering for improved Si heterojunction solar cell applications

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Chinese Physics B 2015年第11期24卷 502-505页

作者：谷锦华司嘉乐王九秀冯亚阳郜小勇卢景霄 Key Laboratory of Materials Physics of Ministry of Education School of Physical Engineering Zhengzhou University

The indium-tin oxide （ITO） film as the antireflection layer and front electrodes is of key importance to obtaining high efficiency Si heterojunction （HJ） solar cells. To obtain high transmittance and low resistivity ITO films by direct-current （dc） magnetron sputtering, we studied the impacts of the ITO film deposition conditions, such as the oxygen flow rate, pressure, and sputter power, on the electrical and optical properties of the ITO films. ITO films of resistivity of 4 x 10-4 ~.m and average transmittance of 89% in the wavelength range of 380-780 nm were obtained under the optimized conditions： oxygen flow rate of 0.1 sccm, pressure of 0.8 Pa, and sputtering power of 110 W. These ITO films were used to fabricate the single-side HJ solar cell without an intrinsic a-Si：H layer. However, the best HJ solar cell was fabricated with a lower sputtering power of 95 W, which had an efficiency of 11.47%, an open circuit voltage （Voc） of 0.626 V, a filling factor （FF） of 0.50, and a short circuit current density （Jsc） of 36.4 mA/cm2. The decrease in the performance of the solar cell fabricated with high sputtering power of 110 W is attributed to the ion bombardment to the emitter. The Voc was improved to 0.673 V when a 5 nm thick intrinsic a-Si：H layer was inserted between the （p） a-Si：H and （n） c-Si layer. The higher Voc of 0.673 V for the single-side HJ solar cell implies the excellent c-Si surface passivation by a-Si：H.

关键词： ITO films Si heterojunction solar cell dc magnetron sputtering

Fabrication and its characteristics of hard coating Ti-Al-N system prepared by dc magnetron sputtering

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Rare Metals 2012年第2期31卷 178-182页

作者： Zhou, Xuyang Wu, Aimin Qu, Wenchao Jiang, Xin School of Materials Science and Engineering Dalian University of Technology Dalian 116024 China Key Laboratory of Materials Modification by Laser Ion and Electron Beams Ministry of Education Dalian University of Technology Dalian 116024 China Institute of Materials Engineering University of Siegen Paul-Bonatz-Straβe 9-11. D-57076 Siegen Germany

Pseudobinary Ti 1 x Al x N films were synthesized on Si (100) wafer by dc magnetron sputtering method using Ti 1 x Al x alloy targets with different Al contents. The composition of the Ti 1 x Al x N films was determined by electron probe microanalysis (EPMA). Structural characteristic was performed by X-ray diffraction (XRD), transmission electron microscopy (TEM), and high-resolution TEM (HRTEM). First principles virtual crystal calculations for the Ti 1 x Al x N disordered alloys were used for the XRD simulations. The crystalline structure of the Ti 0.61 Al 0.39 N film was found to be a metastable single phase with NaCl (B1) structure. Its lattice constant, determined by XRD, was less than that of pure TiN. With the increase of Al content, the lattice constant of B1 phase was continually decreased, while würtzite (B4) structure was observed in the Ti 0.40 Al 0.60 N film. When x reached 0.75, the B1 phase disappeared, and only B4 phase was remained. The critical Al content for the phase transition from NaCl to würtzite structure in this paper was about 0.60, which could be explained by both the thermodynamic model and the electron theory. As-deposited Ti 1 x Al x N films exhibited excellent mechanical properties. Hardness measurements of Ti 1 x Al x N films showed a high value of 45GPa for x=0.39 and was decreased to value of 27 GPa with increasing Al at x=0.60.

关键词： Ti-Al-N dc magnetron sputtering phase transition hardness

Deposition and characterization of TiZrV-Pd thin films by dc magnetron sputtering

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Chinese Physics C 2015年第12期39卷 95-99页

作者：王洁张波徐延辉尉伟范乐裴香涛洪远志王勇 National Synchrotron Radiation Laboratory University of Science and Technology of China

TiZrV film is mainly applied in the ultra-high vacuum pipes of storage rings. Thin fihn coatings of palladium, which are added onto the TiZrV film to increase the service life of nonevaporable getters and enhance H2 pumping speed, were deposited on the inner face of stainless steel pipes by dc magnetron sputtering using argon gas as the sputtering gas. The TiZrV-Pd film properties were investigated by atomic force microscope （AFM）, scanning electron microscope （SEM）, X-ray photoelectron spectroscopy （XPS） and X-Ray Diffraction （XRD）. The grain size of TiZrV and Pd films were about 0.42 1.3 nm and 8.5-18.25 nm respectively. It was found that the roughness of TiZrV films is small, about 2 4 nm, but for Pd film it is large, about 17 19 nm. The PP At. % of Pd in TiZrV/Pd films varied from 86.84 to 87.56 according to the XPS test results.

关键词： TiZrV-Pd nonevaporable getters film coating dc magnetron sputtering

Photocatalytic Property of TiO2 Films Deposited by Pulsed dc magnetron sputtering

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Journal of Materials Science & Technology 2004年第1期20卷 31-34页

作者： Wenjie ZHANG, Shenglong ZHU, Ying LI and Fuhui WANGState Key Laboratory for Corrosion and Protection, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China Chinese Acad Sci Inst Met Res State Key Lab Corros & Protect Shenyang 110016 Peoples R China

TiO2 thin films were prepared by dc magnetron sputtering with the oxygen flow rate higher than the threshold. The film deposited for 5 h was of anatase phase with a preferred orientation along the direction, but the films deposited for 2 and 3 h were amorphous. The transmittance and photocatalytic activity of the TiO2 films increased constantly with increasing film thickness. When the annealing temperature was lower than 700℃, only anatase grew in the TiO2 film. TiO2 phase changed from anatase to rutile when the annealing temperature was above 800℃. The photocatalytic activity decreased with increasing annealing temperature.

关键词： TiO2 film Photocatalytic activity dc magnetron sputtering Film characteristic

Effect of N_2-Gas Partial Pressure on the Structure and Properties of Copper Nitride Films by dc Reactive magnetron sputtering

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Plasma Science and Technology 2007年第2期9卷 147-151页

作者：刘祖黎李兴鳌左安友袁作彬杨建平姚凯伦 Department of Physics Huazhong University of Science and TechnologyWuhan 430074China Department of Physics Huazhong University of Science and TechnologyWuhan 430074China Department of PhysicsHubei Institute for NationalitiesEnshi 445000China Department of Physics Hubei Institute for NationalitiesEnshi 445000China

Copper nitride thin films were deposited on glass substrates by reactive direct current （dc） magnetron sputtering at various N2-gas partial pressures and room temperature. Xray diffraction measurements showed that the films were composed of Cu3N crystallites and exhibited a preferential orientation of the [111] direction at a low nitrogen gas （N2） partial pressure. The film growth preferred the [111] and the [100] direction at a high N2 partial pressure. Such preferential film growth is interpreted as being due to the variation in the Copper （Cu） nitrification rate with the N2 pressure. The N2 partial pressure affects not only the crystal structure of the film but also the deposition rate and the resistivity of the Cu3N film. In our experiment, the deposition rate of Cu3N films was 18 nm/min to 30 nm/min and increased with the N2 partial pressure. The resistivity of the Cu3N films increased sharply with the increasing N2 partial pressure. At a low N2 partial pressure, the Cu3N films showed a metallic conduction mechanism through the Cu path, and at a high N2 partial pressure, the conductivity of the Cu3N films showed a semiconductor conduction mechanism.

关键词： Cu3N film dc magnetron sputtering N2-gas partial pressure resistivity

Oxygen Content on the Influence of the Electrical and Optical Properties of ITO Thin Films Made by dc magnetron sputtering

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Oxygen Content on the Influence of the Electrical and Optica...

Mechanical,Microstructural and Tribological Properties of Reactive magnetron Sputtered Cr-Mo-N Films

2007亚洲显示国际会议

作者： Jingting Wei Yuchun Feng Zhang Wei Xinping He Junwei Lin Institute of Optoeletronics Shenzhen University Shenzhen 518060 China

＜正＞Using In/Sn alloy as target,samples were got with different oxygen content by changing the oxygen flux when making the ITO thin films,then annealed at different temperature of 400℃ and 600℃ under air *** square resistances of the samples before and after annealing were gained by using the four-point probe *** the scanning electron microscope to analyze the surface ingredients of the samples and the Perkinelmer Instruments LAMBDA 900 pho- tometer to measure the transmittance of the samples,this paper got a conclusion:changing the oxygen flux during the preparation of ITO thin films to infect the oxygen content of samples can result in that the square resistance and transmit- tance of different samples with the increasing of the annealing temperature varied in a different law.

关键词： ITO Thin Film dc magnetron sputtering Anneal Square Resistance Transmittance

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Journal of Materials Science & Technology 2015年第1期31卷 55-64页

作者： Dongli Qi Hao Lei Tiegang Wang Zhiliang Pei Jun Gong Chao Sun Surface Engineering of Materials Division Institute of Metal ResearchChinese Academy of Sciences

The Cr-Mo-N films were deposited on high speed steel（HSS） substrates by a dc reactive magnetron sputtering equipment coupled with two horizontal magnetron *** effects of substrate negative bias voltage（Vb）,substrate temperature（Ts） and gas flow ratio（R= N2/（N2+ Ar）） on the microstructure,morphology,as well as the mechanical and tribological properties of the Cr-Mo-N films were investigated by virtue of X-ray diffraction（XRD） analysis,X-ray photoelectron spectroscopy（XPS）,field emission scanning electron microscopy（FESEM）,atomic force microscopy（AFM）,nano-indentation test,ball-on-disk tribometer,and Rockwell indenter et *** increasing Vbto-100 V,the preferred orientation of the films changed from（111） to（200） and their mechanical and tribological properties were improved gradually,*** was also found that Tsgave a significant effect on mechanical property *** the Tsreached 300 ℃,the film obtained the highest hardness and effective elastic modulus of approximately 30.1 and 420.5 GPa,respectively and its critical load increased to about 54 *** increasing R,the phase transformation from body-centered-cubic（bcc） Cr and hexagonal CrMoNxmultiphase to single face-centered-cubic（fcc） solid solution phase was *** correlations between values of hardness（H）,effective elastic modulus（E*）,HIE*,H3/E*2,elastic recovery（1/14） and tribological properties of the films were also *** results showed that the elastic recovery played an important role in the tribological behavior.

关键词： Cr-Mo-N films dc magnetron sputtering Hardness Cri

Nano-multilayered ZrN‒Ag/Mo‒S‒N film design for stable anti-frictional performance at a wide range of temperatures

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Friction 2024年第12期12卷 2826-2837页

作者： Hongbo JU Jing LUAN Junhua XU Albano CAVALEIRO Manuel EVARISTO Filipe FERNANDES School of Materials Science and Engineering Jiangsu University of Science and TechnologyZhenjiang 212003China Department of Mechanical Engineering CEMMPREARISEUniversity of CoimbraRua Luís Reis SantosCoimbra 3030-788Portugal TINT-Laboratory for Tribology and Interface Nanotechnology Faculty of Mechanical EngineeringUniversity of LjubljanaAškerčeva 6Ljubljana 1000Slovenia CIDEM ISEP-Polytechnic of PortoRua Dr.António Bernardino de AlmeidaPorto 4249-015Portugal

A multilayer film,composed by ZrN‒Ag(20 nm)and Mo‒S‒N(10 nm)layers,combining the intrinsic lubricant characteristics of each layer was deposited using dc magnetron sputtering system,to promote lubrication in a wide-range of *** results showed that the ZrN‒Ag/Mo‒S‒N multilayer film exhibited a sharp interface between the different layers.A face-centered cubic(fcc)dual-phases of ZrN and Ag co-existed in the ZrN‒Ag layers,whilst the Mo‒S‒N layers displayed a mixture of hexagonal close-packed MoS_(2)(hcp-MoS_(2))nano-particles and an amorphous *** multilayer film exhibited excellent room temperature(RT)triblogical behavior,as compared to the individual monolayer film,due to the combination of a relative high hardness with the low friction properties of both *** reorientation of MoS_(2)parallel to the sliding direction also contributed to the enhanced anti-frictional performance at *** 400℃,the reorientation of MoS_(2)as well as the formation of MoO_(3)phase were responsible for the lubrication,whilst the hard t-ZrO_(2)phase promoted abrasion and,consequently,led to increasing wear *** 600℃,the Ag_(2)MoO_(4)double-metal oxide was the responsible for the low friction and wear-resistance;furthermore,the observed transformation from t-ZrO_(2)to m-ZrO_(2),could also have contributed to the better tribological performance.

关键词： dc magnetron sputtering ZrN‒Ag/Mo‒S‒N multilayer film tribological properties tribo-phases