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growth and characterization of ferroelectric Tb_2(MoO_4)_3 crystal

Journal of Rare Earths 2009年第2期27卷 192-195页

作者：徐民于永贵张怀金王继扬 State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China

By using Tb407 and MoO3 as starting materials, ferroelectric Tb2（MoO4）3 crystal was grown by the czochralski method. The as-grown crystal was pale green color, transparent and crack-free. X-ray powder diffraction （XRPD）, transmission spectrum, dielectric constant and polarization-electric field （P-E） hysteresis loop measurements were performed to characterize the crystal. The XRPD confirmed the as-grown crystal to be Tb2（MoO4）3. The transmission spectrum of the crystal showed that its transmittance in the entire visible and most near-infrared region was more than 70% except for an absorption peak around 486 nm. Obvious dielectric anomaly could be observed at low frequencies with increasing temperature through the dielectric constant measurement and the Curie temperature of Tb2（MoO4）3 crystal was determined to be 162.3℃ The unsaturated P-E hysteresis loops indicated that it was difficult for the ferroelectric domains in Tb2（MoO4）3 crystal to array regularly with repeated switching of the electric field.

关键词： Tb2(MoO4)3 single crystal czochralski growth characterization rare earths

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Progress in modeling of fluid flows in crystal growth processes

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Progress in Natural Science:Materials International 2008年第12期18卷 1465-1473页

作者： Qisheng Chen Yanni Jiang Junyi Yan Ming Qin Institute of Mechanics.Chinese Academy of Sciences,Beijing 100190,China Institute of Mechanics Chinese Academy of Sciences Beijing 100190 China

Modeling of fluid flows in crystal growth processes has become an important research area in theoretical and applied *** crystal growth processes involve fluid flows,such as flows in the melt,solution or *** modeling has played an important role in developing technologies used for growing semiconductor crystals for high performance electronic and optoelectronic *** application of devices requires large diameter crystals with a high degree of crystallographic perfection,low defect density and uniform dopant *** this article,the flow models developed in modeling of the crystal growth processes such as czochralski,ammono- thermal and physical vapor transport methods are *** the czochralski growth modeling,the flow models for thermocapillary flow,turbulent flow and MHD flow have been *** the ammonothermal growth modeling,the buoyancy and porous media flow models have been developed based on a single-domain and continuum approach for the composite fluid-porous layer *** the physical vapor transport growth modeling,the Stefan flow model has been proposed based on the flow-kinetics theory for the vapor *** addition,perspectives for future studies on crystal growth modeling are proposed.

关键词： Modeling Crystal growth Fluid flow czochralski growth Ammonothermal growth Physical vapor transport

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