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Design and implementation of adaptive slope compensation in current mode DC-DC converter

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Journal of Semiconductors 2010年第12期31卷 109-115页

作者：郭仲杰吴龙胜刘佑宝 Xi'an Microelectronic Technology Institute

To improve the compensation for the inherent instability in a current mode converter, the adaptive slope compensation, giving attention to the problems of the traditional compensation on compensation accuracy, loading capability and turning jitter, is presented. Based on the analysis of current loop, by detecting the input and output voltage, converting the adaptive slope compensation current, the compensation of the current loop is optimized successfully. It can not only improve the compensation accuracy but also eliminate the over compensation, the turning jitter and the poor loading capability in the reported slope compensation. A power supply chip with adaptive slope compensation has been fabricated in a 0.35 μm CMOS process. The measurement results show that the chip starts up and operates steadily with the constant current limit under conditions of 5 V input voltage, from 10% to 100% duty cycle.

关键词： current mode slope compensation current limit loading capability

A current mode feed-forward gain control system for a 0.8 V CMOS hearing aid

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Journal of Semiconductors 2011年第6期32卷 126-131页

作者：李凡阳杨海钢刘飞尹幍 Institute of Electronics Chinese Academy of Sciences Graduate University of the Chinese Academy of Sciences

A current mode feed-forward gain control（CMFGC）technique is presented,which is applied in the front-end system of a hearing aid *** with conventional automatic gain control（AGC）,CMFGC significantly improves the total harmonic distortion（THD）by digital gain *** attain the digital gain control codes according to the extremely weak output signal from the microphone,a rectifier and a state controller implemented in current mode are proposed.A prototype chip has been designed based on a 0.13μm standard CMOS *** measurement results show that the supply voltage can be as low as 0.6 *** with the 0.8 V supply voltage,the THD is improved and below 0.06%（-64 dB）at the output level of 500 mV_（p-p）,yet the power consumption is limited to 40μ*** addition,the input referred noise is only 4μV_（rms）and the maximum gain is maintained at 33 dB.

关键词： current mode gain control hearing aid

Five New MVL current mode Differential Absolute Value Circuits Based on Carbon Nano-tube Field Effect Transistors(CNTFETs)

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Nano-Micro Letters 2010年第4期2卷 227-234页

作者： Mojtaba Jamalizadeh Fazel Sharifi Mohammad Hossein Moaiyeri Keivan Navi Omid Hashemipour Department of Computer Engineering Science and Research Branch of Islamic Azad University Faculty of Electrical and Computer Engineering Shahid Beheshti University

Carbon Nano-Tube Field Effect Transistors(CNTFETs) are being widely studied as possible successors to silicon *** current mode has many advantages such as performing sum operation by means of a simple wired ***,direction of the current can be used to exhibit the sign of *** is expected that the advantages of current mode approaches will become even more important with increased speed requirements and decreased supply *** this paper,we present five new circuit designs for differential absolute value in current mode logic which have been simulated by CNTFET *** considered base current for this model is 2 μA and supply voltage is 0.9 *** all of our designs we used N-type CNTFET current mirrors which operate as truncated difference *** operation of Differential Absolute Value circuit calculates the difference between two input currents and our circuit designs are operate in 8 logic levels.

关键词： CNTFET current mode Truncated difference Differential absolute value

A high linearity current mode multiplier/divider with a wide dynamic range

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Journal of Semiconductors 2012年第12期33卷 62-65页

作者：廖鹏飞罗萍张波李肇基 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A high linearity current mode multiplier/divider （CMM/D） with a wide dynamic range is presented. The proposed CMM/D is based on the voltage-current characteristic of the diode, thus wide dynamic range is achieved. In addition, high linearity is achieved because high accuracy current mirrors are adopted and the output current is insensitive to the temperature and device parameters of the fabrication process. Furthermore, no extra bias current for all input signals is required and thus power saving is realized. With proper selection of establishing the input terminal, the proposed circuit can perform as a mulfifunction circuit to he operated as a multiplier/divider, without changing its topology. The proposed circuit is implemented in a 0.25μm BCD process and the chip area is 0.26 ~ 0.24 mm2. The simulation and measurement results show that the maximum static linearity error is 4-1.8% and the total harmonic distortion is 0.4% while the input current ranges from 0 to 200 μA.

关键词： high linearity current mode multiplier/divider static linearity THD

A high linearity current mode second IF CMOS mixer for a DRM/DAB receiver

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Journal of Semiconductors 2015年第5期36卷 99-103页

作者：徐建周正吴毅强王志功陈建平 Institute of RF- & OE-ICs Southeast University Nanjing Ticom Tech Co.Ltd

A passive current switch mixer was designed for the second IF down-conversion in a DRM/DAB re- ceiver. The circuit consists of an input transconductance stage, a passive current switching stage, and a current amplifier stage. The input transconductance stage employs a self-biasing current reusing technique, with a resistor shunt feedback to increase the gain and output impedance. A dynamic bias technique is used in the switching stage to ensure the stability of the overdrive voltage versus the PVT variations. A current shunt feedback is introduced to the conventional low-voltage second-generation fully balanced multi-output current converter （FBMOCCII）, which provides very low input impedance and high output impedance. With the circuit working in current mode, the linearity is effectively improved with low supply voltages. Especially, the transimpedance stage can be re- moved, which simplifies the design considerably. The design is verified with a SMIC 0.18μm RF CMOS process. The measurement results show that the voltage conversation gain is 1.407 dB, the NF is 16.22 dB, and the IIP3 is 4.5 dBm, respectively. The current consumption is 9.30 mA with a supply voltage of 1.8 W. This exhibits a good compromise among the gain, noise, and linearity for the second IF mixer in DRM/DAB receivers.

关键词： CMOSRF current mode passive current switching mixer FBMOCCII DRM DAB

A 0.9 V PSRR improved voltage reference using a wide-band cascaded current mode differentiator

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Journal of Semiconductors 2018年第10期39卷 75-81页

作者： Fanyang Li Fuzhou University Fuzhou 310002China

We present a voltage reference using a wide-band cascaded current mode differentiator, for the improved PSRR performance. Compared with the conventional references, the reference with the technique is mainly characterized by a two cascaded stages current mode signal differentiator. In the differentiator, a zero OTA G_m is proposed, to achieve the wide-band differential characteristic. With the technique, the PSRR beyond the pole＇s corresponding frequency can be significantly improved with the minimum supply voltage only about V_（GS_PMOS）＋（V_（GS_NMOS-VTH））. Fabricated with a 0.18 μm CMOS process, with the 0.9 V supply voltage, the PSRR @ 20 MHz of the reference is achieved at-54 dB. Moreover, the power dissipation is 19 μW.

关键词： reference current mode differentiator

A differential low-voltage high gain current-mode integrated RF receiver front-end

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Journal of Semiconductors 2011年第2期32卷 120-125页

作者：王春华马铭磷孙晶茹杜四春郭小蓉何海珍 School of Information Science and Technology Hunan University

A differential low-voltage high gain current-mode integrated RF front end for an 802.1 lb WLAN is proposed. It contains a differential transeonductance low noise amplifier （Gm-LNA） and a differential current- mode down converted mixer. The single terminal of the Gm-LNA contains just one MOS transistor, two capacitors and two inductors. The gate source shunt capacitors, Cx1 and Cx2, can not only reduce the effects of gate-source Cgs on resonance frequency and input-matching impedance, but they also enable the gate inductance Lgl,2 to be selected at a very small value. The current-mode mixer is composed of four switched current mirrors. Adjusting the ratio of the drain channel sizes of the switched current mirrors can increase the gain of the mixer and accordingly increase the gain of RF receiver front-end. The RF front-end operates under 1 V supply voltage. The receiver RFIC was fabricated using a chartered 0. 18 μm CMOS process. The integrated RF receiver front-end has a measured power conversion gain of 17.48 dB and an input referred third-order intercept point （IIP3） of-7.02 dBm. The total noise figure is 4.5 dB and the power is only 14 mW by post-simulations.

关键词： low voltage current mode RF front end transconductance LNA switched current mirror

New Single Input Multiple Output Type current mode Biquad Filter Using OTAs

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Circuits and Systems 2016年第4期7卷 231-238页

作者： Manish Gupta Department of Electronics and Communication Engineering Greater Noida Institute of TechnologyGreater Noida India

This paper presents a new current mode (CM) single-input and multi-output (SIMO)-type biquad using two multiple output OTAs and one current follower as an active device and having two grounded capacitors. This SIMO type circuit realizes all the five filter functions as low pass, band pass, high pass, band reject and all pass filter transfer functions simultaneously. This circuit has the unity gain transfer function for all the five types of filters. The circuit enjoys electronic tunability of angular frequency and bandwidth. The 0.18 μm TSMC technology process parameters have been utilized to test and verify the performance characteristics of the circuit using PSPICE. The sensitivity analysis, transient response and calculations of total harmonic distortion have also been shown.

关键词： Active Filters current mode Operational Transconductance Amplifier Universal Filter

10Gb/s GaAs PHEMT current mode Transimpedance Preamplifier for Optical Receiver

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Journal of Semiconductors 2007年第1期28卷 24-30页

作者：焦世龙叶玉堂陈堂胜冯欧蒋幼泉范超李拂晓电子科技大学光电信息学院成都610054 单片集成电路与模块国家级重点实验室南京210016 南京电子器件研究所南京210016

A single power supply common-gate （CG） current mode transimpedance preamplifier （TIA） is developed with a 0.5μm GaAs PHEMT process. The amplifier has a measured - 3dB bandwidth of 7. 5GHz and a transimpedance gain of 45dBΩ. Both the input and output voltage standing wave ratios （VSWR） are less than 2 within the bandwidth. The equivalent input noise current spectral density varies from 14.3 to 22pA/√Hz, with an average value of 17. 2pA/√Hz. Having a timing jitter of 14ps and eye amplitude of about 138mV,the measured output eye diagram for 10Gb/s NRZ pseudorandom binary sequence （PRBS） is clear and satisfactory.

关键词： GaAs PHEMT current mode preamplifier noise figure eye diagram