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The effects of Zn vacancies on ferromagnetism in cu-doped zno films controlled by oxygen pressure and Li doping

Chinese Physics B 2013年第6期22卷 553-556页

作者：冉从军杨海龄王延恺 Hassan Farooq M 周丽宫徐晓光姜勇 School of Materials Science and Engineering University of Science and Technology Beijing

Zn0.99cu0.01O films were studied experimentally and theoretically. The films were prepared by pulsed-laser deposition on Pt（111）/Ti/SiO2/Si substrates under various oxygen pressures to investigate the growth-dependence of the ferromagnetic properties. The structural, magnetic, and optical properties were studied, and it was found that all the samples possess a typical wurtzite structure, and that the films exhibit room-temperature ferromagnetism. The sample deposited at 600 ℃ and an oxygen pressure of 10 Pa showed a large saturation magnetization of 0.83 μB/cu. The enhanced ferromagnetism in the （cu, Li）-codoped zno is attributable to the existence of Zn vacancies （Vzn）, as shown by first-principles calcu- lations. The photoluminescence analysis demonstrated the existence of Vzn in both Zn0.99cu0.01 O and （cu, Li）-codoped zno thin films, and this plays an important role in the increase of ferromagnetism, according to the results of first-principles calculations.

关键词： dilute magnetic semiconductor cu-doped zno pulsed laser deposition first-principles

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Structural, optical and electron paramagnetic resonance studies on cu-doped zno nanoparticles synthesized using a novel auto-combustion method

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Frontiers of Materials Science 2013年第2期7卷 196-201页

作者： R. ELILARASSI G. CHANDRASEKARAN Magnetism and Nanomagnetic Materials Lab Department of Physics School of Physical Chemical and Applied Sciences Pondicherry University Puducherry 605014 India

Nanocrystalline Zn1_xcuxO （x = 0, 0.02, 0.04, 0.06, 0.08） samples were synthesized by a novel auto-combustion method using glycine as the fuel material. The structural, optical and magnetic properties of the samples were characterized using XRD, SEM, photoluminescence （PL） and electron paramagnetic resonance （EPR） spectro- scopies. The XRD spectra of samples reveal the hexagonal wurtzite structures of zno. As the copper content increases, a diffraction peak at 28 = 39° corresponding to secondary phase of cuO （[111] crystalline face） appears when x≤ 6 mol.%. PL spectra of the samples show a strong ultraviolet （UV） emission and defect related visible emissions. cu-doping in zno can effectively adjust the energy level in zno, which leads to red shift in the emission peak position in UV region. The EPR spectra of cu-doped zno nanoparticles show a distinct and broad signal at room temperature, suggesting that it may be attributed to the exchange interactions within cu2＋ ions.

关键词： cu-doped zno auto-combustion luminescence electron paramagneticresonance （EPR）

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First-principles study of electronic and optical properties in wurtzite Zn_(1-x)cu_xO

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Chinese Physics B 2010年第5期19卷 427-433页

作者：赵龙芦鹏飞俞重远刘玉敏王东林叶寒 Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications) Ministry of Education

We perform a first-principles simulation to study the electronic and optical properties of wurtzite Zn1-xcuxO. The simulations are based upon the Perdew-Burke-Ernzerhof form of generalised gradient approximation within the density functional theory. Calculations are carried out in different concentrations. With increasing cu concentration, the band gap of Znl-xcuxO decreases due to the shift of valence band. The imaginary part of the dielectric function indicates that the optical transition between O2p states in the highest valence band and Zn 4s states in the lowest conduction band shifts to the low energy range as the cu concentration increases. Besides, it is shown that the insertion of cu atom leads to redshift of the optical absorption edge. Meanwhile, the optical constants of pure zno and Zn0.75cu0.250, such as loss function, refractive index and reflectivity, are discussed.

关键词： density functional theory cu-doped zno electronic structure optical properties

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Analysis of structural,optical and electrical properties of metal/p-zno-based Schottky diode

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Journal of Semiconductors 2017年第10期38卷 56-62页

作者： Lucky Agarwal Shweta Tripathi P.Chakrabarti Department of Electronics & Communication Engineering Motilal Nehru National Institute of Technology Department of Electronics Engineering Indian Institute of Technology(Banaras Hindu University)

A systematic study of the behaviour of Pd/p-zno thin film Schottky diode has been reported.The p-type zno thin film with improved stability has been grown on n-type Si by doping zno with copper.Seebeck measurement confirmed the p-type nature of cu-doped zno thin film.The X-ray diffraction spectra of the deposited film revealed polycrystalline nature with preferred growth orientation of （101） of zno film.The surface morphological study demonstrated the conformal deposition of a thin film over n-Si wafer.The estimated bandgap of cu-doped ptype zno thin film from ellipsometric measurement turns out to be 3.14 eV at 300 K.The measured electrical parameters of the proposed Pd/p-zno Schottky diode have also been validated by the results of numerical simulation obtained by using ATLAS^（TM） device simulator.

关键词： p-type zno cu-doped zno sol-gel method Schottky diode

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