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PCR-DGGE Analysis of Nematode Diversity in Cu-Contaminated Soil

Pedosphere 2008年第5期18卷 621-627页

作者： WANG Shi-Bin LI Qi LIANG Wen-Ju JIANG Yong JIANG Si-Wei Key Laboratory of Terrestrial Ecological Process Institute of Applied Ecology Chinese Academy of Sciences Shenyang110016 （China）.

A wheat pot experiment was conducted under greenhouse conditions to assess the effect of copper contamination on soil nematode diversity by polymerase chain reaction-denaturing gradient gel electrophoresis （PCR-DGGE） method and morphological analysis. The soil was treated with CuSO4.5H2O at the following concentrations： 0, 50, 100, 200, 400, and 800 mg kg^-1 dry soil, and the soil samples were collected at wheat jointing and ripening stages. Nematode diversity index （H′） from morphological analysis showed no difference between the control and the treated samples in either of the sampling dates. At the wheat ripening stage, nematode diversity obtained by the PCR-DGGE method decreased noticeably in the Cu800 treatment in comparison with the control. With optimization of the method of nematode DNA extraction, PCR-DGGE could give more information on nematode genera, and the intensity of the bands could reflect the abundance of nematode genera in the assemblage. The PCR-DGGE method proved promising in distinguishing nematode diversity in heavy metal coritaminated soil.

关键词： copper contamination morphological analysis nematode diversity PCR-DGGE

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Effects of Cu contamination on the electrical properties of multicrystalline silicon purified by directional solidification route

Effects of Cu contamination on the electrical properties of ...

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2014中国功能材料科技与产业高层论坛

作者： Li Jiao Chen Xiu-hua Ma Wen-hui Zhang Cong Wei Kui-xian Faculty of Physical Science and Technology Yunnan University The National Engineering Laboratory for Vacuum Metallurgy Faculty of Metallurgical and Energy EngineeringKunming University of Science and Technology

ISBN: (纸本)9783038353522

The multicrystalline silicon wafers purified by directional solidification route were used to introduce copper *** resistivity and minority carrier lifetime of multicrystalline silicon wafers were investigated by four-point probe resistivity tester andμ-PCD,*** temperature,atmosphere and cooling rate were *** was found that copper contaminants have a greater impact on the electrical properties of multicrystalline *** results showed that copper impurities tend to exist at defect sites at high temperature,and high annealing temperature,argon atmosphere and slow cooling conditions make more impact on the electrical properties of multicrystalline silicon than low annealing temperature,air atmosphere and fast cooling.

关键词： multicrystalline silicon copper contamination minority carrier lifetime resistivity

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