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Variation of contact resonance frequency during domain switching in PFM measurements for ferroelectric materials

Journal of Materiomics 2020年第1期6卷 109-118页

作者： Yue Liu Yao Sun Wanheng Lu Hongli Wang Zhongting Wang Bingxue Yu Tao Li Kaiyang Zeng Department of Mechanical Engineering National University of Singapore9 Engineering Drive 1117576Singapore Center for Spintronics and Quantum System State Key Laboratory for Mechanical Behavior of MaterialsSchool of Materials Science and EngineeringXi’an Jiaotong UniversityShanxi 710049Xi’anChina

Piezoresponse Force Spectroscopy(PFS)is a powerful technique widely used for measuring the nanoscale electromechanical coupling of the ferro-/piezo-electric ***,it is found that certain nonferroelectric materials can also generate the“hysteresis-loop-like”responses from the PFS measurements due to many other factors such as electrostatic *** work therefore studies the signal of the contact resonance frequency during the PFS *** comparing the results from ferroelectric and non-ferroelectric materials,it is found there are distinct differences between these two types of materials in the variation of the contact resonance frequency during the PFS measurements.A momentary and sharp increase of the contact resonance frequency occurs when the domain is switched by applying the DC bias,which can be regarded as a unique characteristic for the ferroelectric *** analyzing the reliability and mechanism of this method,it is proposed that the contact resonance frequency variation at the coercive bias is capable to differentiate the electromechanical responses of the ferroelectric and non-ferroelectric materials during the PFS measurements.

关键词： Ferroelectricity Piezoresponse force spectroscopy contact resonance frequency Dual AC resonance tracking Domain switching Damping harmonic oscillator model

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Quantitative measurement of local elasticity of SiO_x film by atomic force acoustic microscopy

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Chinese Physics B 2010年第8期19卷 449-455页

作者：何存富张改梅吴斌 College of Mechanical Engineering & Applied Electronics Technology Beijing University of Technology

In this paper the elastic properties of SiOx film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy （AFAM） in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiOx films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition （PECVD）, The local contact stiffness of the tip-SiOx film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiOx film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiOx surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample.

关键词： atomic force acoustic microscopy SiOx film contact resonance frequency local elasticity

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