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Synthesis of Aligned Carbon Nanotubes by Thermal chemical vapor deposition

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Journal of Wuhan University of Technology(Materials Science) 2009年第1期24卷 15-19页

作者：李刚周明 Jiangsu Key Laboratory of Center for Photon Manufacturing Science and Technology Jiangsu University School of Automobile and Traffic Engineering Jiangsu University

Single crystal silicon was found to be very beneficial to the growth of aligned carbon nanotubes by chemical vapor deposition with C2H2 as carbon source. A thin film of Ni served as catalyst was deposited on the Si substrate by the K575X Peltier Cooled High Resolution Sputter Coater before growth. The growth properties of carbon nanotubes were studied as a function of the Ni catalyst layer thickness. The diameter, growth rate and areal density of the carbon nanotubes were controlled by the initial thickness of the catalyst layer. Steric hindrance between nanotubes forces them to grow in well-aligned manner at an initial stage of growth. Transmission electron microscope analysis revealed that nanotubes grew by a tip growth mechanism.

关键词： carbon nanombes magnetron sputtering chemical vapor deposition tip-growth

Criteria for the growth of large-area adlayer-free monolayer graphene films by chemical vapor deposition

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Journal of Materiomics 2019年第3期5卷 463-470页

作者： Changqing Shen Xingzhou Yan Fangzhu Qing Xiaobin Niu Richard Stehle Samuel S.Mao Wanli Zhang Xuesong Li School of Electronic Science and Engineering University of Electronic Science and Technology of ChinaChengdu610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu610054China Department of Mechanical Engineering Sichuan University-Pittsburgh InstituteSichuan UniversityChengdu610207China Institute of New Energy Shenzhen518031China Department of Mechanical Engineering University of California at BerkeleyBerkeleyCA94720USA

Homogeneity is important to material applications for good performance of individual devices,for making AB-stacked bilayer graphene in a layer-by-layer stacking order,and from the point of view of industrial *** many properties to be controlled,for the case of graphene,the thickness(or layer number)uniformity is the *** vapor deposition(CVD)of C precursors on Cu substrates is the most popular method to produce large-area graphene *** date,precise control on the number of graphene layers as well as the uniformity over a large area is still very *** this work,with a further understanding of the factors affecting adlayer growth,the synthesis of large-area adlayer-free monolayer graphene(MLG)films was achieved up to tens of squared centimeters in area by just using untreated Cu foil and a normal CVD *** found that keeping equal C precursor concentration on the two sides of the Cu substrate is a criterion in addition to other factors such as the ratio of H:C and the substrate surface morphology for the growth of adlayer-free *** finding is not only of great significance for the industrial production of large-area adlayer-free MLG films but also instructive for the synthesis of homogeneous few-layer graphene.

关键词： Graphene Adlayer-free chemical vapor deposition Monolayer Bilayer

Controllable synthesis of Ni-catalyzed tetragonal tungsten nanowires via chemical vapor deposition

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Progress in Natural Science:Materials International 2012年第5期22卷 514-519页

作者： Chao Wang a,Yuehui He a,Chaoqun Peng b,Shiliang Wang a,c,Xinli Liu a a State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China b School of Material Science and Engineering,Central South University,Changsha 410083,China c School of Physics Science and Technology,Central South University,Changsha 410083,China State Key Laboratory of Powder Metallurgy Central South University Changsha 410083 China School of Material Science and Engineering Central South University Changsha 410083 China School of Physics Science and Technology Central South University Changsha 410083 China

Tetragonal single-crystal tungsten nanowires were successfully synthesized by chemical vapor deposition(CVD) catalyzed by Ni *** influences of the catalysts,temperature and growth time on the formation of the nanowires were *** was found that the tetragonal tungsten nanowires(WNWs) arrays were obtained by deterministic growth from the ordered Ni catalyst particles with one-to-one relation in size and position between the catalysts and *** large-scale tungsten nanowire arrays were synthesized at the low temperature of 950℃.Samples were characterized by X-ray diffraction(XRD),field-emission scanning electron microscopy(FE-SEM),transmission electron microscopy(TEM) and high-resolution transmission electron microscopy(HRTEM).Increasing growth time at 950℃,the tip of the WNWs changed from four(211) planes to four(110) *** controls of the orientation and structure of WNWs arrays were important for adjusting their properties to satisfy different requirements of potential nanodevices.

关键词： Tungsten nanowires Ni catalysts chemical vapor deposition Nanostructures

chemical-vapor-deposition-grown 2D transition metal dichalcogenides:A generalist model for engineering electrocatalytic hydrogen evolution

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Nano Research 2023年第1期16卷 101-116页

作者： Yang Zhao Jiazhao Huang Jianqiang Chen Youwen Liu Tianyou Zhai State Key Laboratory of Materials Processing and Die&Mould Technology and School of Materials Science and EngineeringHuazhong University of Science and Technology(HUST)Wuhan 430074China

Two-dimensional(2D)transition metal dichalcogenides(TMDs)have proved to possess exceptional catalytic performance for hydrogen evolution and are considered to be an appropriate substitute for commercial Pt-based ***,chemical vapor deposition(CVD)is an extremely important technique for acquiring controllable and high-purity TMDs for electrocatalysis and modern electronic ***,researchers have made significant achievements in synthesizing TMDs used for electrocatalytic hydrogen evolution by CVD ranging from dynamic mechanism exploration to performance *** this review,we present the recent progress based on electrocatalytic hydrogen evolution implemented by CVDgrowth TMDs nanosheets and unveil the structural–activity ***,in synthesis,diverse factors covering precursor,substrate,temperature settings,and atmosphere will affect the quality and surface morphology of ***,we present the current research status of the CVD-grown 2D TMDs for engineering electrocatalytic hydrogen evolution,including intrinsic performance exploring,morphology engineering,composition adjusting,phase engineering,and vertically-oriented structure ***,the future prospects and challenges of CVD in 2D TMDs electrocatalysis are provided.

关键词： chemical vapor deposition two-dimensional(2D)transition metal dichalcogenides electrochemistry hydrogen evolution on-chip electrocatalysis

Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

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Chinese Physics B 2014年第9期23卷 1-5页

作者：杨贺申承民田园王高强林少雄张一顾长志李俊杰高鸿钧 Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences

Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions： ideally to 2-3 sccm CH4 for 30 minutes.

关键词： graphene chemical vapor deposition Raman spectra

Synthesis of Diamond-Like Carbon Films Using Hot Filament-Aided Microwave Plasma chemical vapor deposition

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Plasma Science and Technology 2001年第6期3卷 1043-1048页

作者：黄卫东吴丛凤詹如娟中国科学技术大学安徽合肥 230026

Diamond-like carbon (DLC) films have been deposited using pure CH4 generated in a surface wave plasma equipment, where a hot filament is used to make the discharge easily and provides a certain amount of heat feeding to the samples. The deposited films are charac- terized by Raman spectrum, scanning electronic microscopy and infrared absorption spectrum techniques. The electron density increases with the filament current and the Raman signal is stronger and sharper with a current adding to the filament, indicating that the hot filament can improve film quality by increasing the electron density. Meanwhile, films with stronger and sharper Raman peaks around 1332 cm-1 and 1600 cm-1, denser and size-unchanging clusters, and obvious stretching mode of CH3 or CH2 under a direct current (dc) bias of -60 V are shown respectively by Raman spectrum, scanning electronic microscopy photos and infrared absorption spectrum. The content calculated by decomposition of Raman spectrum of the film is 44% under the dc bias of -60 V.

关键词： chemical vapor deposition Microwave Plasma Raman spectrum electronic microscopy absorption spectrum electron density hot filament plasma equipment direct current surface wave mode of dc bias

PARTICLE COATING BY chemical vapor deposition IN A FLUIDIZED BED REACTOR

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China Particuology 2005年第1期3卷 105-112页

作者： Gregor Czok Joachim Werther Department of chemical Engineering I Technical University Hamburg-Harburg Germany

Aluminum coatings were created onto glass beads by chemical vapor deposition in a fluidized bed reactor at different temperatures. Nitrogen was enriched with Triisobutylaluminum (TIBA) vapor and the latter was thermally decomposed inside the fluidized bed to deposit the elemental aluminum. To ensure homogeneous coating on the bed material, the fluidizing conditions necessary to avoid agglomeration were investigated for a broad range of temperatures. The deposition reaction was modeled on the basis of a discrete particle simulation to gain insight into homogeneity and thickness of the coating throughout the bed material. In particular, the take-up of aluminum was traced for selected particles that exhibited a large mass of deposited aluminum.

关键词： chemical vapor deposition fluidized bed reactor particle coating

Progress in coating ultraflne particles using chemical vapor deposition in fluidized bed reactors

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Progress in Natural Science:Materials International 1996年第3期 15-22页

作者：洪若瑜李洪钟 Beijing 100080 China Chinese Academy of Sciences Institute of chemical Mietallurgy Multiphase Reaction Laboratory

Ultrafine particle (UFP) materials with various specialized functions have attracted much attention recently. UFP with sizes ranging between objects and micro-particles (e. g. atom) not only deepen our understanding of nature, but also serve as the basis for the development of new advanced technology. They will be an accent for the next round of scientific and technological development and initiate a new industrial revolution in the near future. But the application of UFP often depends upon the surface modification

关键词： fluidization ultrafine particle (powder) surface modification coating chemical vapor deposition agglomerate (cluster).

Synthesis of Carbon Nanotubes by chemical vapor deposition and their Application for CO2 and CH4 Detection

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Synthesis of Carbon Nanotubes by Chemical Vapor Deposition a...