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Visible-light-driven heterostructured g-C_(3)N_(4)/Bi-TiO_(2) floating photocatalyst with enhanced charge carrier separation for photocatalytic inactivation of Microcystis aeruginosa

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Frontiers of Environmental Science & Engineering 2021年第6期15卷 367-378页

作者： Jingke Song Chenyang Li Xuejiang Wang Songsong Zhi Xin Wang Jianhui Sun School of Environment Key Laboratory for Yellow River and Huai River Water Environment and Pollution Control(Ministry of Education)Henan Key Laboratory for Environmental Pollution ControlHenan Normal UniversityXinxiang 453007China College of Environmental Science and Engineering State Key Laboratory of Pollution Control and Resource ReuseTongji UniversityShanghai 200092China Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials Guangdong Engineering Technology Research Center of Efficient Green Energy and Environment Protection MaterialsSchool of Physics and Telecommunication EngineeringSouth China Normal UniversityGuangzhou 510006China

The increase in occurrence and severity of cyanobacteria blooms is causing increasing concern;moreover,human and animal health is affected by the toxic effects of Microcystin-LR released into the *** this paper,a floating photocatalyst for the photocatalytic inactivation of the harmful algae Microcystis aeruginosa(***)was prepared using a simple sol-gel method,i.e.,coating g-C_(3)N_(4) coupled with Bi-doped TiO_(2) on Al_(2)O_(3)-modified expanded perlite(CBTA for short).The impact of different molar ratios of Bi/Ti on CBTA was *** results indicated that Bi doping in TiO_(2) inhibited photogenerated electron-hole pair *** 6 h of visible light illumination,75.9%of ***(initial concentration=2.7106 cells/L)and 83.7%of Microcystin-LR(initial concentration=100μg/L)could be removed with the addition of 2 g/L CBTA1%(i.e.,Bi/Ti molar ratio=1%).The key reactive oxygen species(ROSs)in the photocatalytic inactivation process are h+and*** induction of the Bi^(4+)/Bi^(3+)species by the incorporation of Bi could narrow the bandgap of TiO_(2),trap electrons,and enhance the stability of CBTA-1%in the solutions with coexisting environmental substances.

关键词： Bi doping Visible light Algal removal charge carrier separation

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Electrical probing of carrier separation in InAs/InP/GaAsSb core-dualshell nanowires

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Nano Research 2020年第4期13卷 1065-1070页

作者： Sedighe Salimian Omer Arif Valentina Zannier Daniele Ercolani Francesca Rossi Zahra Sadre Momtaz Fabio Beltram Sefano Roddaro Francesco Rossella Lucia Sorba NEST Istituto Nanoscienze-CNR and Scuola Normale SuperiorePiazza S.Silvestro 121-56127 PisaItaly IMEM-CNR Institute Parco Area delle Scienze 37/A43124 ParmaItaly Department of Physics"E.Fermi" Universita di PisaLargo Pontecorvo 31-56127 PisaItaly

We investigate the tunnel coupling between the outer p-type GaAsSb shell and the n-type InAs core in catalyst-free InAs/lnP/GaAsSb core-dualshell *** present a device fabrication protocol based on wet-etching processes on selected areas of the nanostructures that enables multiple configurations of measurements in the same nanowire-based device(***-shell,core-core and core-shell).Low-temperature(4.2 K)transport in the shell-shell configuration in nanowires with 5 nm-thick InP barrier reveals a weak negative differential ***,when the InP barrier thickness is increased to 10 nm,this negative differential resistance is fully *** electrical resistance between the InAs core and the GaAsSb shell,measured in core-shell configuration,is significantly higher with respect to the resistance of the InAs core and of the GaAsSb *** field effect,applied via a back-gate,has an opposite impact on the electrical transport in the core and in the shell *** results show that electron and hole free carriers populate the InAs and GaAsSb regions respectively and indicate InAs/InP/GaAsSb core-dualshell nanowires as an ideal system for the investigation of the physics of interacting electrons and holes at the nanoscale.

关键词： core-dualshell nanowires charge carrier separation semiconductor nanowires nanoelectronics

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CsPbI3 nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

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Journal of Materials Science & Technology 2021年第16期75卷 196-204页

作者： Muhammad Imran Saleem Shangyi Yang Attia Batool Muhammad Sulaman Chandrasekar Perumal Veeramalai Yurong Jiang Yi Tang Yanyan Cui Libin Tang Bingsuo Zou Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems Center for Micro-Nanotechnology School of Physics Key Laboratory of Advanced Optoelectronic Quantum Design and Measurement Ministry of Education Beijing Institute of Technology Kunming Institute of Physics Research Center for Materials Science Beijing Institute of Technology Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology School of Optics and Photonics Beijing Institute of Technology

Heterojunction is regarded as a crucial step toward realizing high-performance devices, particularly,forming gradient energy band between heterojunctions benefits self-powered photodetectors. Therefore, in this paper, the synthesis of CsPbInanorods(NRs) and its application as the interfacial layer in high-performance, all-solution-processed self-powered photodetectors are presented. For the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au, a responsivity of 3.6 A/W with a specific detectivity of 9.8 × 10Jones was obtained under 0.1 mW/cm~2 white light illumination at zero bias(*** self-powered mode). Meanwhile, the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI(250 nm)/Au, in which the CsPbINRs layer works as the interfacial layer. As a result, a specific detectivity of 4.5 × 10Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm~2 white light illumination, as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in air. The enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbIinterface, which can suppress the carrier recombination and provide efficient transport passages for charge carriers. Thus, it provides a feasible and efficient method for high-performance photodetectors.

关键词： Perovskite Interfacial layer charge carrier recombination Built-in potential charge carrier separation Self-powered photodetector

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Toward photocatalytic hydrogen generation over BiVO_(4) by controlling particle size

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Chinese Chemical Letters 2021年第8期32卷 2419-2422页

作者： Mengdi Sun Zemin Zhang Qiujin Shi Jianlong Yang Mingzheng Xie Weihua Han Key Laboratory of Western China's Environmental Systems of the Ministry of Education Key Laboratory for Environmental Pollution Prediction and Control of Gansu ProvinceCollege of Earth and Environmental SciencesLanzhou UniversityLanzhou 730000China School of Physical Science and Technology Lanzhou UniversityLanzhou 730000China

Owing to excellent light absorption and high activity fo r oxygen evolution,monoclinic bismuth vanadate(BiVO_(4)) is regarded as an ideal candidate for photocatalytic water ***,its application is limited by the large particle size in micrometer scale,as well as the slightly positive conduction *** this work,we successfully synthesized nano-BiVO_(4) with particle size ranged from 27 nm to 57 nm by wet chemical method based on electrostatic spinning *** bulk BiVO_(4),the nano-sized BiVO_(4) possesses the ability to generate hydrogen by water splitting,and the activity could reach up to1.66 μmol h^(-1) g^(-1) with the assistance of *** enhanced activity is mainly attributed to the improvements resulted from reduced particle size,which includes elevated conduction band,enlarged specific surface area and promoted charge *** work provides a simple method for synthesizing photocatalyst with small particle size and high yield.

关键词： Nano-sized bismuth vanadate Electrospinning process charge carrier separation Elevated conduction band Water splitting

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Introducing sulfur vacancies and in-plane SnS_(2)/SnO_(2) heterojunction in SnS_(2) nanosheets to promote photocatalytic activity

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Chinese Chemical Letters 2020年第10期31卷 2809-2813页

作者： Keyan Hu Chen Ming Yiting Liu Chong Zheng Shaoning Zhang Dong Wang Wei Zhao Fuqiang Huang State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050China School of Mechanical and Electrical Engineering Jingdezhen Ceramic InstituteJingdezhen 333403China State Key Laboratory of Precision Spectroscopy East China Normal UniversityShanghai 200062China Department of Chemistry and Biochemistry Northern Illinois UniversityDeKalbIllinois 60115United States Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China

Due to the relatively sluggish charge carrier separation in metal sulfides,the photocatalytic activity of them is still far lower than ***,sulfur vacancies and in-plane SnS_(2)/SnO_(2) heterojunction were successfully introduced into the SnS_(2) nanosheets through high energy *** defective structures were studied by the electron paramagnetic resonance,Raman spectra,X-ray photoelectron spectroscopy,and high-resolution transmission electron microscope *** sulfur vacancies and in-plane heterojunctions strongly accelerate the separation of photoexcited electron-hole pairs,as confirmed by the photo luminesce nce emission spectra and time-resolved photoluminescence decay *** introduction of sulfur vacancies and in-plane heterojunction in SnS_(2) nanosheets results in roughly six times higher photodegrading rate for methyl orange and four times higher photocatalytic reduction rate of Cr6+than those of pure SnS_(2) nanosheets.

关键词： Sulfur vacancies In-plane heterojunction SnS_(2)Nanosheets Ball-milling charge carrier separation

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CsPbI nanorods as the interfacial layer for high-performance,all-solution-processed self-powered photodetectors

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Journal of Materials Science & Technology 2021年第16期 196-204页

作者： Muhammad Imran Saleem Shangyi Yang Attia Batool Muhammad Sulaman Chandrasekar Perumal Veeramalai Yurong Jiang Yi Tang Yanyan Cui Libin Tang Bingsuo Zou Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems.Center for Micro-Nanotechnology School of PhysicsKey Laboratory of Advanced Optoelectronic Quantum Design and Measurement.Ministry of EducationBeijing Institute of TechnologyBeijing 100081China Kunming Institute of Physics Kunming 650223China Research Center for Materials Science Beijing Institute of TechnologyBeijing 100081China Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology School of Optics and PhotonicsBeijing Institute of TechnologyBeijing 100081China

Heterojunction is regarded as a crucial step toward realizing high-performance devices,particularly,forming gradient energy band between heterojunctions benefits self-powered ***,in this paper,the synthesis of CsPbI3 nanorods(NRs)and its application as the interfacial layer in high-performance,all-solution-processed self-powered photodetectors are *** the bilayer photodetector ITO/ZnO(100 nm)/PbS-TBAI(150 nm)/Au,a responsivity of 3.6 A/W with a specific detectivity of 9.8×10^(12)Jones was obtained under 0.1 mW/cm^(2)white light illumination at zero bias(*** self-powered mode).Meanwhile,the photocurrent was enhanced to an On/Off current ratio of 105 at zero bias with an open circuit voltage of 0.53 V for trilayer photodetector ITO/ZnO(100 nm)/PbSTBAI(150 nm)/CsPbI3(250 nm)/Au,in which the CsPbI3 NRs layer works as the interfacial *** a result,a specific detectivity of 4.5×10^(13)Jones with a responsivity of 11.12 A/W was obtained under0.1 mW/cm^(2) white light illumination,as well as the rising/decaying time of 0.57 s/0.41 s with excellent stability and reproducibility upto four weeks in *** enhanced-performance is ascribed to the mismatch bandgap between PbS-TBAI/CsPbI_(3)interface,which can suppress the carrier recombination and provide efficient transport passages for charge ***,it provides a feasible and efficient method for high-performance photodetectors.

关键词： Perovskite Interfacial layer charge carrier recombination Built-in potential charge carrier separation Self-powered photodetector

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