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bulk etch rate of LR 115 Polymeric Radon Detector

Detection 2021年第1期8卷 1-8页

作者： Dabo S. I. Agba Koudou Djagouri Bogbe D. L. H. Gogon Aka A. Koua Laboratory of Fundamental and Applied Physics University Department of Fundamental and Applied Sciences University Nangui Abrogoua Abidjan C&#244 te d’Ivoire Normal High School Abidjan C&#244 te d’Ivoire Laboratory of Sciences of Matter Environment and Solar Energy—Team of Nuclear Physics and Radiation Protection University De-partment of Sciences of Matter Structures and Technology University Félix Houph&#246 uet—Boigny Abidjan C&#244 te d’Ivoire

In this study, we used strippable LR 115 type 2 which is a Solid State Nuclear Track Detector (SSNTD) widely known for radon gas detection and measurement. The removed thickness of the active layer of samples of this SSNTD, were determined by measuring the average initial thickness (before etching) and residual thickness after 80 to 135 minutes chemical etching in the standard conditions, using an electronic comparator. These results allowed the calculation of the bulk etch rate of this detector in a simple way. The mean value obtained is (3.21 ± 0.21) μm/h. This value is in close agreement with those reported by different authors. It is an important parameter for alpha track counting on the sensitive surface of this polymeric detector after chemical etching because track density depends extremely on its removed layer. This SSNTD was then used for environmental radon gas monitoring in Côte d’Ivoire.

关键词： Strippable LR 115 Type 2 Chemical etching Removed Layer bulk etch rate

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bulk etch rates of CR-39 at high etchant concentrations:diffusionlimited etching

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Nuclear Science and Techniques 2020年第12期31卷 41-49页

作者： E.M.Awad M.A.Rana Mushtaq Abed Al-Jubbori Physics Department Faculty of ScienceMenoufia UniversityShebin El-KoomMenoufia 32511Egypt MERADD Instrumentation Control and Computer Complex(ICCC)PARAS Building18-KM Multan RoadP.O.ChungLahorePakistan Department of Physics College of Education for Pure SciencesUniversity of MosulMosul 41001Iraq

Systematic CR-39 bulk etching experiments were conducted over a wide range of concentrations(2–30 N)of NaOH-based *** analysis and a deep discussion of the results are presented.A comprehensive nuclear track chemical etching data bank was *** regimes of CR-39 bulk etching were *** I spans etchant concentrations from 2 to 12 *** II spans concentrations from 12 to 25 *** call this the dynamic bulk etching *** III is for concentrations greater than 25 *** this regime,the bulk etch rate is saturated with respect to the etchant *** classification is discussed and *** role of ethanol in NaOH-based etchants is explored and discussed.A parameter called the “reduced bulk etch rate” is defined here,which helps in analyzing the dependence of bulk etching on the amount of ethanol in the *** bulk etch rate shows a natural logarithmic dependence on the density of ethanol in the etchant.

关键词： CR-39 detector Ethanol bulk etch rate Reduced bulk etch rate Diffusion-limited etching Concentration-limited etching

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Micro-track structure analysis for 100 MeV Si ions in CR-39 by using atomic force microscopy

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Chinese Physics B 2013年第11期22卷 436-439页

作者：方美华魏志勇张紫霞朱立府宇石苗黎光武郭刚 Nanjing University of Aeronautics and Astronautics China Institute of Atomic Energy

To analyze the micro-track structure of heavy ions in a polymer material, parameters including bulk etch rate, track etch rate, etch rate ratio, and track core size were measured. The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 ℃. bulk etch rate was read out by a profilemeter after several hours of etching. The other parameters were obtained by using an atomic force microscope （AFM） after a short time of etching. We have measured the second etch pits and minute etch pits to obtain the track growth curve and three dimension track structures to track the core size and etch rate measurements. The local dose of the track core was calculated by the δ-ray theory. In our study, we figure out that the bulk etch rate Vb=（1.58±0.022） μm/h, the track etch rate Vt=（2.90±0.529） μ/h, the etch rate ratio V=1.84±0.031, and the track core radii r≈4.65 nm. In the meantime, we find that the micro-track development violates the traditional track-growth model. For this reason, a scenario is carried out to provide an explanation.

关键词： micro-track structure bulk etch rate track etch rate track core size

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