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Analysis of influencing factors on the method for determining boron concentration and dose through dual prompt gamma detection

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Nuclear Science and Techniques 2021年第4期32卷 10-19页

作者： Feng Tian Chang-Ran Geng Xiao-Bin Tang Di-Yun Shu Huang-Feng Ye Silva Bortolussi Chun-Hui Gong Department of Nuclear Science and Technology Nanjing University of Aeronautics and AstronauticsNanjing 210016China Key Laboratory of Nuclear Technology Application and Radiation Protection in Astronautics(Nanjing University of Aeronautics and Astronautics) Ministry of Industry and Information TechnologyNanjing 210016China Unit of Pavia National Institute of Nuclear Physics(INFN)Via A.Bassi 627100 PaviaItaly

A method based on the cross-sectional relationship between^(10)B(n,α)^(7)Li and^(1)H(n,γ)^(2)H was proposed to detect and reconstruct the three-dimensional boron concentration/dose distribution in vivo during boron neutron capture therapy(BNCT).Factors such as the neutron energy,fluence rate,and degree of non-uniform distribution of the boron concentration in a voxel may affect the results of this method.A theoretical analysis of the accuracy of the method using a Monte Carlo simulation shows that the determining error is generally less than 1%under different tumor locations and neutron source *** the voxel size is larger than 0.4 cm,the determining error might be higher for a non-uniformly distributed boron concentration in the voxel because of the changes in the neutron energy and fluence *** conclusion,the proposed method enables an accurate threedimensional boron determination in vivo during BNCT.

关键词： BNCT boron concentration Prompt gamma Capture cross section

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boron isotope geochemistry of Zigetang Co saline lake sediments,Tibetan Plateau

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Acta Geochimica 2017年第3期36卷 437-439页

作者： Xiaodan Wang Congqiang Liu Zhiqi Zhao Shijie Li Gangjian Wei State Key Laboratory of Environmental Geochemistry Institute of Geochemistry Chinese Academy of SciencesGuiyang 550002 Guizhou China University of Chinese Academy of Sciences Beijing 100049China State Key Laboratory of Organic Geochemistry Guangzhou Institute of Geochemistry Chinese Academy of Sciences Guangzhou 510640 China

The origin of boron in boron-rich salt lakes in the Tibetan Plateau is highly *** this study,we carried out a detailed study on boron geochemistry and isotope composition of lake sediments collected in Zigetang Co,central *** had high boron concentrations of 172.3–418.6 lg/g and δ^(11)B values of-8.2%to-3.3%,suggesting a non-marine origin for the saline *** boron isotopic fractionation factor,a,between evaporite and brackish water(a_(evaporite–brackish))decreased systematically with depth,from 0.9942 at the top of the drill core to 0.9893 at the bottom;the linear variation between α_(evaporite–brackish)and depth reflects boron isotopic fractionation associated with progressive *** positive correlation between δ^(11)B versus[B]and δ^(11)B versus depth in the evaporite phase reflects pH and boron speciation in the solution control on the adsorption of boron,and B(OH)_3 species incorporated preferentially into Mg(OH)_2 precipitation at high pH.

关键词： boron isotopes Zigetang Co Equilibrium isotopic fractionation boron concentration

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Study of Electrical Characteristic in Heavily Doped P-Type Si1-xGex/Si Hetero-Structure by Infrared Ellipsometric Spectroscopy

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Journal of Rare Earths 2006年第S2期 386-389页

作者：陈长春刘江峰余本海戴启润 Xinyang 464000 China College of Physics and Electronics Engineering Xinyang Normal University College of Physics and Electronics Engineering Xinyang Normal University

Si1-xGex/Si heterostructures play a primary role in the Si-based fast electronics developments today. In this work, the experimental results of infrared spectroscopic ellipsometry (IRSE) for structural determination of the boron heavily doped SiGe/Si sampled grown by ultra high vacuum chemical vapor deposition (UHVCVD) (the Ge atomic percent, the thickness of SiGe film and boron concentration) was presented. Especially, the principle of boron concentration in p-type SiGe film layer determined by IRSE was elucidated. The experimental results demonstrate that IRSE as a contactless and non-destructive technology can be used in-line tools in production use for measuring the Ge content, the thickness of SiGe layer and boron concentration in p-type dopant SiGe/Si heterostructure, which often be used as the base layer of SiGe hetero-junction bipolar transistor (HBT) devices.

关键词： boron concentration Si1-xGex alloys infrared spectroscopic ellipsometry (IRSE)

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Electrolytic Production of NF3 Using boron-Doped Diamond Anode in Molten NH4F·2HF

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Journal of Chemistry and Chemical Engineering 2012年第6期6卷 499-505页

作者： Akimasa Tasaka Yuki Iida Tomoyuki Shiono Masaharu Uno Yoshinori Nishiki Tsuneto Furuta Morihiro Saito Minoru Inaba Department of Applied Chemistry Graduate School of Engineering Doshisha University Kyoto 610-0321 Japan Department of Molecular Chemistry and Biochemistry Faculty of Science and Engineering Doshisha University Kyoto 610-0321 Japan Permerec Electrode Ltd. Kanagawa 252-0826 Japan

The current efficiency for NF3 formation was independent on the current density in the range of 200 to 1,000 mA·cm^2. The average values of NF3 current efficiencies on the BDD （boron-doped diamond） anode with the boron-concentration of 2,500 ppm were 32.3% at 80℃, 63.3% at 100℃ and 59.7% at 120℃. The best current efficiencies for NF3 formation on the BDD anode with boron-concentrations of 2,500, 5,000 and 7,500 ppm were obtained at 100℃ and those were 63.3%, 73.3% and 56.2%, respectively. Although anode effect occurred on the BDD electrodes covered with a part of the surface of the spiculate structure, which had the boron-concentrations higher than 7,500 ppm, it did not take place on the BDD electrodes covered with the surface of diamond structure, even if the BDD electrode had the boron-concentration of 8,000 ppm.

关键词： BDD (boron-doped diamond) electrode electrochemical synthesis of NF3 boron concentration current efficiency forNF3 formation degradation of BDD anode.

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