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Vapor deposition of aluminium oxide into N-rich mesoporous carbon framework as a reversible sulfur host for lithium-sulfur battery cathode

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Nano Research 2021年第1期14卷 131-138页

作者： Fei Sun Zhibin Qu Hua Wang Xiaoyan Liu Tong Pei Rui Han Jihui Gao Guangbo Zhao Yunfeng Lu School of Energy Science and Engineering Harbin Institute of TechnologyHarbin 150001China Department of Chemistry Shanghai Normal UniversityShanghai 150001China Department of Chemical and Biomolecular Engineering University of CaliforniaLos AngelesCA 90095USA

Restraining the shuttle effects of lithium polysulfides is the key to improve the cycling reversibility and stability of lithium-sulfur(Li-S)batteries for which design of robust sulfur hosts has been regarded as the most effective *** this work,we report a new type of hybrid sulfur host which is composed of Al_(2)O_(3) homogenously decorated in nitrogen-rich mesoporous carbon framework(NMC-Al_(2)O_(3)).The NMC-Al_(2)O_(3) hybrid host features a poly-dispersed spherical morphology and a mesoporous configuration with high surface area and large pore volume that can accommodate a high sulfur content up to 73.5 wt.%.As a result,the fabricated NMC-Al_(2)O_(3)-S cathode exhibits all-round improvements in electrochemical properties in term of capacities(1,212 mAh·g^(-1)at 0.2 C;755 mAh·g^(-1)at 2 C),cycling charge-discharge reversibility(sustainably 100%efficiencies)and stability(1,000 cycles with only 0.023%capacity decay per cycle at 0.5 C).By contrast,the Al_(2)O_(3)-free NMC-S cathode shows both decreased capacities and rapidly descending Coulombic efficiencies during *** functional theory(DFH")calculations further reveal that the implanted Al_(2)O_(3) can greatly enhance the chemical adsorption and catalytic conversion for various lithium polysulfides and thereby effectively prevent the polysulfide shuttling and significantly improve the utilizability,reversibility and stability of sulfur cathode.

关键词： lithium-sulfur battery aluminium oxide sulfur host nitrogen-rich carbon mesoporous structure

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Preparation of aluminium oxide Hollow Fiber Membrane for WaterTreatment

Preparation of Aluminium Oxide Hollow Fiber Membrane for Wat...

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The 12th Asian Pacific Confederation of Chemical Engineering Congress

作者： Tao Wang Yuzhong Zhang~* Hong Li Key Lab of Hollow Fibre Membrane Materials & Membrane Process(Tianjin Polytechnic University),Ministry of Education,Tianjin,300160

With the fast development of membrane technology in water treatment,there is a growing demand for membrane products with high *** inorganic hollow fiber membrane has merits of high resistance to abrasion and thermal degradation and high surface area per unit vol- *** aluminium oxide(AlO)hollow fiber membrane were prepared by the method of

关键词： aluminium oxide ceramic hollow fiber hollow fibers

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Integrated CO_(2)capture and reduction catalysis:Role ofγ-Al_(2)O_(3)support,unique state of potassium and synergy with copper

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Journal of Environmental Sciences 2024年第6期140卷 113-122页

作者： Donato Pinto Stefano Minorello Zhouping Zhou Atsushi Urakawa Catalysis Engineering Department of Chemical EngineeringDelft University of TechnologyDelft2629HZNetherlands

Carbon dioxide capture and reduction(CCR)process emerges as an efficient catalytic strategy for CO_(2)capture and conversion to valuable chemicals.K-promoted Cu/Al_(2)O_(3)catalysts exhibited promising CO_(2)capture efficiency and highly selective conversion to syngas(CO+H_(2)).The dynamic nature of the Cu-K system at reaction conditions complicates the identification of the catalytically active phase and surface *** present work aims at more precise understanding of the roles of the potassium and copper and the contribution of the metal oxide ***γ-Al_(2)O_(3)guarantees high dispersion and destabilisation of the potassium phase,potassium and copper act synergistically to remove CO_(2)from diluted streams and promote fast regeneration of the active phase for CO_(2)capture releasing CO while passing H_(2).A temperature of 350℃is found necessary to activate H_(2)dissociation and generate the active sites for CO_(2)*** effects of synthesis parameters on the CCR activity are also described by combination of ex-situ characterisation of the materials and catalytic testing.

关键词： Carbon dioxide Carbon capture and utilisation CO_(2)capture and reduction Solid CO_(2)sorbents Heterogeneous catalysis Potassium Copper catalysts aluminium oxide

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Mechanical and Abrasive Wear Properties of Anodic oxide Layers Formed on aluminium

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Journal of Materials Science & Technology 2009年第4期25卷 508-512页

作者： W. Bensalah K. Elleuch M. Feki M. Wery H.F. Ayedi Unit'e de Recherche de Chimie Industrielle et Mat'eriaux(URCIM) Departement of Materials EngineeringNational School of Engineering IUT Orsay-Paris XI University

aluminium oxide coatings were formed on aluminium substrates in oxalic acid-sulphuric acid bath. Abrasion tests of the obtained anodic layers were carried out on a pin-on-disc machine in accordance with the ISO/DP 825 specifications. The rickets microhardness, D （HV0.2）, and the abrasion weight loss, Wa （mg） were measured. Influence of oxalic acid concentration （Cox）, bath temperature （T） and anodic current density （J） on D and Wa has been examined, and the sulphuric acid concentration （Csul） was maintained at 100 g.L-1. It was found that high microhardness and abrasive wear resistance of oxide layers were produced under low temperatures and high current densities with the addition of oxalic acid. The morphology and the composition of the anodic oxide layer were examined by scanning electron microscopy （SEM）, atomic force microscopy （AFM）, optical microscopy and glow-discharge optical emission spectroscopy （GDOES）. It was found that the chemistry of the anodizing electrolyte, temperature, and current density are the controlling factors of the mechanical properties of the anodic oxide layer.

关键词： aluminium oxide Vickers microhardness Abrasive wear

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High-temperature dielectric and microwave absorption performances of TiB2/Al2O3 ceramics prepared by spark plasma sintering

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Science China(Technological Sciences) 2021年第6期64卷 1264-1275页

作者： LIU XiongZhang LUO Hui LI YinRui CHEN Fu LIU JieLing YANG WenTao WANG Xian GONG RongZhou School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China School of Information Science and Engineering Wuhan University of Science and TechnologyWuhan 430081China

TiB_(2)/Al2O3 ceramics reinforced with Mg O are prepared by spark plasma sintering(SPS).The dielectric and microwave(MW)absorption properties are *** results indicate that both the commercial TiB_(2)(C-TiB_(2))content and preparing temperature play important roles in the dielectric ***,TiB_(2)/Al2O3 composite shows the best MW absorption property when the C-TiB_(2)content and preparing temperature are 9 wt%and 1400°*** further improve the MW absorption properties,the composite containing 9 wt%synthesized TiB_(2)(S-TiB_(2))has been sintered at 1400°*** high-temperature complex permittivity is greater than that of TiB_(2)/Al2O3 composite with 9 wt%C-TiB_(2)sintered at 1400°C and is directly proportional to the ***,TiB_(2)/Al2O3 composite with 9 wt%S-TiB_(2)possesses a better MW absorption at 25–500°C,its effective absorption bandwidth(RL<-5 dB)can reach 4.2 GHz at 25–500°*** the minimum reflection loss(RLmin)value reaches-43.41 dB at the temperature of 800°C with a thickness of 1.45 mm for TiB_(2)/Al2O3 composite with 9 wt%C-TiB_(2).Consequently,the satisfying absorbing layer(d<1.75 mm),flexural strength,heat stability and considerable high-temperature MW absorption ability grant TiB_(2)/Al2O3 ceramics practical applications as high-temperature microwave absorption materials(MAMs).

关键词： titanium boride aluminium oxide heat stability electric conductivity high-temperature microwave absorption properties

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A study of GaN MOSFETs with atomic-layer-deposited Al_2O_3 as the gate dielectric

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Chinese Physics B 2012年第1期21卷 453-457页

作者： Feng Qian Xing Tao Wang Qiang Feng Qing Li Qian Bi Zhi-Wei Zhang Jin-Cheng Hao Yue School of Microelectronics Xidian UniversityXi'an 710071China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian UniversityXi'an 710071China

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al203 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the A1203 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm^2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition A1203 growth and device fabrication.

关键词： gallium nitride metal-oxide-semiconductor field-effect transistor atomic-layer deposi-tion aluminium oxide

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Electrical conductivity optimization of the Na3AlF6–Al2O3–Sm2O3 molten salts system for Al–Sm intermediate binary alloy production

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International Journal of Minerals,Metallurgy and Materials 2017年第9期24卷 1034-1042页

作者： Chun-fa Liao Yun-fen Jiao Xu Wang Bo-qing Cai Qiang-chao Sun Hao Tang Institute of Metallurgical and Chemical Engineering Jiangxi University of Science and Technology

Metal Sm has been widely used in making Al–Sm magnet alloy materials. Conventional distillation technology to produce Sm has the disadvantages of low productivity, high costs, and pollution generation. The objective of this study was to develop a molten salt electrolyte system to produce Al–Sm alloy directly, with focus on the electrical conductivity and optimal operating conditions to minimize the energy consumption. The continuously varying cell constant(CVCC) technique was used to measure the conductivity for the Na3AlF6–AlF3–LiF–MgF2–Al2O3–Sm2O3electrolysis medium in the temperature range from 905 to 1055°C. The temperature(t) and the addition of Al2O3(W(Al2O3)), Sm2O3(W(Sm2O3)), and a combination of Al2O3and Sm2O3into the basic fluoride system were examined with respect to their effects on the conductivity(κ) and activation energy. The experimental results showed that the molten electrolyte conductivity increases with increasing temperature(t) and decreases with the addition of Al2O3or Sm2O3or both. We concluded that the optimal operation conditions for Al–Sm intermediate alloy production in the Na3AlF6–AlF3–LiF–MgF2–Al2O3–Sm2O3system are W(Al2O3) + W(Sm2O3) = 3wt%, W(Al2O3):W(Sm2O3) = 7:3, and a temperature of 965 to 995°C, which results in satisfactory conductivity, low fluoride evaporation losses, and low energy consumption.

关键词： aluminium oxide samarium oxide molten salt electrical conductivity regression analysis Al–Sm intermediate alloy

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Temperature-insensitive microwave absorption of TiB2-Al_(2)O_(3)/MgAl_(2)O_(4) ceramics based on controllable electrical conductivity

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Science China(Technological Sciences) 2021年第6期64卷 1250-1263页

作者： LIU XiongZhang ZHANG Sealing LUO Hui CHEN Fu LI DongMeng WANG Xian GONG RongZhou School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China College of Mechanical and Electronic Engineering Northwest Agriculture and Forestry UniversityYangling 712100China School of Information Science and Engineering Wuhan University of Science and TechnologyWuhan 430081China

The design of the high-temperature microwave absorbing materials (MAMs) with temperature-insensitive and considerable microwave absorption (MA) capacity is a tremendous *** B2-Al_(2)O_(3)/Mg Al_(2)O_(4) MAMs are prepared by the spark plasma sintering (SPS).Further,the influences of the Al_(2)O_(3) content on the flexural strength,thermal stability,high-temperature electrical conductivity,dielectric and MA properties are *** results show that the Al_(2)O_(3) content is associated with flexural strength,high-temperature thermal stability,electrical conductivity,dielectric and MA ***,the temperatureinsensitive and considerable MA properties with the minimum reflection loss (RLmin) ranging from -19.4 to -14.3 dB and the effective absorption bandwidth (EAB,RL<-5 dB) of 3.19–3.55 GHz are attained at 25°C–700°C in 8.2–12.4 GHz as the Al_(2)O_(3) content increases from 70.6 wt%to 80.6 wt%.This is ascribed to the compensating effect of the positive and negative temperature coefficient materials on the high-temperature electrical conductivity as well as the co-play of the dipolar and interfacial polarization at elevated ***,Ti B2-Al_(2)O_(3)/Mg Al_(2)O_(4) ceramics exhibit the ideal prospect as the high-temperature MAMs.

关键词： titanium boride aluminium oxide magnesium-aluminate spinel high-temperature electrical conductivity temperatureinsensitive microwave absorption properties

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Electrical Properties of Compositional Al₂O₃ Supplemented HfO₂ Thin Films by Atomic Layer Deposition

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Materials Sciences and Applications 2022年第9期13卷 491-505页

作者： Yuxi Wang Yong Zhang Tingqu Wu Weizheng Fang Xufeng Kou Tao Wu Jangyong Kim School of Information Science and Technology ShanghaiTech University Shanghai China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China University of the Chinese Academy of Sciences Beijing China ShanghaiTech Quantum Device Laboratory ShanghaiTech University Shanghai China

With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al2O3 supported HfO2 (AHO) thin films for a series of different Hf ratios with Al2O3 dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO2) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO2/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO2/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm2 at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10-9 A/cm2

关键词： High-k Dielectrics Hafnium oxide aluminium oxide Composites Thin Film Capacitors Atomic Layer Deposition Microfabrication

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