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A novel Si-rich SiN bilayer passivation with thin-barrier algan/gan hemts for high performance millimeter-wave applications

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Chinese Physics B 2022年第11期31卷 482-486页

作者：陈治宏宓珉瀚刘捷龙王鹏飞周雨威张濛马晓华郝跃 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an 710071China Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China

We demonstrate a novel Si-rich SiN bilayer passivation technology for algan/gan high electron mobility transistors(hemts)with thin-barrier to minimize surface leakage current to enhance the breakdown voltage.The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si_(3)N_(4) was deposited by plasma-enhanced chemical vapor deposition(PECVD)after removing 20-nm SiO_(2)pre-deposition layer.Compared to traditional Si_(3)N_(4) passivation for thin-barrier algan/gan hemts,Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54%to 8.40%.However,Si-rich bilayer passivation leads to a severer surface leakage current,so that it has a low breakdown voltage.The 20-nm SiO_(2)pre-deposition layer can protect the surface of hemts in fabrication process and decrease Ga–O bonds,resulting in a lower surface leakage current.In contrast to passivating Si-rich SiN directly,devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V.Radio frequency(RF)small-signal characteristics show that hemts with the novel bilayer SiN passivation leads to f_(T)/f_(max) of 68 GHz/102 GHz.At 30 GHz and V_(DS)=20 V,devices achieve a maximum P_(out) of 5.2 W/mm and a peak power-added efficiency(PAE)of 42.2%.These results indicate that hemts with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.

关键词： algan/gan hemts thin-barrier Si-rich SiN passivation current collapse surface leakage current millimeter-wave

Effect of varying layouts on the gate temperature for multi-finger algan/gan hemts

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Journal of Semiconductors 2012年第9期33卷 60-64页

作者：王建辉王鑫华庞磊陈晓娟金智刘新宇 Key Laboratory of Microwave Devices&Integrated Circuits Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

The impacts of varying layout geometries on the channel temperature of multi-finger AIgan/gan hemts are investigated by three-dimensional （3-D） thermal simulations. Micro-Raman thermography is selected to obtain a detailed and accurate temperature distribution of the sample for the verification of the 3-D thermal models. Thermal boundary resistance （TBR） plays an important role in the temperature distribution and is taken into account in the thermal model in order to improve the accuracy of the simulated results. The influence from the number of fingers, finger width and gate pitch on the gate temperature are systematically analysed using 3-D thermal simulations with validated model parameters. Furthermore, a robust method that could efficiently reduce the thermal crosstalk of multi-finger algan/gan hemts is proposed to optimize the thermal design of the device.

关键词： algan/gan hemts thermal simulation thermal boundary resistance thermal management Raman spectroscopy

Self-heating and traps effects on the drain transient response of algan/gan hemts

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Journal of Semiconductors 2014年第10期35卷 37-40页

作者：张亚民冯士维朱慧龚雪芹邓兵马琳 Institute of Semiconductor Device Reliability Physics College of Electronic Information & Control Engineering Beijing University of Technology

The effects of self-heating and traps on the drain current transient responses of algan/gan hemts are studied by 2D numerical simulation. The variation of the drain current simulated by the drain turn-on pulses has been analyzed. Our results show that temperature is the main factor for the drain current lag. The time that the drain current takes to reach a steady state depends on the thermal time constant, which is 8μs in this case. The dynamics of the trapping of electron and channel electron density under drain turn-on pulse voltage are discussed in detail, which indicates that the accepter traps in the buffer are the major reason for the current collapse when the electric field significantly changes. The channel electron density has been shown to increase as the channel temperature rises.

关键词： algan/gan hemts drain transient response channel temperature rise self-heating traps

Schottky forward current transport mechanisms in algan/gan hemts over a wide temperature range

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Chinese Physics B 2014年第9期23卷 409-413页

作者：武玫郑大勇王媛陈伟伟张凯马晓华张进成郝跃 School of Microelectronics Xidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University The Fifth Electronics Research Institute of Ministry of Industry and Information Technology

The behavior of Schottky contacts in algan/gan high electron mobility transistors （hemts） is investigated by temperature-dependent current-voltage （T-I-V） measurements from 300 K to 473 K. The ideality factor and barrier height determined based on the thermionic emission （TE） theory are found to be strong functions of temperature, while present a great deviation from the theoretical value, which can be expounded by the barrier height inhomogeneities. In order to determine the forward current transport mechanisms, the experimental data are analyzed using numerical fitting method, considering the temperature-dependent series resistance. It is observed that the current flow at room temperature can be attributed to the tunneling mechanism, while thermionic emission current gains a growing proportion with an increase in temperature. Finally, the effective barrier height is derived based on the extracted thermionic emission component, and an evaluation of the density of dislocations is made from the I-V characteristics, giving a value of 1.49 × 10^7 cm^-2.

关键词： algan/gan hemts Schottky contacts forward current transport mechanism temperature dependence

Low-leakage-current algan/gan hemts on Si substrates with partially Mg-doped gan buffer layer by metal organic chemical vapor deposition

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Chinese Physics B 2014年第3期23卷 597-601页

作者：黎明王勇王凯明刘纪美 Department of Electronic and Computer Engineering Hong Kong University of Science and Technology

High-performance low-leakage-current A1gan/gan high electron mobility transistors （hemts） on silicon （111） sub- strates grown by metal organic chemical vapor deposition （MOCVD） with a novel partially Magnesium （Mg）-doped gan buffer scheme have been fabricated successfully. The growth and DC results were compared between Mg-doped gan buffer layer and a unintentionally onμe. A 1μ m gate-length transistor with Mg-doped buffer layer exhibited an OFF-state drain leakage current of 8.3 × 10-8 A/mm, to our best knowledge, which is the lowest value reported for MOCVD-grown A1gan/gan hemts on Si featuring the same dimension and structure. The RF characteristics of 0.25-μ m gate length T-shaped gate hemts were also investigated.

关键词： algan/gan hemts low-leakage current metal organic chemical vapor deposition Mg-dopedbuffer layer

Fluorine-plasma surface treatment for gate forward leakage current reduction in algan/gan hemts

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Journal of Semiconductors 2013年第2期34卷 37-40页

作者：陈万军张竞张波陈敬 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Department of Electronic and Computer Engineering Hong Kong University of Science and Technology

The gate forward leakage current in algan/gan high electron mobility transistors （hemts） is investigated. It is shown that the current which originated from the forward biased Schottky-gate contributed to the gate forward leakage current. Therefore, a fluorine-plasma surface treatment is presented to induce the negative ions into the algan layer which results in a higher metal-semiconductor barrier. Consequently, the gate forward leak- age current shrinks. Experimental results confirm that the gate forward leakage current is decreased by one order magnitude lower than that of HEMT device without plasma treatment. In addition, the DC characteristics of the HEMT device with plasma treatment have been studied.

关键词： fluorine-plasma surface treatment algan/gan hemts leakage current

algan/gan hemts的热电可靠性及退火对氢效应的影响研究

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AlGaN/GaN HEMTs的热电可靠性及退火对氢效应的影响研究

作者：郭陈润桂林理工大学

学位级别：硕士

algan/gan hemts是一种高性能、高速、高功率的半导体器件,广泛应用于电力电子、雷达、通信和卫星通讯等领域。然而在实际应用过程中,algan/gan hemts也面临着热电可靠性问题,严重影响器件性能和可靠性,制约了algan/gan hemts应用。进行... 详细信息

algan/gan hemts是一种高性能、高速、高功率的半导体器件,广泛应用于电力电子、雷达、通信和卫星通讯等领域。然而在实际应用过程中,algan/gan hemts也面临着热电可靠性问题,严重影响器件性能和可靠性,制约了algan/gan hemts应用。进行algan/gan hemts热电可靠性研究可以帮助提高其热电环境下的稳定性和可靠性。另外,氢也是影响algan/gan hemts可靠性因素之一,找出一种降低氢气对其电性能影响的方法,可以提高器件的可靠性和稳定性,推动其在实际应用中的发展。基于此,本论围绕algan/gan hemts的变温特性、阶梯偏置电应力退化和氢效应algan/gan hemts的高温退火等三个方面的可靠性问题进行研究。通过对比不同应力前后algan/gan hemts的直流特性、交流特性,分析器件的退化机理,并采用低频噪声分析技术对退化模型进行验证,具体研究内容如下:1、基于高温可靠性试验、直流特性和交流特性分析方法,研究了algan/gan hemts的变温特性。发现随着温度的升高器件的阈值电压轻微正向偏移、跨导峰值轻微减小、输出漏电流减小、电流崩塌率减小、栅延迟特性没有明显变化。通过分析,认为器件的高温退化是电子迁移率和二维电子气密度减小导致的。还在高温下进行了反向偏置的热电耦合应力实验,发现器件的电学性能较单一高温应力和反偏应力退化更为严重,可能存在高温诱导反偏退化机理,使退化加剧。2、对algan/gan hemts,开展了阶梯偏置应力实验。实验结果表明,在阶梯偏置应力下,hemts器件饱和漏电流降低,阈值电压正向漂移。通过分析,确定了阶梯偏置应力的退化机理虚栅效应。此外,通过分析栅极泄漏电流,发现阶梯偏置应力可以减小器件的栅泄漏电流,优化器件的肖特基特性。3、首次对氢效应algan/gan hemts进行高温退火研究,发现高温退火减小了氢气对器件的电性能的影响。利用器件低频噪声特性与缺陷的关系模型提取高温退火前后氢效应algan/gan hemts的缺陷密度,分别为9.27×10 e V·cm和1.43×10e V·cm,揭示了高温诱导陷阱脱氢机理。通过algan/gan hemts热电可靠性及退火对氢处理影响研究,揭示了器件在高温、高场和氢气应力下的退化机理。提出了高温退火可以减小氢气对algan/gan hemts的影响,阶梯偏置应力可以优化器件的肖特基特性,降低器件的栅极泄漏电流,对algan/gan hemts器件的工程应用和性能优化提供参考。

关键词： algan/gan hemts 可靠性高温高场应力氢效应

Effect of the post-gate annealing on the gate reliability of algan/gan hemts

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Journal of Semiconductors 2021年第9期42卷 66-71页

作者： Changxi Chen Quan Wang Wei Li Qian Wang Chun Feng Lijuan Jiang Hongling Xiao Xiaoliang Wang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering and School of Microelectronics University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory of Crystal Materials Shandong UniversityJinan 250100China

In this paper,we investigated the effect of post-gate annealing(PGA)on reverse gate leakage and the reverse bias reliability of Al_(0.23)Ga_(0.77)N/gan high electron mobility transistors(hemts).We found that the Poole-Frenkel(PF)emission is dominant in the reverse gate leakage current at the low reverse bias region(V_(th)hemts.The emission barrier height of HEMT is increased from 0.139 to 0.256 eV after the PGA process,which results in a reduction of the reverse leakage current by more than one order.Besides,the reverse step stress was conducted to study the gate reliability of both hemts.After the stress,the unannealed HEMT shows a higher reverse leakage current due to the permanent damage of the Schottky gate.In contrast,the annealed HEMT shows a little change in reverse leakage current.This indicates that the PGA can reduce the reverse gate leakage and improve the gate reliability.

关键词： algan/gan hemts gate leakage PF emission post-gate annealing(PGA)

11.2 W/mm power density algan/gan high electron-mobility transistors on a gan substrate

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Journal of Semiconductors 2024年第1期45卷 38-41页

作者： Yansheng Hu Yuangang Wang Wei Wang Yuanjie Lv Hongyu Guo Zhirong Zhang Hao Yu Xubo Song Xingye zhou Tingting Han Shaobo Dun Hongyu Liu Aimin Bu Zhihong Feng National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research InstituteShijiazhuang 050051China

In this letter,high power density algan/gan high electron-mobility transistors(hemts)on a freestanding gan substrate are reported.An asymmetricΓ-shaped 500-nm gate with a field plate of 650 nm is introduced to improve microwave power performance.The breakdown voltage(BV)is increased to more than 200 V for the fabricated device with gate-to-source and gate-to-drain distances of 1.08 and 2.92μm.A record continuous-wave power density of 11.2 W/mm@10 GHz is realized with a drain bias of 70 V.The maximum oscillation frequency(f_(max))and unity current gain cut-off frequency(f_(t))of the algan/gan hemts exceed 30 and 20 GHz,respectively.The results demonstrate the potential of algan/gan hemts on freestanding gan substrates for microwave power applications.

关键词： freestanding gan substrates algan/gan hemts continuous-wave power density breakdown voltage Γ-shaped gate