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High energy storage performance in agnbo_(3) relaxor ferroelectric films induced by nanopillar structure

Journal of Materials Science & Technology 2023年第24期155卷 160-166页

作者： Xiang Li Jing Wang Xingyuan San Ning Wang Lei Zhao Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province College Physics Science and Technology Hebei University Baoding 071002 China State Key Laboratory of Mechanics and Control of Mechanical Structures College of Aerospace Engineering Nanjing University of Aeronautics and Astronautics Nanjing 210016 China Huangpu Hydrogen Energy Innovation Center School of Chemistry and Chemical Engineering Guangzhou University Guangzhou 510006 China

Inspired by the increasing demand for energy-storage capacitors in electrical and electronic systems, dielectrics with high energy-storage performance have attracted more and more attention. agnbo_(3) -based lead-free ceramics serve as one of the most promising environmental-friendly candidates. However, their energy storage optimization is seriously limited by the low breakdown strength. Fortunately, thin film as a form of agnbo3 materials can effectively improve the breakdown strength. In this work, agnbo_(3)film with ∼550 nm in thickness was deposited on SrRuO_(3 )/(001)SrTiO_(3) using pulsed laser deposition. The agnbo_(3) film reveals typical relaxor ferroelectric hysteresis loops due to the new nanopillar structure, which contributes to high breakdown strength of up to 1200 kV cm^(-1) . Benefiting from the high breakdown strength, a recoverable energy storage density of 10.3 J cm^(-3) and an energy efficiency of 72.2% are obtained in the agnbo_(3) film, which demonstrates the promising prospect of agnbo_(3) film for energy storage applications.

关键词： agnbo3 film Relaxor ferroelectrics Energy storage performance Nanopillar structure

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