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Journal of Energy Chemistry 2025年第1期100卷 59-65页

作者： Mengyu Xu Shaocong Yan Ting Liang Jia Jia Shengjie Yuan Dongxing Kou Zhengji Zhou Wenhui Zhou Yafang Qi Yuena Meng Litao Han Sixin Wu Key Laboratory for Special Functional Materials of MOE National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology School of Nanoscience and Materials Engineering Henan University

Solution-processed Cu（In,Ga）Se2（CIGS） solar cells suffer from serious carrier recombination and power conversion efficiency（PCE） loss because of the poor film properties and easy formation of ***, we propose ag&Se co-selenization strategy to enhance the crystallization and passivate harmful defects of the CIGS films. The formation of ag-Se phase during the selenization process enables the formation of large grains and suppresses the deep level defects. It is found that ag doping can enlarge the depletion region width, lower the Urbach energy and prolong the carrier lifetime. As a result, a champion solution-processed CIGS solar cell presents a high efficiency of 16.48% with the highly improved opencircuit voltage（VOC） of 662 m V and fill factor（FF） of 75.8%. This work provides an efficient strategy to prepare high quality solution-processed CIGS films for high-performance CIGS solar cells.

关键词： CIGS solar cells Solution-processed method ag doping Crystal growth Defects engineering

Effects of silver-doping on properties of Cu(In,Ga)Se_(2) films prepared by Cu In Ga precursors

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Journal of Energy Chemistry 2022年第3期31卷 218-225,I0007页

作者： Chen Wang Daming Zhuang Ming Zhao Yuxian Li Liangzheng Dong Hanpeng Wang Jinquan Wei Qianming Gong School of Materials Science and Engineering Tsinghua UniversityBeijing 100084China Key Lab.for Advanced Materials Processing Technology of Ministry of Education Tsinghua UniversityBeijing 100084China State Key Lab.of New Ceramics and Fine Processing Tsinghua UniversityBeijing 100084China

The agCuInGa alloy precursors with different ag concentrations are fabricated by sputtering an ag target and a CuInGa *** precursors are selenized in the H_(2)Se-containing atmosphere to prepare(ag,Cu)(In,Ga)Se_(2)(ACIGS)*** beneficial effects of ag doping are demonstrated and their mechanism is *** is found that ag doping significantly improves the films *** is believed to be due to the lower melting point of chalcopyrite phase obtained by the ag *** leads to a higher migration ability of the atoms that in turn promotes grain boundary migration and improves the film *** Ga enrichment at the interface between the absorber and the back electrode is also alleviated during the selenization *** is found that ag doping within a specific range can passivate the band tail and improve the quality of the ***,carrier recombination is reduced and carrier transport is *** negative effects of excessive ag are also demonstrated and their origin is *** the atomic size of ag is different from that of Cu,for the ag/(ag+Cu)ratio(AAC)≥0.030,lattice distortion is aggravated,and significant micro-strain *** atomic radius of ag is close to those of In and Ga,so that the continued increase in AAC will give rise to the ag;or ag;*** the structural and compositional defects degrade the quality of the absorbers and the device *** excellent absorber can be obtained at AAC of 0.015.

关键词： CIGS solar cell ag doping Selenization Sputtering Cu-ag-In-Ga precursor Defects

ag-doped ZnO nanorods synthesized by two-step method

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Chinese Physics B 2012年第11期21卷 373-377页

作者：陈先梅冀勇郜小勇赵显伟 Key Laboratory of Material Physics of Ministry of Education School of Physics and EngineeringZhengzhou University

A two-step method is adopted to synthesize ag-doped ZnO nanorods. A ZnO seed layer is first prepared on a glass substrate by thermal decomposition of zinc acetate. ag-doped ZnO nanorods are then assembled on the ZnO seed layer using the hydrothermal method. The influences of the molar percentage of ag ions to Zn ions （Rag/zn） on the structural and optical properties of the ZnO nanorods obtained are carefully studied using X-ray diffractometry, scanning electron microscopy and spectrophotometry. Results indicate that ag ions enter into the crystal lattice through the substitution of Zn ions. The （002） c-axis-preferred orientation of the ZnO nanorods decreases as Rag/Zn increases. At Rag/Zn 〉 1.0%, ZnO nanorods lose their c-axis-preferred orientation and generate ag precipitates from the ZnO crystal lattice. The average transmissivity in the visible region first increases and then decreases as Rag/Zn increases. The absorption edge is first blue shifted and then red shifted. The influence of ag doping on the average head face, and axial dimensions of the ZnO nanorods may be optimized to improve the average transmissivity at Rag/Zn 〈 1.0%.

关键词： ZnO nanorods ag doping thermal decomposition of zinc acetate hydrothermal method

Single-electron charging and ultrafast dynamics of bimetallic Au_(144−x)agx(PET)_(60) nanoclusters

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Nano Research 2022年第9期15卷 8573-8578页

作者： Xiangsha Du Hedi Ma Xinwen Zhang Meng Zhou Zhongyu Liu He Wang Gangli Wang Rongchao Jin Department of Chemistry Carnegie Mellon UniversityPittsburghPennsylvania 15213USA Department of Chemistry Georgia State UniversityAtlantaGeorgia 30302USA Department of Physics University of MiamiCoral GablesFlorida 33146USA Department of Chemical Physics University of Science and Technology of ChinaHefei 230026China

Alloying is an important strategy in tailoring the functionality of *** metal nanoclusters(NCs),the introduction of a heterometal leads to alloy nanoclusters that often outperform the homometal ones in terms of the physical and chemical *** this work,a series of four M_(144)(PET)60 alloy NCs(where,M=Au/ag,PET=–SCH_(2)CH_(2)Ph)are synthesized and *** silver doping into the homogold template(Au_(144))leads to more prominent optical absorption features in the steady-state spectrum in the visible *** transient absorption spectroscopy reveals the effect of ag doping on the electronic relaxation dynamics compared to Au_(144)and the pump fluence independent *** results reflect a narrowing of HOMO–LUMO gap(E_(g))induced by ag doping.A temperature dependence of the single-electron charging is also observed for the series of alloy NCs,in which the E_(g)values of the alloy NCs enlarge as the temperature decreases,which is characteristic of semiconducting behavior.

关键词： 144-atom alloy nanoclusters ag doping single-electron charging electron dynamics energy gap

Decoupling of thermoelectric transport performance of ag doped and Se alloyed tellurium induced by carrier mobility compensation

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Journal of Materials Science & Technology 2022年第6期101卷 71-79页

作者： Yue Wu Xiaofan Zhang Boyi Wang Jingxuan Liang Zipei Zhang Jiawei Yang Ximeng Dong Shuqi Zheng Huai-zhou Zhao State Key Laboratory of Heavy Oil Processing College of New Energy and MaterialsChina University of PetroleumBeijing 102249China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China

Alloying with Se is proved to be feasible to suppress the lattice thermal conductivity(κL)of tellurium by introducing multidimensional lattice ***,extra ionization impurity centers induced by Se alloying are harmful to the electric transport properties of the *** this paper,we propose that the incorporation of ag could successfully compensate the lost carrier mobility(μH)due to Se alloying through the regulation of microstructure,resulting in the higher power factor(PF)than that of samples without *** composition optimization,theκLdecreased from 1.29 W m^(-1)K^(-1) of Te_(0.99)Sb_(0.01) to 1.05 W m^(-1)K^(-1) of Te_(0.94)ag_(0.02)Se_(0.03)Sb_(0.01) at 350 K,while the PF remained unchanged or even slightly *** from the synergistic effect of carrier mobility compensation and phonon scattering,a maximum z T of 0.91 at 573 K and an average z T of 0.57(between 298 and 573 K)are achieved in Te_(0.94)ag_(0.02)Se_(0.03)Sb_(0.01).This work presents a new strategy for decoupling the thermal and electric parameters of Te-based thermoelectric materials.

关键词： Te ag doping Microstructure regulation Mobility compensation

Temperature stability of magnetoresistance (MR) and MR enhancement in La_(1-x)(Sr_(1-y)ag_y)_x MnO_3 system

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Rare Metals 2013年第1期32卷 81-86页

作者： Yong-Gang Tang Gui-Ying Wang Guo-Qing Yan Qi-Xiang Song Ming-Yu Zhang Zhen-Sheng Peng Cultivating Base of Anhui Key Laboratory of Spintronics and Nano-Materials Research School of Mechanical and Electronic Engineering Suzhou University

Polycrystalline samples of Lal-x（Srl-yagy）x MnO3 （y = 0.0, 0.2, 0.4, 0.6, 1.0） were prepared by the solid-state reaction method. The temperature stability of magnetoresistance and magnetoresistance enhancement in Lal_x（Srl_yagy）~MnO3 system with both univalent and bivalent elements doped at A site and with unchanged value of Mn~＋/Mn4＋ ratio were explored through the measurements of X-ray diffraction patterns, magnetiza- tion-temperature （M-T） curves, resistivity-temperature （p-T） curves and magnetoresistance-temperature （MR-T） curves. The results are as follows： there are two peaks in the p-T curves of the samples with ag doping, one is caused by resistance change during the paramagnetism- ferromagnetism transition, and the other is from boundary- dependent scattering of conduction electrons on the boundaries of grains. The peak value of MR increases with increasing ag doping content, and it increases from 8.2 % for y ---- 0.2 to 29.6 % for y ---- 1.0 under the magnetic field of B = 0.8 T; MR remains a constant of 12 % in the temperature range of 218-168 K for the sample with y = 1.0, and the temperature stability of MR is in favor of the practical application of MR.

关键词： ag doping Magnetoresistance enhancement Temperature stability Perovskite manganite

Influence of ag substitution on thermoelectric properties of the quaternary diamond-like compound Zn_(2)Cu_(3)In_(3)Te_(8)

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Journal of Materiomics 2021年第2期7卷 236-243页

作者： Qidong Zhang Lili Xi Jiye Zhang Chenyang Wang Li You Shanshan Pan Kai Guo Zhili Li Jun Luo School of Materials Science and Engineering Shanghai University99 Shangda RoadShanghai200444China Materials Genome Institute Shanghai University99 Shangda RoadShanghai200444China

The quaternary diamond-like compounds,A_(2)Cu_(3)In_(3)Te_(8)(A=Cd,Zn,Mn,Mg),are a new class of thermoelectric materials recently proposed by complex structure *** them,the Zn_(2)Cu_(3)In_(3)Te_(8) compound possesses reasonable electrical transport properties but relatively high lattice thermal ***,the effects of ag substitution on the phase stability and thermoelectric properties of Zn_(2)Cu_(3)In_(3)Te_(8) compound are *** is revealed that only the In sites show an appreciable tolerance for ag *** substitution at the In sites introduces extra holes and thus results in improved electrical transport ***,the introducing of ag lowers the sound velocities and enhances the phonon scattering of the Zn_(2)Cu_(3)In_(3)Te_(8) compound,which leads to a substantially reduction in lattice thermal ***,in virtue of the optimization in both electrical and thermal transport properties,the maximal zT value of Zn_(2)Cu_(3)In_(2.8)ag_(0.2)Te_(8) sample reaches 0.62 at 823 K,which is 43%higher than the pristine sample.

关键词： Thermoelectric materials Quaternary diamond-like compounds Zn_(2)Cu_(3)In_(3)Te_(8) ag doping

Incorporation of ag into Cu(In,Ga)Se_(2) films in low-temperature process

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Chinese Optics Letters 2021年第11期19卷 149-154页

作者： Zhaojing Hu Yunxiang Zhang Shuping Lin Shiqing Cheng Zhichao He Chaojie Wang Zhiqiang Zhou Fangfang Liu Yun Sun Wei Liu Institute of Photoelectronic Thin Film Devices and Technology of Nankai University Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinEngineering Research Center of Thin Film Photoelectronic TechnologyMinistry of EducationTianjin 300350China

Chalcopyrite Cu(In,Ga)Se_(2)(CIGS) thin films deposited in a low-temperature process(450℃) usually produce fine grains and poor crystallinity. Herein, different ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the ag precursor and ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with ag doping. This work aims to provide a feasible ag-doping process for the high-quality CIGS films in a low-temperature process.

关键词： Cu(In,Ga)Se_(2)thin film low-temperature deposition process ag doping crystallinity Urbach energy

Synergistically electronic tuning of metalloid CdSe nanorods for enhanced electrochemical CO_(2) reduction

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Science China Materials 2021年第12期64卷 2997-3006页

作者： Tao Chen Tianyang Liu Xinyi Shen Wei Zhang Tao Ding Lan Wang Xiaokang Liu Linlin Cao Wenkun Zhu Yafei Li Tao Yao National Synchrotron Radiation Laboratory University of Science and Technology of ChinaHefei 230029China State Key Laboratory of Environmentally Friendly Energy Materials School of National Defense Science and TechnologySouthwest University of Science and TechnologyMianyang 621010China Jiangsu Collaborative Innovation Centre of Biomedical Functional Materials Jiangsu Key Laboratory of New Power BatteriesSchool of Chemistry and Materials ScienceNanjing Normal UniversityNanjing 210023China

Engineering the electronic properties of catalysts to target intermediate adsorption energy as well as harvest high selectivity represents a promising strategy to design advanced electrocatalysts for efficient CO_(2) ***,a synergistical tuning on the electronic structure of the Cd Se nanorods is proposed for boosting electrochemical reduction of CO_(2) .The synergy of ag doping coupled with Se vacancies tuned the electronic structure of the CdSe nanorods,which shows the metalloid characterization and thereby the accelerated electron transfer of CO_(2) *** synchrotron radiation Fourier transform infrared spectroscopy and theoretical simulation revealed that the ag doping and Se vacancies accelerated the CO_(2) activation process and lowered the energy barrier for the conversion from CO_(2) to;COOH;as a result,the performance of CO_(2) electroreduction was *** as-obtained metalloid ag-doped CdSe nanorods exhibited a 2.7-fold increment in current density and 1.9-fold Faradaic efficiency of CO compared with the pristine CdSe nanorod.

关键词： cadmium selenium ag doping Se vacancies CO_(2)electroreduction

N-Type Surface Design for p-Type CZTSSe Thin Film to Attain High Efficiency

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N-Type Surface Design for p-Type CZTSSe Thin Film to Attain ...